This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SC2405
Silicon NPN epitaxial planar type
For low-frequency and low-noise amplification
Complementary to 2SA1034
Package
M
Di ain
sc te
on na
tin nc
ue e/
d
Features
Code
Mini3-G1
Low noise voltage NV
High forward current transfer ratio hFE
Mini type package, allowing downsizing of the equipment and automatic
insertion through the tape packing.
Parameter
d
p
l
ea
an incl
se
ed ud
p
lan m m es
ht visi
tp t f
ed ain ain foll
:// ol d d te te ow
ww lo is is na n
i
w. win con con nce anc ng f
se g U tin tin t e ou
m R ue ue yp typ r P
ico L d d e
e
ro
n. ab typ ty
du
pa ou e pe
ct
d
na t l
life
so ate
cy
nic st
cle
.co inf
sta
.jp orm
ge
/e a
n/ tio
.
n.
Absolute Maximum Ratings Ta = 25°C
Pin Name
1. Base
2. Emitter
3. Collector
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
35
V
Collector-emitter voltage (Base open)
VCEO
35
V
Emitter-base voltage (Collector open)
VEBO
5
V
50
mA
100
mA
200
mW
150
°C
–55 to +150
°C
Collector current
IC
Peak collector current
ICP
Collector power dissipation
PC
Junction temperature
Tj
Storage temperature
Tstg
Electrical Characteristics Ta = 25°C±3°C
Symbol
Min
Typ
Max
Unit
VCBO
IC = 10 mA, IE = 0
35
V
VCEO
IC = 2 mA, IB = 0
35
V
VEBO
IE = 10 mA, IC = 0
5
V
VBE
VCE = 1 V, IC = 100 mA
Collector-base cutoff current (Emitter open)
ICBO
Collector-emitter cutoff current (Base open)
Forward current transfer ratio *
ue
Collector-base voltage (Emitter open)
Conditions
on
tin
Parameter
Marking Symbol: S
Collector-emitter voltage (Base open)
/D
isc
Emitter-base voltage (Collector open)
M
ain
te
na
nc
e
Collector-emitter saturation voltage
1.0
V
VCB = 10 V, IE = 0
0.1
mA
ICEO
VCB = 10 V, IB = 0
1
mA
hFE
VCE = 5 V, IC = 2 mA
700
0.6
V
VCE(sat)
Transition frequency
fT
Noise voltage
NV
0.7
180
IC = 100 mA, IB = 10 mA
VCB = 5 V, IE = –2 mA, f = 200 MHz
200
MHz
VCB = 10 V, IC = 1 mA, GV = 80 dB,
Rg = 100 kΩ, Function = FLAT
110
mV
Pl
Base-emitter voltage
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
R
S
T
hFE
180 to 360
260 to 520
360 to 700
Merking symbol
TR
TS
TT
Publication date : October 2008
SJC00115CED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC2405
2SC2406_IC-VCE
2SC2406_PC-Ta
PC Ta
IC IB
160
240
160
Ta = 25°C
VCE = 5 V
Ta = 25°C
Collector current IC (mA)
200
160
120
80
IB = 350 µA
120
300 µA
100
250 µA
80
200 µA
60
150 µA
Collector current IC (mA)
140
120
80
M
Di ain
sc te
on na
tin nc
ue e/
d
Collector power dissipation PC (mW)
2SC2406_IC-IB
IC VCE
40
120
160
Ambient temperature Ta (°C)
2SC2406_IC-VBE
IC VBE
120
Collector current IC (mA)
100
Ta = 75°C
−25°C
80
60
40
20
0
0
0.4
0.8
1.2
1.6
2.0
fT IE
nc
e
/D
isc
VCB = 5 V
Ta = 25°C
200
te
na
M
ain
Transition frequency fT (MHz)
300
100
0
− 0.1
−1
−10
Emitter current IE (mA)
2
on
tin
2SC2406_fT-IE
400
4
8
0
12
0
−100
0.1
0.2
0.3
0.4
Collector-emitter voltage VCE (V)
Base current IB (mA)
2SC2406_VCE(sat)-IC
2SC2406_hFE-IC
100
IC / IB = 10
10
0.5
hFE IC
1000
VCE = 5 V
800
600
1
Ta = 75°C
400
0.1
25°C
25°C
−25°C
Ta = 75°C
200
−25°C
0.01
0.1
1
ue
Base-emitter voltage VBE (V)
500
0
VCE(sat) IC
VCE = 5 V
25°C
0
FE
80
Collector-emitter saturation voltage VCE(sat) (V)
40
d
Pl
p
l
ea
an incl
se
ed ud
p
lan m m es
ht visi
tp t f
ed ain ain foll
:// ol d d te te ow
ww lo is is na n
i
w. win con con nce anc ng f
se g U tin tin t e ou
m R ue ue yp typ r P
ico L d d e
e
ro
a
n
t
t
dhu
y
y
b
Noise voltage NV (mV)
Forward
current
transfer
ratio
. p o pe p
ct
ed
an ut
life
as la
on tes
cy
cle
ic. t i
co nfo
sta
.jp rm
ge
/e a
n/ tio
.
n.
