2SB14350RA

2SB14350RA

  • 厂商:

    NAIS(松下)

  • 封装:

    SIP3

  • 描述:

    2SB14350RA

  • 数据手册
  • 价格&库存
2SB14350RA 数据手册
This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SB1435 Silicon PNP epitaxial planar type For low-frequency output amplification Unit: mm 10.8±0.2 • Low collector-emitter saturation voltage VCE(sat) • Large collector current IC • Allowing automatic insertion with radial taping 3.8±0.2 ■ Features 0.85±0.1 1.0±0.1 0.8 C 0.8 C ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −50 V Collector-emitter voltage (Base open) VCEO −50 V Emitter-base voltage (Collector open) VEBO −5 V Collector current IC −2 A Peak collector current ICP −3 A Collector power dissipation PC 1.5 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 0.7±0.1 0.7±0.1 1.15±0.2 1.15±0.2 0.4±0.1 0.5±0.1 0.8 C 1 2 2.5±0.2 3 2.05±0.2 16.0±1.0 d p lan inc ea se ed lud p lan m m es ht visi tp t f ed ain ain foll :// ol d d te te ow ww lo is is na n i w. win con con nce anc ng f se g U tin tin t e ou m R ue ue yp typ r P ico L d d e e ro n. ab typ ty du pa ou e pe ct d na t l life so ate cy nic st cle .co inf sta .jp orm ge /e a n/ tio . n. 2.5±0.1 0.65±0.1 90˚ 4.5±0.2 M Di ain sc te on na tin nc ue e/ d 7.5±0.2 2.5±0.2 1: Emitter 2: Collector 3: Base MT-3-A1 Package Parameter Symbol Collector-base voltage (Emiter open) ue ■ Electrical Characteristics Ta = 25°C ± 3°C Unit −50 V IC = −1 mA, IB = 0 −50 V −5 IE = −10 µA, IC = 0 ICBO VCB = −20 V, IE = 0 Forward current transfer ratio hFE1 * on Max IC = −10 µA, IE = 0 VEBO Di sc Typ VCBO Collector-base cutoff current (Emitter open) Emiter-base voltage (Collector open) Min VCEO tin Collector-emitter voltage (Base open) Conditions V − 0.1 µA 340  120 VCE = −2 V, IC = −1 A 60 Collector-emitter saturation voltage VCE(sat) IC = −1 A, IB = −50 mA − 0.2 − 0.3 V Base-emitter saturation voltage VBE(sat) IC = −1 A, IB = −50 mA − 0.85 −1.20 V M ain te na nc e/ VCE = −2 V, IC = −200 mA hFE2 fT Cob VCB = −10 V, IE = 50 mA, f = 200 MHz 80 VCB = −10 V, IE = 0, f = 1 MHz 45 MHz 60 pF Pl Transition frequency Collector output capacitance (Common base, input open circuited) Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank R S hFE1 120 to 240 170 to 340 Publication date: March 2003 SJD00074BED 1 This product complies with the RoHS Directive (EU 2002/95/EC). 2SB1435 PC  Ta IC  VCE Collector-emitter saturation voltage VCE(sat) (V) Ta=25˚C Without heat sink Collector power dissipation PC (W) VCE(sat)  IC 1.8 2.0 IB=–8mA 1.5 Collector current IC (A) 1.6 –6mA –5mA IC/IB=20 1 M Di ain sc te on na tin nc ue e/ d 1.2 –7mA 1.2 10 0.8 0.4 –2mA 0 40 80 120 160 Ta=–25˚C 0.01 Forward current transfer ratio hFE Ta=25˚C 0.1 2 4 6 8 0.001 10 10 1 100 1 000 25˚C –25˚C 240 160 80 10 1 fT  I E VCB=–10V f=200MHz TC=25˚C 100 200 160 120 80 40 0 1 000 1 Collector current IC (mA) 10 100 Emitter current IE (mA) on tin ue Collector current IC (mA) Ta=75˚C 320 1 000 Collector current IC (mA) 240 400 0 100 Ta=25˚C VCE=–5V Ta=–25˚C 10 Ta=75˚C hFE  IC 10 1 0 480 IC/IB=20 Ta=75˚C 0.1 Collector-emitter voltage VCE (V) VBE(sat)  IC 1 –1mA Transition frequency fT (MHz) 0 100 Base-emitter saturation voltage VBE(sat) (V) –3mA 0.6 0.3 Ambient temperature Ta (°C) 0.01 –4mA d p lan inc ea se ed lud p lan m m es ht visi tp t f ed ain ain foll :// ol d d te te ow ww lo is is na n i w. win con con nce anc ng f se g U tin tin t e ou m R ue ue yp typ r P ico L d d e e ro n. ab typ ty du pa ou e pe ct d na t l life so ate cy nic st cle .co inf sta .jp orm ge /e a n/ tio . n. 0 0.9 Di sc te na 100 80 Rth  t 104 Thermal resistance Rth (°C/W) nc e/ f=1MHz IE=0 TC=25˚C M ain 60 103 102 40 10 1 20 0 1 10 100 10−1 10−4 10−3 10−2 10−1 1 Time t (s) Collector-base voltage VCB (V) 2 Without heat sink Pl Collector output capacitance C (pF) (Common base, input open circuited) ob Cob  VCB 120 SJD00074BED 10 102 103 104 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. pla d in ea ne clu se pla m d de v ht isi ne ai ma s fo tp t f :// ol d d d nte inte llow ww lo is is na n i w. win con con nce anc ng f se g U tin tin t e ou m R ue ue yp typ r P ico L d d e e ro n. ab typ ty du pa ou e pe ct d na t l life so ate cy nic st cle .co inf sta .jp orm ge /e a n/ tio . n. M Di ain sc te on na tin nc ue e/ d (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: – Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. – Any applications other than the standard applications intended. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. Pl M ain te na nc e /D isc on tin ue (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
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