This product complies with the RoHS Directive (EU 2002/95/EC).
Power Transistors
2SB1418, 2SB1418A
Silicon PNP epitaxial planar type darlington
Unit: mm
4.2±0.2
Parameter
Symbol
2SB1418
Collector-base voltage
(Emitter open)
VCEO
Emitter-base voltage (Collector open)
VEBO
1.2±0.1
1.48±0.2
Unit
IC
Peak collector current
ICP
PC
Ta = 25°C
−60
V
2.5±0.2
−60
V
0.65±0.1
1.05±0.1
−5
V
−2
A
−4
A
15
W
Tj
Storage temperature
Tstg
0.55±0.1
0.55±0.1
2.5±0.2
1 2 3
1: Base
2: Collector
3: Emitter
MT-4-A1 Package
Internal Connection
2.0
Junction temperature
2.25±0.2
0.35±0.1
−80
Collector current
C 1.0
0.65±0.1
−80
2SB1418A
Collector power dissipation
Rating
VCBO
Collector-emitter voltage 2SB1418
(Base open)
2SB1418A
5.0±0.1
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■ Absolute Maximum Ratings TC = 25°C
18.0±0.5
Solder Dip
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• High forward current transfer ratio hFE
• High-speed switching
• Allowing automatic insertion with radial taping
1.0±0.2
90˚
13.0±0.2
■ Features
10.0±0.2
2.5±0.1
For power amplification
Complementary to 2SD2138 and 2SD2138A
C
B
150
°C
−55 to +150
°C
E
■ Electrical Characteristics TC = 25°C ± 3°C
Base-emitter voltage
2SB1418A
2SB1418
2SB1418A
an
Collector-base cutoff
current (Emitter open)
2SB1418
VCEO
ce
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isc
on
tin
Collector-emitter voltage
(Base open)
Symbol
ue
Parameter
2SB1418A
Ma
int
en
Collector-emitter cutoff
current (Base open)
2SB1418
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Conditions
IC = −30 mA, IB = 0
Min
Typ
Max
−60
Unit
V
−80
VBE
VCE = −4 V, IC = −2 A
−2.8
V
ICBO
VCB = −60 V, IE = 0
−100
µA
VCB = −80 V, IE = 0
−100
ICEO
VCE = −30 V, IB = 0
−100
VCE = −40 V, IB = 0
−100
IEBO
VEB = −5 V, IC = 0
−100
hFE1
VCE = −4 V, IC = −1 A
1 000
hFE2 *
VCE = −4 V, IC = −2 A
1 000
VCE(sat)
IC = −2 A, IB = −8 mA
µA
µA
10 000
−2.5
V
fT
VCE = −10 V, IC = − 0.5 A, f = 1 MHz
20
MHz
Turn-on time
ton
IC = −2 A, IB1 = − 8 mA, IB2 = 8 mA
0.2
µs
Turn-off time
toff
VCC = −50 V
2
µs
Transition frequency
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
R
hFE2
1 000 to 2 500
Publication date: March 2003
Q
P
2 000 to 5 000 4 000 to 10 000
SJD00073BED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SB1418, 2SB1418A
PC Ta
IC VCE
−5
Collector current IC (A)
15
(1)
10
Collector-emitter saturation voltage VCE(sat) (V)
TC=25˚C
1.6mA
1.8mA
1.4mA
1.2mA
IB=2.0mA
1.0mA
0.8mA
−4
−3
0.6mA
IC/IB=250
25˚C
−10
TC=100˚C
–25˚C
−1
M
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Collector power dissipation PC (W)
(1)TC=Ta
(2)Without heat sink
(PC=2.0W)
VCE(sat) IC
−100
−6
20
5
0.4mA
−2
− 0.1
−1
0.2mA
40
80
120
0
160
Ambient temperature Ta (°C)
Forward current transfer ratio hFE
25˚C
–25˚C
−1
0
−2
−3
−4
an
Thermal resistance Rth (°C/W)
en
int
Ma
Collector current IC (A)
t=1ms
IC
−1
t=10ms
DC
−10
2SB1418A
− 0.01
−1
2SB1418
− 0.1
−100
−1 000
VCE=–4V
25˚C
TC=100˚C
102
− 0.1
−1
−100
Cob VCB
−10
IE=0
f=1MHz
TC=25˚C
100
10
1
−1
−10
−100
Collector-base voltage VCB (V)
Collector current IC (A)
Rth t
Note: Rth was measured at Ta=25˚C and under natural convection.
(1)Without heat sink
(2)With a 50×50×2mm Al heat sink
103
102
(1)
(2)
10
1
10−1
10−4
10−3
10−2
10−1
1
Time t (s)
Collector-emitter voltage VCE (V)
2
−10
104
Non repetitive pulse
TC=25˚C
ICP
−1
Collector current IC (A)
103
10
− 0.01
Safe operation area
−10
− 0.01
− 0.1
−12
–25˚C
ce
/D
isc
on
tin
Base-emitter voltage VBE (V)
−100
−10
1 000
104
ue
Collector current IC (A)
TC=100˚C
−3
0
−8
hFE IC
−5
−1
−6
105
VCE=–4V
−2
−4
Collector-emitter voltage VCE (V)
IC VBE
−6
−4
−2
0
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
0
di
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(2)
0
SJD00073BED
10
102
103
104
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
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(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
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(4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
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(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
