2SC370700L

This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SC3707 Silicon NPN epitaxial planar type For UHF amplification Unit: mm M Di ain sc te on na tin nc ue e/ d 0.40+0.10 –0.05 ■ Features 0.16+0.10 –0.06 0.4±0.2 1.50+0.25 –0.05 5˚ d p lan inc ea se ed lud p lan m m es ht visi tp t f ed ain ain foll :// ol d d te te ow ww lo is is na n i w. win con con nce anc ng f se g U tin tin t e ou m R ue ue yp typ r P ico L d d e e ro n. ab typ ty du pa ou e pe ct d na t l life so ate cy nic st cle .co inf sta .jp orm ge /e a n/ tio . n. 2.8+0.2 –0.3 3 • Possible with the small current and low voltage • High transition frequency fT • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing (0.95) (0.95) 1.9±0.1 (0.65) 2 1 2.90+0.20 –0.05 ■ Absolute Maximum Ratings Ta = 25°C Unit Collector-base voltage (Emitter open) VCBO 10 V Collector-emitter voltage (Base open) VCEO 7 V Emitter-base voltage (Collector open) VEBO 2 V Collector current IC 10 mA Collector power dissipation PC 50 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 10˚ 1.1+0.2 –0.1 Rating 1.1+0.3 –0.1 Symbol 0 to 0.1 Parameter 1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini3-G1 Package Marking Symbol: 2X ■ Electrical Characteristics Ta = 25°C ± 3°C Symbol Collector-base cutoff current (Emitter open) ICBO IEBO hFE VCE = 1 V, IC = 1 mA fT VCE = 1 V, IC = 1 mA, f = 0.8 GHz Di sc Forward current transfer ratio on tin Emitter-base cutoff current (Collector open) ue Parameter Transition frequency nc e/ Collector output capacitance (Common base, input open circuited) te na Forward transfer gain M ain Maximum unilateral power gain Noise figure Conditions Min Typ Max Unit VCB = 10 V, IE = 0 1 µA VEB = 1.5 V, IC = 0 1 µA 50 150  4 GHz VCB = 1 V, IE = 0, f = 1 MHz 0.4 pF S21e2 VCE = 1 V, IC = 1 mA, f = 0.8 GHz 6.0 dB GUM VCE = 1 V, IC = 1 mA, f = 0.8 GHz 15 dB NF VCE = 1 V, IC = 1 mA, f = 0.8 GHz 3.5 dB Cob Pl Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. Handle the product with care because this is sensitive to the electrostatic breakdown by its structure Publication date: February 2003 SJC00135BED 1 This product complies with the RoHS Directive (EU 2002/95/EC). 2SC3707 PC  Ta IC  VCE IC  VBE 6 Ta = 25°C Collector power dissipation PC (mW) IB = 50 µA 45 µA Collector current IC (mA) 5 40 µA 35 µA 4 30 µA 25 µA VCE = 1 V 50 40 25°C Ta = 75°C M Di ain sc te on na tin nc ue e/ d 60 60 Collector current IC (mA) 80 40 20 20 µA 15 µA 2 10 µA 5 µA 40 80 120 0 160 Ambient temperature Ta (°C) 0.4 0.8 1.2 1.6 2.0 0 2.4 0 0.4 0.8 Forward current transfer ratio hFE Ta = 75°C 25°C −25°C 0.1 10 160 Ta = 75°C 120 25°C 80 −25°C 40 10 2.0 fT  I C 10 8 6 4 2 0 0.1 100 VCE = 1 V f = 800 MHz Ta = 25°C 1 10 100 Collector current IC (mA) Collector current IC (mA) 0.8 te na 1.0 0.4 0.2 0 0.1 1 10 Collector-base voltage VCB (V) 2 20 16 12 100 8 4 0 0.1 NF  IC 6 VCE = 1 V f = 800 MHz Ta = 25°C Pl 0.6 GUM  IC 24 5 Noise figure NF (dB) Di sc nc e/ IE = 0 f = 1 MHz Ta = 25°C M ain Collector output capacitance C (pF) (Common base, input open circuited) ob Cob  VCB 1.2 Maximum unilateral power gain GUM (dB) on tin ue Collector current IC (mA) 200 1 1.6 12 VCE = 1 V 0 0.1 100 1.2 Base-emitter voltage VBE (V) hFE  IC 1 1 0 240 IC / IB = 10 10 0.01 0.1 20 Collector-emitter voltage VCE (V) VCE(sat)  IC 100 −25°C 10 Transition frequency fT (GHz) 0 30 d p lan inc ea se ed lud p lan m m es ht visi tp t f ed ain ain foll :// ol d d te te ow ww lo is is na n i w. win con con nce anc ng f se g U tin tin t e ou m R ue ue yp typ r P ico L d d e e ro n. ab typ ty du pa ou e pe ct d na t l life so ate cy nic st cle .co inf sta .jp orm ge /e a n/ tio . n. 1 0 Collector-emitter saturation voltage VCE(sat) (V) 3 VCE = 1 V (Rg = 50 Ω) f = 800 MHz Ta = 25°C 4 3 2 1 1 10 Collector current IC (mA) SJC00135BED 100 0 0.1 1 10 Collector current IC (mA) 100 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. 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