This product complies with the RoHS Directive (EU 2002/95/EC).
Power Transistors
2SB1435
Silicon PNP epitaxial planar type
For low-frequency output amplification
Unit: mm
10.8±0.2
• Low collector-emitter saturation voltage VCE(sat)
• Large collector current IC
• Allowing automatic insertion with radial taping
3.8±0.2
■ Features
0.85±0.1
1.0±0.1 0.8 C
0.8 C
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
−50
V
Collector-emitter voltage (Base open)
VCEO
−50
V
Emitter-base voltage (Collector open)
VEBO
−5
V
Collector current
IC
−2
A
Peak collector current
ICP
−3
A
Collector power dissipation
PC
1.5
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
0.7±0.1
0.7±0.1
1.15±0.2
1.15±0.2
0.4±0.1
0.5±0.1
0.8 C
1
2
2.5±0.2
3
2.05±0.2
16.0±1.0
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2.5±0.1
0.65±0.1
90˚
4.5±0.2
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7.5±0.2
2.5±0.2
1: Emitter
2: Collector
3: Base
MT-3-A1 Package
Parameter
Symbol
Collector-base voltage (Emiter open)
ue
■ Electrical Characteristics Ta = 25°C ± 3°C
Unit
−50
V
IC = −1 mA, IB = 0
−50
V
−5
IE = −10 µA, IC = 0
ICBO
VCB = −20 V, IE = 0
Forward current transfer ratio
hFE1 *
on
Max
IC = −10 µA, IE = 0
VEBO
Di
sc
Typ
VCBO
Collector-base cutoff current (Emitter open)
Emiter-base voltage (Collector open)
Min
VCEO
tin
Collector-emitter voltage (Base open)
Conditions
V
− 0.1
µA
340
120
VCE = −2 V, IC = −1 A
60
Collector-emitter saturation voltage
VCE(sat)
IC = −1 A, IB = −50 mA
− 0.2
− 0.3
V
Base-emitter saturation voltage
VBE(sat)
IC = −1 A, IB = −50 mA
− 0.85
−1.20
V
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VCE = −2 V, IC = −200 mA
hFE2
fT
Cob
VCB = −10 V, IE = 50 mA, f = 200 MHz
80
VCB = −10 V, IE = 0, f = 1 MHz
45
MHz
60
pF
Pl
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
R
S
hFE1
120 to 240
170 to 340
Publication date: March 2003
SJD00074BED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SB1435
PC Ta
IC VCE
Collector-emitter saturation voltage VCE(sat) (V)
Ta=25˚C
Without heat sink
Collector power dissipation PC (W)
VCE(sat) IC
1.8
2.0
IB=–8mA
1.5
Collector current IC (A)
1.6
–6mA
–5mA
IC/IB=20
1
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1.2
–7mA
1.2
10
0.8
0.4
–2mA
0
40
80
120
160
Ta=–25˚C
0.01
Forward current transfer ratio hFE
Ta=25˚C
0.1
2
4
6
8
0.001
10
10
1
100
1 000
25˚C
–25˚C
240
160
80
10
1
fT I E
VCB=–10V
f=200MHz
TC=25˚C
100
200
160
120
80
40
0
1 000
1
Collector current IC (mA)
10
100
Emitter current IE (mA)
on
tin
ue
Collector current IC (mA)
Ta=75˚C
320
1 000
Collector current IC (mA)
240
400
0
100
Ta=25˚C
VCE=–5V
Ta=–25˚C
10
Ta=75˚C
hFE IC
10
1
0
480
IC/IB=20
Ta=75˚C
0.1
Collector-emitter voltage VCE (V)
VBE(sat) IC
1
–1mA
Transition frequency fT (MHz)
0
100
Base-emitter saturation voltage VBE(sat) (V)
–3mA
0.6
0.3
Ambient temperature Ta (°C)
0.01
–4mA
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0.9
Di
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100
80
Rth t
104
Thermal resistance Rth (°C/W)
nc
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f=1MHz
IE=0
TC=25˚C
M
ain
60
103
102
40
10
1
20
0
1
10
100
10−1
10−4
10−3
10−2
10−1
1
Time t (s)
Collector-base voltage VCB (V)
2
Without heat sink
Pl
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
Cob VCB
120
SJD00074BED
10
102
103
104
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
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company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
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pla d in
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m R ue ue yp typ r P
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du
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ct
d
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M
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(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body.
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(4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
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damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
Pl
M
ain
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/D
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(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
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