This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SC2404
Silicon NPN epitaxial planar type
For high-frequency amplification
Unit: mm
M
Di ain
sc te
on na
tin nc
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d
0.40+0.10
–0.05
■ Features
0.16+0.10
–0.06
0.4±0.2
5˚
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1.50+0.25
–0.05
• Optimum for RF amplification of FM/AM radios
• High transition frequency fT
• Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing
2.8+0.2
–0.3
3
(0.95) (0.95)
1.9±0.1
(0.65)
2
1
2.90+0.20
–0.05
■ Absolute Maximum Ratings Ta = 25°C
Unit
Collector-base voltage (Emitter open)
VCBO
30
V
Collector-emitter voltage (Base open)
VCEO
20
V
Emitter-base voltage (Collector open)
VEBO
3
V
Collector current
IC
15
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
1.1+0.2
–0.1
Rating
0 to 0.1
Symbol
1.1+0.3
–0.1
10˚
Parameter
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
Marking Symbol: U
■ Electrical Characteristics Ta = 25°C ± 3°C
Symbol
Collector-base voltage (Emitter open)
VCBO
IC = 10 µA, IE = 0
30
V
VEBO
IE = 10 µA, IC = 0
3
V
VBE
VCB = 6 V, IE = −1 mA
hFE
VCB = 6 V, IE = −1 mA
65
450
on
tin
Emitter-base voltage (Collector open)
ue
Parameter
Di
sc
Base-emitter voltage
Forward current transfer ratio *
Conditions
Min
Typ
Max
0.72
Unit
V
260
VCB = 6 V, IE = −1 mA, f = 100 MHz
Cre
VCB = 6 V, IE = −1 mA, f = 10.7 MHz
0.8
Power gain
GP
VCB = 6 V, IE = −1 mA, f = 100 MHz
24
dB
NF
VCB = 6 V, IE = −1 mA, f = 100 MHz
3.3
dB
M
ain
te
na
nc
Transition frequency
e/
fT
Reverse transfer capacitance
(Common emitter)
Noise figure
650
MHz
1.0
pF
Pl
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
C
D
hFE
65 to 160
100 to 260
Publication date: March 2003
SJC00114BED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC2404
PC Ta
IC VCE
Ta = 25°C
10
Collector current IC (mA)
Collector current IC (mA)
120
VCE = 6 V
Ta = 25°C
IB = 100 µA
10
160
12
80 µA
8
60 µA
8
M
Di ain
sc te
on na
tin nc
ue e/
d
Collector power dissipation PC (mW)
IC I B
12
200
80
40
0
40
80
120
160
Collector-emitter saturation voltage VCE(sat) (V)
VCE = 6 V
−25°C
20
15
10
5
0
0.4
0.8
4
8
12
0
16
0
40
1.2
1.6
2.0
10
1
25°C
0.1
Ta = 75°C
−25°C
0.01
0.1
1
10
120
160
hFE IC
360
IC / IB = 10
240
180
Ta = 75°C
120
25°C
−25°C
60
0
0.1
100
VCE = 6 V
300
1
10
100
Collector current IC (mA)
Collector current IC (mA)
nc
400
200
0
− 0.1
−1
−10
Emitter current IE (mA)
2
2.0
1.6
1.2
Pl
600
Cob VCB
IC = 1 mA
f = 10.7 MHz
Ta = 25°C
−100
0.8
0.4
0
0.1
1
10
100
Collector-emitter voltage VCE (V)
SJC00114BED
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
800
te
na
1 000
M
ain
Transition frequency fT (MHz)
e/
VCB = 6 V
Ta = 25°C
Cre VCE
2.4
Reverse transfer capacitance
Cre (pF)
(Common emitter)
Di
sc
fT I E
1 200
on
tin
ue
Base-emitter voltage VBE (V)
100
80
Base current IB (µA)
VCE(sat) IC
25°C
Ta = 75°C
0
Collector-emitter voltage VCE (V)
IC VBE
25
4
2
Forward current transfer ratio hFE
0
30
Collector current IC (mA)
20 µA
2
Ambient temperature Ta (°C)
0
40 µA
4
6
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0
6
1.2
IE = 0
f = 1 MHz
Ta = 25°C
1.0
0.8
0.6
0.4
0.2
0
0
5
10
15
20
25
Collector-base voltage VCB (V)
30
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC2404
GP I E
f = 100 MHz
Rg = 50 Ω
Ta = 25°C
35
30
f = 100 MHz
Rg = 50 kΩ
Ta = 25°C
10
Noise figure NF (dB)
VCE = 10 V
25
6V
bie gie
20
8
yie = gie + jbie
VCE = 10 V
18
15
6
VCE = 6 V, 10 V
4
10
100
12
8
6
−10
0
− 0.1
−100
Emitter current IE (mA)
25
−4 mA
−1 mA
58
IE = −7 mA
100
−5
f = 150 MHz
−20
−40
−1 mA
1.0
150
−2 mA
−4 mA 150
− 0.3
− 0.2
− 0.1
100
9
12
15
100
150
−2 mA
−4 mA
0.8
100
−7 mA
0.6
58
0.4
25
0.2
yfe = gfe + jbfe
VCE = 10 V
f = 10.7 MHz
0
0
20
40
60
80
100
Forward transfer conductance gfe (mS)
0
0.1
0.2
yoe = goe + jboe
VCE = 10 V
0.3
0.4
0.5
Output conductance goe (mS)
Pl
M
ain
te
na
nc
e/
Di
sc
on
tin
Reverse transfer conductance gre (mS)
58
−80
−120
0
6
boe goe
1.2
100
−60 f = 150 MHz
IE = −7 mA
ue
− 0.4
3
Input conductance gie (mS)
10.7
58
−100
−6
− 0.5
f = 10.7 MHz
0
IE = − 0.5 mA
−1 mA
−1
−4
0
−100
Output susceptance boe (mS)
Forward transfer susceptance bfe (mS)
yre = gre + jbre
VCE = 10 V
− 0.4 mA
0
10.7
25
−3
−10
bfe gfe
0
−2
−1
Emitter current IE (mA)
bre gre
58
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se g U tin tin t e ou
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−1
58
−1 mA
25
2
0
− 0.1
Reverse transfer susceptance bre (mS)
10
4
2
5
−7 mA
100
−2 mA
14
IE = − 0.5 mA
20
150
−4 mA
16
M
Di ain
sc te
on na
tin nc
ue e/
d
Power gain GP (dB)
NF IE
12
Input susceptance bie (mS)
40
SJC00114BED
3
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
pla d in
ea
ne clu
se
pla m d de
v
ht isi
ne ai ma s fo
tp t f
:// ol d d d nte inte llow
ww lo is is na n
i
w. win con con nce anc ng f
se g U tin tin t e ou
m R ue ue yp typ r P
ico L d d e
e
ro
n. ab typ ty
du
pa ou e pe
ct
d
na t l
life
so ate
cy
nic st
cle
.co inf
sta
.jp orm
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/e a
n/ tio
.
n.
M
Di ain
sc te
on na
tin nc
ue e/
d
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
Pl
M
ain
te
na
nc
e
/D
isc
on
tin
ue
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
