2SD0814ASL

2SD0814ASL

  • 厂商:

    NAIS(松下)

  • 封装:

    SOT-23

  • 描述:

    TRANS NPN 185V 0.05A MINI-3P

  • 数据手册
  • 价格&库存
2SD0814ASL 数据手册
This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SD0814A (2SD814A) Silicon NPN epitaxial planar type For high breakdown voltage low-frequency and low-noise amplification Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 Rating Unit VCBO 185 V Collector-emitter voltage (Base open) VCEO 185 V Emitter-base voltage (Collector open) VEBO 5 V IC ICP Collector power dissipation PC Junction temperature Tj Storage temperature Tstg 50 mA 100 mA 200 mW 150 °C −55 to +150 °C 0.4±0.2 1.1+0.3 –0.1 Symbol 0 to 0.1 Parameter 1.1+0.2 –0.1 10˚ Collector-base voltage (Emitter open) Peak collector current 5˚ di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. 1.9±0.1 2.90+0.20 –0.05 ■ Absolute Maximum Ratings Ta = 25°C Collector current 2 1 (0.95) (0.95) (0.65) • High collector-emitter voltage (Base open) VCEO • Low noise voltage NV • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 2.8+0.2 –0.3 ■ Features 1.50+0.25 –0.05 M Di ain sc te on na tin nc ue e/ d 3 1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini3-G1 Package Marking Symbol: L ue ■ Electrical Characteristics Ta = 25°C ± 3°C Symbol ce /D isc on tin Parameter Conditions Min Collector-emitter voltage (Base open) VCEO IC = 100 µA, IB = 0 185 Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 5 Collector-base cutoff current (Emitter open) ICBO VCB = 100 V, IE = 0 hFE VCE = 5 V, IC = 10 mA VCE(sat) IC = 30 mA, IB = 3 mA an Forward current transfer ratio * en Collector-emitter saturation voltage Typ Max Unit V V 90 1 µA 330  1 V VCB = 10 V, IE = −10 mA, f = 200 MHz 150 MHz Collector output capacitance (Common base, input open circuited) Cob VCB = 10 V, IE = 0, f = 1 MHz 2.3 pF Noise voltage NV VCE = 10 V, IC = 1 mA, GV = 80 dB Rg = 100 kΩ, Function = FLAT 150 mV fT Ma int Transition frequency Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank Q R S hFE 90 to 155 130 to 220 185 to 330 Note) The part number in the parenthesis shows conventional part number. Publication date: January 2003 SJC00196CED 1 This product complies with the RoHS Directive (EU 2002/95/EC). 2SD0814A PC  Ta IC  VCE Ta = 25°C 100 Collector current IC (mA) 200 160 100 IB = 2.0 mA 1.8 mA 1.6 mA 1.4 mA 1.2 mA 1.0 mA 0.8 mA 0.6 mA 80 60 VCE = 10 V 25°C 0.4 mA Ta = 75°C 80 80 120 160 1 Ta = 75°C −25°C 0.01 0.1 1 10 100 Cob  VCB en an IE = 0 f = 1 MHz Ta = 25°C Ma int 4 3 6 8 2 1 3 10 400 Ta = 75°C 300 25°C −25°C 200 100 0 0.1 1 10 Collector current IC (mA) 30 100 Collector-base voltage VCB (V) 2 12 0 SJC00196CED 100 0.4 0.8 1.2 1.6 2.0 Base-emitter voltage VBE (V) fT  I E 200 VCE = 10 V 1 0 10 500 ce /D isc on tin Collector current IC (mA) 5 4 600 Forward current transfer ratio hFE Collector-emitter saturation voltage VCE(sat) (V) 10 0.1 2 hFE  IC IC / IB = 10 25°C 0 0 Collector-emitter voltage VCE (V) VCE(sat)  IC 100 0 Transition frequency fT (MHz) 80 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. 40 40 20 ue 0 Ambient temperature Ta (°C) Collector output capacitance C (pF) (Common base, input open circuited) ob 0.2 mA 20 40 0 40 −25°C 60 M Di ain sc te on na tin nc ue e/ d 120 120 Collector current IC (mA) Collector power dissipation PC (mW) IC  VBE 120 240 VCB = 10 V Ta = 25°C 160 120 80 40 0 −1 −10 Emitter current IE (mA) −100 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. M Di ain sc te on na tin nc ue e/ d (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: – Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. – Any applications other than the standard applications intended. d pla inc ne lud se pla m d m es v ne ain ain foll htt isit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. Pl ea Ma int en an ce /D isc on tin ue (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
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