This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SC1473, 2SC1473A
Silicon NPN triple diffusion planar type
For general amplification
2SC1473 complementary to 2SA1018
2SC1473A complementary to 2SA1767
Unit: mm
4.0±0.2
5.1±0.2
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0.7±0.1
12.9±0.5
• High collector-emitter voltage (Base open) VCEO
• High transition frequency fT
0.7±0.2
■ Features
■ Absolute Maximum Ratings Ta = 25°C
2SC1473
Symbol
Rating
Unit
VCBO
250
V
2SC1473A
0.45+0.15
–0.1
0.45+0.15
–0.1
2.5+0.6
–0.2
2.5+0.6
–0.2
300
Collector-emitter voltage 2SC1473
(Base open)
2SC1473A
VCEO
Emitter-base voltage (Collector open)
VEBO
200
1
V
2 3
300
Collector current
IC
Peak collector current
ICP
Collector power dissipation
PC
Junction temperature
Tj
Storage temperature
Tstg
7
V
70
mA
100
mA
750
mW
150
°C
−55 to +150
°C
2.3±0.2
Parameter
Collector-base voltage
(Emitter open)
EIAJ: SC-43A
1: Emitter
2: Collector
3: Base
TO-92-B1 Package
Collector-emitter voltage
(Base open)
Symbol
ce
/D
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on
tin
Parameter
ue
■ Electrical Characteristics Ta = 25°C ± 3°C
2SA1473
2SA1473A
Emitter-base voltage (Collector open)
2SA1473
2SA1473A
ICEO
VCE = 120 V, Ta = 60°C, IB = 0
1
VCE = 120 V, IB = 0
1
IC = 50 mA, IB = 5 mA
int
VCE = 10 V, IC = 5 mA
VCB = 10 V, IE = −10 mA, f = 200 MHz
fT
VCB = 10 V, IE = 0, f = 1 MHz
Cob
200
Unit
V
300
hFE
Transition frequency
Max
IE = 1 µA, IC = 0
VCE(sat)
Collector output capacitance
(Common base, input open circuited)
Typ
VEBO
Forward current transfer ratio *
Collector-emitter saturation voltage
Min
IC = 100 µA, IB = 0
Ma
en
an
Collector-emitter cutoff
current (Base open)
Conditions
VCEO
7
V
60
50
µA
220
1.2
V
80
MHz
10
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
R
hFE
60 to 150
100 to 220
Publication date: March 2004
SJC00105BED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC1473, 2SC1473A
IC VCE
Collector current IC (mA)
0.6
0.4
Ta = 25°C
1.8 mA
1.6 mA
IB = 2 mA
1.4 mA
1.2 mA
100
0.8
IC VBE
120
100
1.0 mA
80
0.8 mA
0.6 mA
60
VCE = 10 V
25°C
0.4 mA
Ta = 75°C
80
0.2
80
120
160
Collector current IC (mA)
100
80
60
40
20
1.6
2.0
180
Ta = 75°C
25°C
120
−25°C
60
0
0.1
1
10
Collector current IC (mA)
2
8
0
10
0
0.4
100
0.8
1.2
1.6
2.0
Base-emitter voltage VBE (V)
IB VBE
3.0
IC / IB = 10
VCE = 10 V
Ta = 25°C
2.5
1
Ta = 75°C
25°C
0.1
2.0
1.5
1.0
−25°C
0.5
0.01
0.1
1
10
0
100
0
Collector current IC (mA)
VCB = 10 V
Ta = 25°C
120
80
40
0
−1
−10
Emitter current IE (mA)
SJC00105BED
0.2
0.4
0.6
0.8
1.0
Base-emitter voltage VBE (V)
fT I E
160
Transition frequency fT (MHz)
en
int
Ma
Forward current transfer ratio hFE
an
VCE = 10 V
300
6
10
ce
/D
isc
on
tin
hFE IC
360
4
100
ue
1.2
Base current IB (mA)
240
2
VCE(sat) IC
VCE = 10 V
Ta = 25°C
0.8
0
Base current IB (mA)
IC I B
0.4
0
Collector-emitter voltage VCE (V)
120
0
20
−100
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
40
40
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0
Ambient temperature Ta (°C)
0
0.2 mA
20
Collector-emitter saturation voltage VCE(sat) (V)
0
40
−25°C
60
M
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Collector power dissipation PC (W)
120
Collector current IC (mA)
PC Ta
1.0
Cob VCB
10
IE = 0
f = 1 MHz
Ta = 25°C
8
6
4
2
0
1
10
Collector-base voltage VCB (V)
100
40
80
120
160
Ambient temperature Ta (°C)
104
IEBO Ta
103
10
200
1
VEB = 5 V
103
102
10
0
40
80
120
SJC00105BED
160
Ambient temperature Ta (°C)
200
1 000
100
0.1
ICP
IC
1
1
10
100
2SC1473A
VCB = 250 V
Collector current IC (mA)
ICBO Ta
2SC1473
10
2
IEBO (Ta)
IEBO (Ta = 25°C)
104
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1
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ICBO (Ta)
ICBO (Ta = 25°C)
M
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This product complies with the RoHS Directive (EU 2002/95/EC).
2SC1473, 2SC1473A
Safe operation area
Single pulse
Ta = 25°C
t = 1 ms
t = 10 ms
10
DC
Collector-emitter voltage VCE (V)
1 000
3
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
M
Di ain
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(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
d
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(4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
Pl
ea
Ma
int
en
an
ce
/D
isc
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ue
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
