2SD10300RL

2SD10300RL

  • 厂商:

    NAIS(松下)

  • 封装:

    SOT-23

  • 描述:

    TRANS NPN 40V 0.05A MINI-3

  • 数据手册
  • 价格&库存
2SD10300RL 数据手册
This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SD1030 Silicon NPN epitaxial planar type For low-frequency amplification Unit: mm 0.40+0.10 –0.05 ■ Features 0.16+0.10 –0.06 0.4±0.2 5˚ 2.8+0.2 –0.3 2 1 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. (0.95) (0.95) (0.65) • High forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE(sat) • High emitter-base voltage (Collector open) VEBO • Low noise voltage NV • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing 1.50+0.25 –0.05 M Di ain sc te on na tin nc ue e/ d 3 1.9±0.1 2.90+0.20 –0.05 Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 50 V Collector-emitter voltage (Base open) VCEO 40 V Emitter-base voltage (Collector open) VEBO Collector current IC Peak collector current ICP Collector power dissipation PC Junction temperature Tj Storage temperature Tstg 15 V 50 mA 100 mA 200 mW 150 °C −55 to +150 °C 1.1+0.2 –0.1 Parameter 0 to 0.1 ■ Absolute Maximum Ratings Ta = 25°C 1.1+0.3 –0.1 10˚ 1 : Base 2 : Emitter 3 : Collector EIAJ : SC-59 Mini3-G1 Package Marking symbol: 1Z Parameter ce /D isc on tin ue ■ Electrical Characteristics Ta = 25°C ± 3°C Symbol Conditions Min Typ Max Unit VCBO IC = 10 µA, IE = 0 Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0 40 V Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 15 V ICBO VCB = 20 V, IE = 0 0.1 µA ICEO VCE = 20 V, IB = 0 1 µA hFE VCE = 10 V, IC = 2 mA 2 000  VCE(sat) IC = 10 mA, IB = 1 mA 0.05 0.2 V VCB = 10 V, IE = −2 mA, f = 200 MHz 200 an Collector-base voltage (Emitter open) en Collector-base cutoff current (Emitter open) int Collector-emitter cutoff current (Base open) Ma Forward current transfer ratio * Collector-emitter saturation voltage Transition frequency fT 50 V 400 MHz Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank R S T hFE 400 to 800 600 to 1 200 1 000 to 2 000 Publication date: January 2003 SJC00205BED 1 This product complies with the RoHS Directive (EU 2002/95/EC). 2SD1030 PC  Ta IC  VCE 240 IC  VBE 160 120 VCE = 10 V 200 25°C 160 120 IB = 100 µA 90 µA 80 µA 70 µA 60 µA 50 µA 100 80 Collector current IC (mA) Collector current IC (mA) 100 120 Ta = 75°C 80 40 µA 30 µA 40 20 µA 40 20 60 80 120 160 Ambient temperature Ta (°C) 1 Ta = 75°C −25°C 0.01 0.1 1 10 100 en an IE = 0 f = 1 MHz Ta = 25°C int Ma Collector output capacitance C (pF) (Common base, input open circuited) ob Cob  VCB 6 6 8 4 1 1200 Ta = 75°C 900 25°C −25°C 600 0 10 0.4 0.8 1.2 1.6 2.0 Base-emitter voltage VBE (V) fT  I E 250 VCB = 10 V Ta = 25°C 200 150 100 50 300 0 0.1 1 10 Collector current IC (mA) 100 Collector-base voltage VCB (V) 2 0 12 VCE = 10 V 2 0 10 1500 ce /D isc on tin Collector current IC (mA) 8 4 1800 Forward current transfer ratio hFE 10 25°C 2 hFE  IC IC / IB = 10 0.1 0 Collector-emitter voltage VCE (V) VCE(sat)  IC 100 0 Transition frequency fT (MHz) 40 20 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. 0 40 10 µA ue 0 Collector-emitter saturation voltage VCE(sat) (V) 60 −25°C 80 M Di ain sc te on na tin nc ue e/ d Collector power dissipation PC (mW) Ta = 25°C 140 SJC00205BED 100 0 − 0.1 −1 −10 Emitter current IE (mA) −100 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. M Di ain sc te on na tin nc ue e/ d (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: – Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. – Any applications other than the standard applications intended. d pla inc ne lud se pla m d m es v ne ain ain foll htt isit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. Pl ea Ma int en an ce /D isc on tin ue (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2SD10300RL 价格&库存

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