This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SC3939
Silicon NPN epitaxial planar type
For low-frequency driver amplification
Complementary to 2SA1533
4.0±0.2
Unit: mm
8.0±0.2
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5.0±0.2
■ Features
0.7±0.2
0.7±0.1
13.5±0.5
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• High collector-emitter voltage (Base open) VCEO
• Optimum for the driver stage of a low-frequency and 25 W to 30
W output amplifier
• Allowing supply with the radial taping
■ Absolute Maximum Ratings Ta = 25°C
Symbol
Rating
Unit
VCBO
80
V
Collector-emitter voltage (Base open)
VCEO
80
V
Emitter-base voltage (Collector open)
VEBO
5
V
Collector current
IC
0.5
A
Peak collector current
ICP
1
A
Collector power dissipation
PC
1
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
0.45+0.15
–0.1
0.45+0.2
–0.1
(1.27)
(1.27)
2.3±0.2
Parameter
Collector-base voltage (Emitter open)
1: Emitter
2: Collector
2.54±0.15
3: Base
TO-92NL-A1 Package
1 2 3
Parameter
Symbol
Collector-base voltage (Emitter open)
ue
■ Electrical Characteristics Ta = 25°C ± 3°C
tin
VCBO
Conditions
Min
Typ
Max
Unit
IC = 10 µA, IE = 0
80
V
VCEO
IC = 100 µA, IB = 0
80
V
Emitter-base voltage (Collector open)
VEBO
IE = 10 µA, IC = 0
5
V
ICBO
VCB = 20 V, IE = 0
Di
sc
on
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
nc
e/
Forward current transfer ratio *1
hFE1 *2
VCE = 10 V, IC = 150 mA
130
50
0.1
µA
330
VCE = 5 V, IC = 500 mA
VCE(sat)
IC = 300 mA, IB = 30 mA
0.2
0.4
Base-emitter saturation voltage
VBE(sat)
IC = 300 mA, IB = 30 mA
0.85
1.20
VCB = 10 V, IE = −50 mA, f = 200 MHz
120
VCB = 10 V, IE = 0, f = 1 MHz
11
M
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te
na
hFE2
Collector-emitter saturation voltage
fT
Collector output capacitance
(Common base, input open circuited)
Cob
V
V
MHz
20
pF
Pl
Transition frequency
100
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
R
S
hFE1
130 to 220
185 to 330
Publication date: March 2003
SJC00149BED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC3939
PC Ta
IC VCE
IC I B
1.2
Ta = 25°C
Collector current IC (A)
1.0
0.8
VCE = 10 V
Ta = 25°C
IB = 10 mA
9 mA
8 mA
7 mA
0.8
6 mA
5 mA
1.0
Collector current IC (A)
1.0
1.2
0.8
M
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Collector power dissipation PC (W)
1.2
0.4
0.2
0
40
80
120
2 mA
0
160
10
Base-emitter saturation voltage VBE(sat) (V)
Ta = 75°C
25°C
−25°C
0.01
10
0
0
2
4
6
8
10
0
2
100
Ta = −25°C
1
75°C
0.1
0.01
1 000
10
100
8
10
hFE IC
VCE = 10 V
250
200
Ta = 75°C
150
25°C
−25°C
100
50
0
1
1 000
1
10
100
1 000
Collector current IC (mA)
Collector current IC (mA)
120
40
0
−1
−10
Emitter current IE (mA)
2
ICBO Ta
104
IE = 0
f = 1 MHz
Ta = 25°C
−100
VCB = 20 V
40
103
30
20
Pl
80
Cob VCB
50
ICBO (Ta)
ICBO (Ta = 25°C)
nc
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na
160
M
ain
Transition frequency fT (MHz)
e/
VCB = 10 V
Ta = 25°C
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
Di
sc
fT I E
200
on
tin
ue
Collector current IC (mA)
25°C
6
300
IC / IB = 10
10
4
Base current IB (mA)
VBE(sat) IC
1
1
0.4
0.2
1 mA
100
IC / IB = 10
0.1
0.6
Collector-emitter voltage VCE (V)
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
3 mA
0.4
0.2
Ambient temperature Ta (°C)
0.001
4 mA
Forward current transfer ratio hFE
0
0.6
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0.6
102
10
10
0
1
10
Collector-base voltage VCB (V)
SJC00149BED
100
1
0
40
80
120
160
Ambient temperature Ta (°C)
tin
on
ue
102
1
Collector current IC (A)
103
10
0
40
80
120
0.001
0.1
Ambient temperature Ta (°C)
Collector-emitter voltage VCE (V)
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Di
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105
Pl
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ICEO (Ta)
ICEO (Ta = 25°C)
M
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This product complies with the RoHS Directive (EU 2002/95/EC).
2SC3939
VCE = 10 V
ICEO Ta
10
Safe operation area
Single pulse
Ta = 25°C
104
1
ICP
IC
t = 10 ms
0.1
DC
1
SJC00149BED
t=1s
0.01
10
100
3
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
pla d in
ea
ne clu
se
pla m d de
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tp t f
:// ol d d d nte inte llow
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d
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M
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(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
Pl
M
ain
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(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
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