This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SC2295
Silicon NPN epitaxial planar type
For high-frequency amplification
Complementary to 2SA1022
Unit: mm
M
Di ain
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0.40+0.10
–0.05
0.16+0.10
–0.06
0.4±0.2
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• Optimum for RF amplification of FM/AM radios
• High transition frequency fT
• Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing
5˚
1.50+0.25
–0.05
■ Features
2.8+0.2
–0.3
3
(0.95) (0.95)
1.9±0.1
(0.65)
2
1
2.90+0.20
–0.05
Rating
Unit
VCBO
30
V
Collector-emitter voltage (Base open)
VCEO
20
V
Emitter-base voltage (Collector open)
VEBO
5
V
Collector current
IC
30
mA
Collector power dissipation
PC
200
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
1.1+0.2
–0.1
Symbol
0 to 0.1
Parameter
Collector-base voltage (Emitter open)
1.1+0.3
–0.1
10˚
■ Absolute Maximum Ratings Ta = 25°C
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
Marking Symbol: V
■ Electrical Characteristics Ta = 25°C ± 3°C
Symbol
Collector-base cutoff current (Emitter open)
ICBO
VCB = 10 V, IE = 0
hFE
VCB = 10 V, IE = −1 mA
70
150
tin
Forward current transfer ratio *
ue
Parameter
Conditions
Min
Typ
Max
Unit
0.1
µA
220
VCB = 10 V, IE = −1 mA, f = 200 MHz
VCB = 10 V, IE = −1 mA, f = 5 MHz
Reverse transfer impedance
Zrb
VCB = 10 V, IE = −1 mA, f = 2 MHz
22
50
Ω
Reverse transfer capacitance
(Common emitter)
Cre
VCB = 10 V, IE = −1 mA, f = 10.7 MHz
0.9
1.5
pF
on
fT
NF
Di
sc
Transition frequency
te
na
nc
e/
Noise figure
250
2.8
MHz
4.0
dB
Rank
B
hFE
70 to 140
Publication date: March 2003
C
110 to 220
Pl
M
ain
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
SJC00112BED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC2295
PC Ta
IC VCE
IC I B
12
Ta = 25°C
Collector current IC (mA)
10
160
VCE = 10 V
Ta = 25°C
IB = 100 µA
12.5
Collector current IC (mA)
200
15.0
80 µA
8
60 µA
10.0
M
Di ain
sc te
on na
tin nc
ue e/
d
Collector power dissipation PC (mW)
240
80
40
0
40
80
120
2
20 µA
IB VBE
0
6
12
VCE = 10 V
Ta = 25°C
2.5
Collector current IC (mA)
80
60
40
0
VCE = 10 V
25°C
40
Ta = 75°C
−25°C
30
20
0
0.6
0.8
1.0
0.4
0.8
40
60
80
100
Base current IB (µA)
1.2
1.6
2.0
100
IC / IB = 10
10
1
Ta = 75°C
25°C
0.1
0.01
0.1
Base-emitter voltage VBE (V)
−25°C
1
10
100
Collector current IC (mA)
Di
sc
hFE IC
240
nc
Ta = 75°C
25°C
120
80
300
200
100
VCB = 10 V
f = 100 MHz
Ta = 25°C
40
1
10
Collector current IC (mA)
100
0
− 0.1
Zrb IE
60
Pl
−25°C
0
0.1
2
Transition frequency fT (MHz)
160
te
na
200
M
ain
Forward current transfer ratio hFE
e/
VCE = 10 V
fT I E
400
−1
−10
Emitter current IE (mA)
SJC00112BED
−100
Reverse transfer impedance Zrb (Ω)
on
tin
ue
Base-emitter voltage VBE (V)
0
20
VCE(sat) IC
10
20
0.4
0
18
50
100
0.2
5.0
IC VBE
60
0
7.5
Collector-emitter voltage VCE (V)
120
Base current IB (µA)
40 µA
0
160
Ambient temperature Ta (°C)
0
4
Collector-emitter saturation voltage VCE(sat) (V)
0
6
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120
VCB = 10 V
f = 2 MHz
Ta = 25°C
50
40
30
20
10
0
− 0.1
−1
Emitter current IE (mA)
−10
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC2295
NF IE
Noise figure NF (dB)
10
2.0
IC = 3 mA
1 mA
8
Vie = gie + jbie
VCE = 10 V
20
1.5
1.0
4
2
16
100
−2 mA
58
10
0
− 0.1
100
bre gre
Forward transfer susceptance bfe (mS)
− 0.1
IE = −1 mA
− 0.2
− 0.3
58
− 0.4
100
− 0.5
f = 10.7 MHz
− 0.1 mA
58
−1 mA 100
−20
− 0.3
8
− 0.2
− 0.1
32
40
boe goe
yoe = goe + jboe
VCE = 10 V
−2 mA 100
IE = −4 mA
−60
58
100
−80
yfe = gfe + jbfe
VCE = 10 V
0
20
40
60
80
100
Forward transfer conductance gfe (mS)
IE = −1 mA
100
0.8
0.6
58
0.4
0.2
f = 10.7 MHz
0
0
0.1
0.2
0.3
0.4
0.5
Output conductance goe (mS)
Pl
M
ain
te
na
nc
e/
Di
sc
on
tin
Reverse transfer conductance gre (mS)
24
1.0
−40
−120
0
16
1.2
58
−100
− 0.4
0
Input conductance gie (mS)
10.7
ue
− 0.6
− 0.5
0
−10
bfe gfe
0
f = 10.7 MHz
yre = gre + jbre
VCE = 10 V
−1
f = 10.7 MHz
Emitter current IE (mA)
Collector-emitter voltage VCE (V)
0
8
4
Output susceptance boe (mS)
1
12
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0.5
0
0.1
Reverse transfer susceptance bre (mS)
6
−7 mA
−4 mA
IE = −1 mA
VCB = 6 V
f = 100 MHz
Rg = 50 Ω
Ta = 25°C
f = 10.7 MHz
Ta = 25°C
2.5
bie gie
24
M
Di ain
sc te
on na
tin nc
ue e/
d
Reverse transfer capacitance
Cre (pF)
(Common emitter)
12
Input susceptance bie (mS)
Cre VCE
3.0
SJC00112BED
3
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
pla d in
ea
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pla m d de
v
ht isi
ne ai ma s fo
tp t f
:// ol d d d nte inte llow
ww lo is is na n
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se g U tin tin t e ou
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ico L d d e
e
ro
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du
pa ou e pe
ct
d
na t l
life
so ate
cy
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cle
.co inf
sta
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/e a
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.
n.
M
Di ain
sc te
on na
tin nc
ue e/
d
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
Pl
M
ain
te
na
nc
e
/D
isc
on
tin
ue
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
