This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SD1328
Silicon NPN epitaxial planar type
For low-voltage output amplification
For muting
For DC-DC converter
Unit: mm
0.40+0.10
–0.05
0.16+0.10
–0.06
0.4±0.2
5˚
2
1
di
p
Pl
lan nclu
ea
e
se
pla m d m des
ne ain ain foll
htt visit
d te t o
p:/ fo
/w llo dis disc nan enan wing
ww wi co on ce c fo
.se ng ntin tin ty e ty ur
mi UR ue ued pe pe Pro
co L a d t ty
du
n.p bo yp pe
ct
life
an ut e
d
as lat
cy
on es
cle
ic. t in
sta
co fo
ge
.jp rm
.
/en at
i
o
/
n.
(0.95) (0.95)
(0.65)
• Low collector-emitter saturation voltage VCE(sat)
• Low ON resistance Ron
• High foward current transfer ratio hFE
2.8+0.2
–0.3
■ Features
1.50+0.25
–0.05
M
Di ain
sc te
on na
tin nc
ue e/
d
3
1.9±0.1
2.90+0.20
–0.05
■ Absolute Maximum Ratings Ta = 25°C
Rating
Unit
VCBO
25
V
Collector-emitter voltage (Base open)
VCEO
20
V
Emitter-base voltage (Collector open)
VEBO
12
V
0.5
A
1
A
200
mW
150
°C
−55 to +150
°C
Collector current
IC
Peak collector current
ICP
Collector power dissipation
PC
Junction temperature
Tj
Storage temperature
Tstg
1.1+0.2
–0.1
Symbol
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
0 to 0.1
Parameter
Collector-base voltage (Emitter open)
1.1+0.3
–0.1
10˚
Marking Symbol: 1D
Parameter
Symbol
Collector-base voltage (Emitter open)
VCBO
ce
/D
isc
on
tin
■ Electrical Characteristics Ta = 25°C ± 3°C
Conditions
Min
Typ
Max
Unit
25
V
VCEO
IC = 1 mA, IB = 0
20
V
Emitter-base voltage (Collector open)
VEBO
IE = 10 µA, IC = 0
12
Collector-base cutoff current (Emitter open)
ICBO
VCB = 25 V, IE = 0
ue
IC = 10 µA, IE = 0
Collector-emitter voltage (Base open)
hFE
VCE = 2 V, IC = 0.5 A
VCE(sat)
IC = 0.5 A, IB = 20 mA
VCE(sat)
IC = 0.5 A, IB = 50 mA
an
Forward current transfer ratio *1,2
en
Collector-emitter saturation voltage *1
int
Base-emitter saturation voltage
*1
fT
Ma
Transition frequency
Collector output capacitance
ON resistance
Cob
*3
V
200
0.13
100
nA
800
0.40
V
1.2
V
VCB = 10 V, IE = −50 mA, f = 200 MHz
200
MHz
VCB = 10 V, IE = 0, f = 1 MHz
10
pF
1.0
Ω
RON
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
*3: Ron Measuremet circuit
Rank
R
S
T
No-rank
hFE
200 to 350
300 to 500
400 to 800
200 to 800
Marking symbol
1DR
1DS
1DT
1D
1 kΩ
IB = 1 mA
VB
Product of no-rank is not classified and have no marking symbol for rank.
Ron =
Publication date: February 2003
SJC00216BED
f = 1 kHz
V = 0.3 V
VV
VA
VB
× 1 000 (Ω)
VA − VB
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SD1328
IC VCE
Ta = 25°C
IB = 4.0 mA
200
3.5 mA
Collector current IC (A)
1.0
160
120
3.0 mA
0.8
2.5 mA
2.0 mA
0.6
1.5 mA
100
IC / IB = 25
10
1
M
Di ain
sc te
on na
tin nc
ue e/
d
Collector power dissipation PC (mW)
VCE(sat) IC
1.2
Collector-emitter saturation voltage VCE(sat) (V)
PC Ta
240
80
0
40
80
120
160
0
0
1
2
3
5
6
VCE = 2 V
0.1
0.1
1
10
Cob VCB
IE = 0
Ta = 25°C
f = 1 MHz
en
an
24
int
20
Ma
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
Ta = 75°C
600
16
12
25°C
−25°C
400
0
0.01
0.1
4
1
10
1
Collector current IC (A)
8
0
1
10
fT I E
VCB = 10 V
Ta = 25°C
300
200
100
200
ce
/D
isc
on
tin
Collector current IC (A)
Transition frequency fT (MHz)
Forward current transfer ratio hFE
75°C
800
ue
25°C
Ta = −25°C
0.1
Collector current IC (A)
400
1 000
1
0.01
0.01
hFE IC
10
0.01
0.01
100
Collector-base voltage VCB (V)
2
4
1 200
IC / IB = 10
−25°C
0.1
Collector-emitter voltage VCE (V)
VBE(sat) IC
100
Ta = 75°C
25°C
di
p
Pl
lan nclu
ea
e
se
pla m d m des
ne ain ain foll
htt visit
d te t o
p:/ fo
/w llo dis disc nan enan wing
ww wi co on ce c fo
.se ng ntin tin ty e ty ur
mi UR ue ued pe pe Pro
co L a d t ty
du
n.p bo yp pe
ct
life
an ut e
d
as lat
cy
on es
cle
ic. t in
sta
co fo
ge
.jp rm
.
/en at
i
o
/
n.
0.2
Ambient temperature Ta (°C)
Base-emitter saturation voltage VBE(sat) (V)
1.0 mA
0.5 mA
40
0
0.4
SJC00216BED
10
0
−1
−10
Emitter current IE (mA)
−100
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
M
Di ain
sc te
on na
tin nc
ue e/
d
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
d
pla inc
ne lud
se
pla m d m es
v
ne ain ain foll
htt isit
d te t o
p:/ fo
/w llo dis disc nan enan wing
ww wi co on ce c fo
.se ng ntin tin ty e ty ur
mi UR ue ued pe pe Pro
co L a d t ty
du
n.p bo yp pe
ct
life
an ut e
d
as lat
cy
on es
cle
ic. t in
sta
co fo
ge
.jp rm
.
/en at
i
o
/
n.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
Pl
ea
Ma
int
en
an
ce
/D
isc
on
tin
ue
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
