2SD1820GRL

This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SD1820 Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1219  Package  Low collector-emitter saturation voltage VCE(sat)  S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing.  Code SMini3-G1 M Di ain sc te on na tin nc ue e/ d  Features Parameter Symbol Collector-base voltage (Emitter open) VCBO Collector-emitter voltage (Base open) VCEO Emitter-base voltage (Collector open) VEBO Collector current IC Peak collector current ICP Collector power dissipation PC Junction temperature Tj Storage temperature Tstg  Electrical Characteristics Ta = 25°C±3°C Parameter di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n.  Absolute Maximum Ratings Ta = 25°C  Pin Name 1. Base 2. Emitter 3. Collector Rating Unit 30 V 25 V 5 V 500 mA 1 A 150 mW 150 °C –55 to +150 °C Symbol  Marking Symbol: W Conditions Min Typ Max Unit VCBO IC = 10 mA, IE = 0 30 V Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 25 V VEBO IE = 10 mA, IC = 0 5 V ICBO VCB = 20 V, IE = 0 on tin ue Collector-base voltage (Emitter open) isc Emitter-base voltage (Collector open) an Forward current transfer ratio *1 ce /D Collector-base cutoff current (Emitter open) hFE1 *2 en hFE2 Collector-emitter saturation voltage *1 Ma int VCE(sat) Transition frequency fT Collector output capacitance (Common base, input open circuited) Cob VCE = 10 V, IC = 150 mA 85 VCE = 10 V, IC = 500 mA 40 0.1 340 IC = 300 mA, IB = 30 mA 0.35 VCB = 10 V, IE = –50 mA, f = 200 MHz 200 VCB = 10 V, IE = 0, f = 1 MHz 6 0.60 15 mA  V MHz pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Rank classification Rank Q R S No-rank hFE1 85 to 170 120 to 240 170 to 340 85 to 340 Marking symbol WQ WR WS  Product of no-rank is not classified and have no marking symbol for rank. Publication date : October 2008 SJC00227DED 1 This product complies with the RoHS Directive (EU 2002/95/EC). 2SD1820 PC  Ta IC  VCE Collector current IC (mA) 160 120 80 IB = 10 mA 9 mA 8 mA 7 mA 6 mA 5 mA 4 mA 600 500 400 3 mA 300 VCE = 10 V Ta = 25°C 700 2 mA 200 1 mA Collector current IC (mA) 700 200 800 Ta = 25°C 600 500 400 300 200 M Di ain sc te on na tin nc ue e/ d Collector power dissipation PC (mW) IC  IB 800 240 40 120 IC / IB = 10 1 Ta = 75°C 25°C −25°C 0.1 1 10 160 int en an 200 120 80 40 0 −1 −10 Emitter current IE (mA) 2 16 0 20 0 2 4 −100 6 8 250 10 200 1 Ta = −25°C 25°C 150 10 Base current IB (mA) hFE  IC 300 IC / IB = 10 VCE = 10 V Ta = 75°C 25°C −25°C 75°C 100 0.1 50 0.01 0.01 on tin ce /D VCB = 10 V Ta = 25°C Ma Transition frequency fT (MHz) isc fT  IE 12 100 ue Collector current IC (A) 240 8 VBE(sat)  IC 10 0.01 0.01 4 0.1 1 0 0.01 10 Collector current IC (A) Cob  VCB 12 IE = 0 f = 1 MHz Ta = 25°C 10 80 6 60 4 40 2 20 1 10 100 Collector-base voltage VCB (V) SJC00227DED 0 1 1 10 VCER  RBE IC = 2 mA Ta = 25°C 100 8 0 0.1 Collector current IC (A) 120 CER Collector-emitter saturation voltage VCE(sat) (V) VCE(sat)  IC 0.1 0 Collector-emitter voltage VCE (V) Ambient temperature Ta (°C) 100 0 160 FE 80 100 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du y n Collector-emitter voltage V b cht p Forward current transfer ratio (V) p .pa ou e ed (Resistor between B and E) life na t la cy so te cle nic st sta .co info ge .jp rm . /en at i o / n. 40 Base-emitter saturation voltage VBE(sat) (V) 0 Collector output capacitance (Common base, input open circuited) Cob (pF) 0 100 10 100 1000 Base-emitter resistance RBE (kΩ) an en ue on tin isc ce /D ±0.10 3 1 2 (0.65) (0.65) 1.3 ±0.1 2.0 ±0.2 10 ° +0.2 −0.1 ±0.1 (0.425) SMini3-G1 0.3 −0.0 +0.1 SJC00227DED ±0.1 ±0.1 di p Pl lan nclu ea ed de s p e 1.25 0 to 0.1 0.9 lan ma ma s fo v i htt sit 2.1 i p:/ fo 0.9d ed d nten inten llow /w llo is isc an an ing ww wi co on ce c fo .se ng ntin tin ty e ty ur 5° mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at ion 0.2 / . int Ma M Di ain sc te on na tin nc ue e/ d This product complies with the RoHS Directive (EU 2002/95/EC). 2SD1820 Unit: mm 0.15 −0.05 +0.10 3 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. M Di ain sc te on na tin nc ue e/ d (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: – Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. – Any applications other than the standard applications intended. d pla inc ne lud se pla m d m es ne ain ain foll htt visit d d te te ow p:/ fo d /w llo is isc nan nan ing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i / on . (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. 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