This product complies with the RoHS Directive (EU 2002/95/EC).
Power Transistors
2SB1504
Silicon PNP epitaxial planar type darlington
Unit: mm
For power switching
M
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10.8±0.2
• High forward current transfer ratio hFE
• High-speed switching
• Allowing automatic insertion with radial taping
0.85±0.1
1.0±0.1 0.8 C
0.8 C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
−50
V
Collector-emitter voltage (Base open)
VCEO
−50
V
Emitter-base voltage (Collector open)
VEBO
−7
V
Collector current
IC
−8
A
Peak collector current
ICP
−12
A
Collector power dissipation
PC
1.5
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
0.7±0.1
0.7±0.1
1.15±0.2
1.15±0.2
0.4±0.1
0.5±0.1
0.8 C
1
2
2.5±0.2
3
2.05±0.2
■ Absolute Maximum Ratings Ta = 25°C
16.0±1.0
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2.5±0.1
0.65±0.1
90˚
4.5±0.2
3.8±0.2
7.5±0.2
2.5±0.2
1: Emitter
2: Collector
3: Base
MT-3-A1 Package
Internal Connection
C
B
E
Symbol
Collector-emitter voltage (Base open)
VCEO
IC = −30 mA, IB = 0
ICBO
VCB = −50 V, IE = 0
Emitter-base cutoff current (Collector open)
IEBO
VEB = −7 V, IC = 0
hFE1 *
VCE = −3 V, IC = −4 A
1 000
500
on
tin
Collector-base cutoff current (Emitter open)
Conditions
ue
Parameter
Di
sc
■ Electrical Characteristics Ta = 25°C ± 3°C
VCE = −3 V, IC = −8 A
VCE(sat)
IC = −4 A, IB = −8 mA
VBE(sat)
IC = −4 A, IB = −8 mA
nc
e/
hFE2
Collector-emitter saturation voltage
te
na
Forward current transfer ratio
Base-emitter saturation voltage
Min
Typ
Max
Unit
−100
µA
−50
V
−2
mA
10 000
−1.5
V
−2.0
V
fT
VCB = −10 V, IE = 0.5 A, f = 200 MHz
Turn-on time
ton
IC = −4 A, IB1 = −8 mA, IB2 = 8 mA
0.5
µs
Storage time
tstg
VCC = −50 V
2.0
µs
Fall time
tf
1.0
µs
Pl
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ain
Transition frequency
20
MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
P
hFE1
1 000 to 2 500
Publication date: April 2003
Q
R
2 000 to 5 000 4 000 to 10 000
SJD00080BED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SB1504
PC Ta
IC VCE
VCE(sat) IC
−8
−100
TC=25˚C
Collector current IC (A)
1.6
1.2
IB=–2.0mA
–1.8mA
–1.6mA
–1.4mA
–1.2mA
–1.0mA
−6
IC/IB=500
−10
M
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Collector power dissipation PC (W)
Without heat sink
Collector-emitter saturation voltage VCE(sat) (V)
2.0
0.4
–0.6mA
–0.4mA
−2
–0.2mA
0
40
80
120
0
160
Ambient temperature Ta (°C)
Forward current transfer ratio hFE
TC=–25˚C
25˚C
100˚C
−1
−1
−3
−4
TC=100˚C
25˚C
–25˚C
103
−10
104
IE=0
f=1MHz
TC=25˚C
103
102
10
1
− 0.1
Collector current IC (A)
−1
−10
−100
Collector-base voltage VCB (V)
Di
sc
Safe operation area
on
tin
ue
Collector current IC (A)
−10
Cob VCB
104
−1
−1
Collector current IC (A)
VCE=–3V
102
− 0.1
−10
–25˚C
− 0.1
− 0.1
−5
hFE IC
−10
− 0.1
− 0.1
−2
105
IC/IB=500
25˚C
TC=100˚C
−1
Collector-emitter voltage VCE (V)
VBE(sat) IC
−100
−1
0
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
0
Base-emitter saturation voltage VBE(sat) (V)
–0.8mA
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0.8
−4
−100
nc
−1
t=1ms
t=10ms
− 0.1
−10
−100
103
102
10
−1 000
1
10−1
10−4
10−3
10−2
10−1
1
Time t (s)
Collector-emitter voltage VCE (V)
2
Without heat sink
Pl
t=300ms
− 0.01
−1
Rth t
104
Thermal resistance Rth (°C/W)
IC
te
na
ICP
−10
M
ain
Collector current IC (A)
e/
Non repetitive pulse
TC=25˚C
SJD00080BED
10
102
103
104
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
pla d in
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tp t f
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ct
d
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M
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(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
Pl
M
ain
te
na
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/D
isc
on
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(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
