This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SC5632G
Silicon NPN epitaxial planar type
For high-frequency amplification and switching
■ Package
• High transition frequency fT
• S-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing
• Code
SMini3-F2
• Marking Symbol: 2R
• Pin Name
1: Base
2: Emitter
3: Collector
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■ Features
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
15
V
Collector-emitter voltage (Base open)
VCEO
8
V
Emitter-base voltage (Collector open)
VEBO
3
V
Collector current
IC
50
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Collector-base voltage (Emitter open)
VCBO
IC = 100 µA, IE = 0
Emitter-base cutoff current (Collector open)
IEBO
VEB = 2 V, IC = 0
hFE
VCE = 4 V, IC = 2 mA
hFE2: VCE = 4 V, IC = 100 µA
Forward current transfer ratio
hFE ratio *
∆hFE
Conditions
Min
Typ
Max
Unit
2
µA
100
350
0.6
1.5
0.1
V
15
V
hFE1: VCE = 4 V, IC = 2 mA
Th
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
VCE(sat)
fT
Cob
IC = 20 mA, IB = 4 mA
VCE = 5 V, IC = 15 mA, f = 200 MHz
VCB = 10 V, IE = 0, f = 1 MHz
0.6
1.1
1.0
1.6
GHz
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: ∆hFE = hFE2 / hFE1
Publication date: June 2007
SJC00369AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC5632G
PC Ta
IC VCE
160
IC VBE
60
120
80
40
250 µA
40
200 µA
150 µA
20
100 µA
80
Ta = 85°C
−25°C
40
50 µA
40
80
120
0
160
0
2
4
0
0
8
Collector-emitter voltage VCE (V)
VCE(sat) IC
Forward current transfer ratio hFE
10−1
Ta = 85°C
25°C
−25°C
10−2
1
VCE = 4 V
10
Collector current IC (mA)
102
160
Ta = 85°C
120
25°C
−25°C
80
40
0
1
10
Collector current IC (mA)
SJC00369AED
0.8
1.2
Cob VCB
200
IC / IB = 10
0.4
Base-emitter voltage VBE (V)
hFE IC
1
10−3
10−1
6
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
0
Ambient temperature Ta (°C)
Collector-emitter saturation voltage VCE(sat) (V)
Collector current IC (mA)
120
0
2
VCE = 4 V
25°C
IB = 300 µA
Collector current IC (mA)
Collector power dissipation PC (mW)
Ta = 25°C
102
2.5
f = 1 MHz
Ta = 25˚C
2
1.5
1
0.5
0
1
10
Collector-base voltage VCB (V)
102
This product complies with the RoHS Directive (EU 2002/95/EC).
SMini3-F2
Unit: mm
0.425 ±0.050
2.00 ±0.20
+0.05
0.30 −0.02
(5°)
2.10 ±0.10
1.25 ±0.10
3
1
2
(0.65)
+0.05
(0.65)
0.13 −0.02
(0.49)
1.30 ±0.10
0 to 0.10
0.90 ±0.10
(0.89)
(5°)
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