0
40
50 µA
20
Collector output capacitance
(Common base, input open circuited) Cob (pF)
0
100 µA
40
10
100
0
0.1
1
10
Collector current IC (mA)
Collector current IC (mA)
2SC2406_Cob-VCB
2SC2406_NV-VCE
Cob VCB
10
IE = 0
f = 1 MHz
Ta = 25°C
8
100
NV VCE
160
120
IC = 1 mA
GV = 80 dB
Function = FLAT
Rg = 100 kΩ
6
80
4
22 kΩ
40
2
0
0.1
1
10
100
Collector-base voltage VCB (V)
SJC00115CED
0
4.7 kΩ
1
10
100
Collector-emitter voltage VCE (V)
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC2405
2SC2406_NV-IC
2SC2406_NV-VCE
NV VCE
NV IC
160
300
300
VCE = 10 V
GV = 80 dB
Function = FLAT
IC = 1 mA
GV = 80 dB
Function = RIAA
180
120
Rg = 100 kΩ
80
22 kΩ
VCE = 10 V
GV = 80 dB
Function = RIAA
180
Rg = 100 kΩ
120
M
Di ain
sc te
on na
tin nc
ue e/
d
22 kΩ
240
120
Noise voltage NV (mV)
240
Noise voltage NV (mV)
Rg = 100 kΩ
Noise voltage NV (mV)
2SC2406_NV-IC
NV IC
60
1
10
100
Collector-emitter voltage VCE (V)
0
0.01
NV Rg
0
0.01
4.7 kΩ
1
0.1
1
Collector current IC (mA)
NV Rg
VCE = 10 V
GV = 80 dB
Function = FLAT
120
IC = 1 mA
0.5 mA
0.1 mA
240
Noise voltage NV (mV)
160
40
0.1
Collector current IC (mA)
300
80
22 kΩ
60
2SC2406_NV-Rg
2SC2406_NV-Rg
VCE = 10 V
GV = 80 dB
Function = RIAA
180
IC = 1 mA
120
0.5 mA
60
0.1 mA
1
10
100
0
1
10
100
Signal source resistance Rg (kΩ)
nc
e
/D
isc
on
tin
ue
Signal source resistance Rg (kΩ)
te
na
0
M
ain
Noise voltage NV (mV)
4.7 kΩ
4.7 kΩ
d
Pl
p
l
ea
an incl
se
ed ud
p
lan m m es
ht visi
tp t f
ed ain ain foll
:// ol d d te te ow
ww lo is is na n
i
w. win con con nce anc ng f
se g U tin tin t e ou
m R ue ue yp typ r P
ico L d d e
e
ro
n. ab typ ty
du
pa ou e pe
ct
d
na t l
life
so ate
cy
nic st
cle
.co inf
sta
.jp orm
ge
/e a
n/ tio
.
n.
0
40
SJC00115CED
3
Pl
on
tin
/D
isc
nc
e
te
na
ue
+0.25
−0.05
3
1
4
2
(0.95)
(0.95)
1.9 ±0.1
2.90 −0.05
+0.20
10°
+0.3
−0.1
+0.2
−0.1
Mini3-G1
0.40 −0.05
+0.10
SJC00115CED
±0.2
+0.2
−0.3
d
p
l
ea
an incl
se
ed ud
p
lan m m es
ht visi
ain a f(0.65)
1.50
t0pto 0.1 t f
o
1.1 e
d
:// ol d d te inte llow
2.8
ww lo 1.1is is na n
i
n
a
w
w. in con con nce nc g f
se g U tin tin t e ou
m R ue ue yp typ r P
ico L d d e
e
ro
n. ab typ ty
5°d
uc
pa ou e pe
t li
d
na t l
fe
a
so te
cy
nic st
cle
.co inf
sta
.jp orm
ge
/e a
0.4
n/ tio
.
n.
M
ain
M
Di ain
sc te
on na
tin nc
ue e/
d
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC2405
Unit: mm
0.16 −0.05
+0.10
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any
other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any
other company which may arise as a result of the use of technical information described in this book.
M
Di ain
sc te
on na
tin nc
ue e/
d
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
d
p
lan inc
ea
se
ed lud
p
lan m m es
ht visi
tp t f
ed ain ain foll
:// ol d d te te ow
ww lo is is na n
i
w. win con con nce anc ng f
se g U tin tin t e ou
m R ue ue yp typ r P
ico L d d e
e
ro
n. ab typ ty
du
pa ou e pe
ct
d
na t l
life
so ate
cy
nic st
cle
.co inf
sta
.jp orm
ge
/e a
n/ tio
.
n.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company.
Pl
M
ain
te
na
nc
e
/D
isc
on
tin
ue
20080805
