This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SD0601A (2SD601A)
Silicon NPN epitaxial planar type
For general amplification
Complementary to 2SB0709A (2SB709A)
Unit: mm
0.40+0.10
–0.05
■ Features
0.16+0.10
–0.06
Unit
Collector-base voltage (Emitter open)
VCBO
60
V
Collector-emitter voltage (Base open)
VCEO
50
V
Emitter-base voltage (Collector open)
VEBO
7
V
100
mA
200
mA
200
mW
150
°C
−55 to +150
°C
IC
Collector power dissipation
PC
Junction temperature
Tj
Storage temperature
Tstg
0.4±0.2
5˚
10˚
1.1+0.2
–0.1
Rating
1.1+0.3
–0.1
Symbol
0 to 0.1
Parameter
ICP
(0.65)
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2.90+0.20
–0.05
■ Absolute Maximum Ratings Ta = 25°C
Peak collector current
2.8+0.2
–0.3
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2
1
(0.95) (0.95)
1.9±0.1
Collector current
1.50+0.25
–0.05
3
• High foward current transfer ratio hFE
• Low collector to emitter saturation voltage VCE(sat)
• Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
1: Base
2: Emitter
3: Collector
Mini3-G1 Package
Marking Symbol: Z
Symbol
VCBO
IC = 10 µA, IE = 0
Conditions
Min
60
Collector-emitter voltage (Base open)
VCEO
Typ
Max
Unit
V
ue
Parameter
Collector-base voltage (Emitter open)
ce
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tin
■ Electrical Characteristics Ta = 25°C ± 3°C
IC = 2 mA, IB = 0
50
V
Emitter-base voltage (Collector open)
VEBO
IE = 10 µA, IC = 0
7
V
Collector-base cut-off current (Emitter open)
ICBO
VCB = 20 V, IE = 0
0.1
µA
ICEO
VCE = 10 V, IB= 0
100
µA
460
VCE = 10 V, IC = 2 mA
160
hFE2
VCE = 2 V, IC = 100 mA
90
VCE(sat)
IC = 100 mA, IB = 10 mA
0.1
VCB = 10 V, IE = −2 mA, f = 200 MHz
150
MHz
VCE = 10 V, IC = 1 mA, GV = 80 dB
110
mV
hFE1
en
an
Forward current transfer ratio
*
int
Collector-emitter saturation voltage
fT
Ma
Transition frequency
Noise voltage
NV
0.3
V
Rg = 100 kΩ, Function = FLAT
Collector output capacitance
(Common base, input open circuited)
VCB = 10 V, IE = 0, f = 1 MHz
Cob
3.5
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
R
S
No-rank
hFE1
160 to 260
210 to 340
290 to 460
160 to 460
Marking symbol
ZQ
ZR
ZS
Z
Product of no-rank is not classified and have no marking symbol for rank.
Note) The part number in the parenthesis shows conventional part number.
Publication date: April 2003
SJC00190BED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SD0601A
PC Ta
IC VCE
IB VBE
60
1 200
Ta = 25°C
VCE = 10 V
Ta = 25°C
IB = 160 µA
200
50
120
40
120 µA
100 µA
30
80 µA
Base current IB (µA)
Collector current IC (mA)
160
1 000
140 µA
800
600
M
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Collector power dissipation PC (mW)
240
80
10
80
120
160
Ambient temperature Ta (°C)
VCE = 10 V
6
8
VCE = 10 V
Ta = 25°C
Collector current IC (mA)
25°C
Ta = 75°C
−25°C
80
160
120
80
40
0.4
0.8
1.2
1.6
2.0
int
Ma
Ta = 75°C
25°C
300
−25°C
200
100
0
0.1
0
1
10
Collector current IC (mA)
100
200
400
600
800
0.4
0.6
1 000
VCE(sat) IC
IC / IB = 10
1
25°C
0.1
0.01
0.1
180
120
60
−25°C
1
10
SJC00190BED
100
NV IC
VCE = 10 V
GV = 80 dB
200 Function = FLAT
Ta = 25°C
160
Rg = 100 kΩ
120
80
22 kΩ
4.7 kΩ
40
Emitter current IE (mA)
Ta = 75°C
240
240
−10
1.0
Collector current IC (mA)
VCB = 10 V
Ta = 25°C
−1
0.8
10
fT I E
0
− 0.1
0.2
100
Base current IB (µA)
300
Transition frequency fT (MHz)
en
an
VCE = 10 V
500
400
0
ce
/D
isc
on
tin
hFE IC
600
0
Base-emitter voltage VBE (V)
Noise voltage NV (mV)
0
0
10
240
ue
Collector current IC (mA)
120
Base-emitter voltage VBE (V)
Forward current transfer ratio hFE
4
200
40
2
2
IC I B
160
0
0
Collector-emitter voltage VCE (V)
IC VBE
200
0
Collector-emitter saturation voltage VCE(sat) (V)
40
200
20 µA
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0
400
40 µA
40
0
60 µA
20
−100
0
10
100
Collector current IC (µA)
1 000
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
M
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(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
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(4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
Pl
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(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
