2SD1938FTL

2SD1938FTL

  • 厂商:

    NAIS(松下)

  • 封装:

    SOT-23

  • 描述:

    TRANS NPN 20V 0.3A MINI

  • 数据手册
  • 价格&库存
2SD1938FTL 数据手册
This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SD1938(F) Silicon NPN epitaxial planar type For low-voltage output amplification For muting For DC-DC converter Unit: mm 0.40+0.10 –0.05 1.9±0.1 Collector-base voltage (Emitter open) VCBO 50 V Collector-emitter voltage (Base open) VCEO 20 V Emitter-base voltage (Collector open) VEBO Collector power dissipation PC Junction temperature Tj Storage temperature Tstg 25 V 300 mA 500 mA 200 mW 150 °C −55 to +150 °C 1.1+0.3 –0.1 Unit 1.1+0.2 –0.1 Rating 0.4±0.2 1: Base 2: Emitter 3: Collector EIAJ: SC-59 JEDEC: SOT-346 Mini3-G1 Package 0 to 0.1 Symbol ICP 5˚ 2.90+0.20 –0.05 10˚ Parameter Peak collector current 2.8+0.2 –0.3 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. (0.95) (0.95) ■ Absolute Maximum Ratings Ta = 25°C IC 2 1 (0.65) • Low ON resistance Ron • High forward current transfer ratio hFE • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing 1.50+0.25 –0.05 M Di ain sc te on na tin nc ue e/ d 3 ■ Features Collector current 0.16+0.10 –0.06 Marking symbol: 3W ■ Electrical Characteristics Ta = 25°C ± 3°C Symbol VCEO IC = 1 mA, IB = 0 ce /D isc on tin ue Parameter Collector-emitter voltage (Base open) Conditions VBE VCE = 2 V, IC = 4 mA Collector-base cutoff current (Emitter open) ICBO VCB = 50 V, IE = 0 Emitter-base cutoff current (Collector open) IEBO VEB = 25 V, IC = 0 Forward current transfer ratio *1 hFE VCE = 2 V, IC = 4 mA VCE(sat) IC = 30 mA, IB = 3 mA en an Base-emitter voltage int Collector-emitter saturation voltage Collector output capacitance (Common base, input open circuited) Cob ON resistance *2 Ron Typ Max 20 Unit V 0.6 V 500 0.1 µA 0.1 µA 2 500  0.1 VCB = 6 V, IE = −4 mA, f = 200 MHz fT Ma Transition frequency Min 80 V MHz VCB = 10 V, IE = 0, f = 1 MHz 7 pF Ω 1.0 Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Rank classification *2: Ron Measuremet circuit Rank S T No rank hFE 500 to 1 500 800 to 2 500 500 to 2 500 1 kΩ IB = 1 mA f = 1 kHz V = 0.3 V Product of no-rank classification is not marked. VB Ron = Publication date: August 2004 SJC00313AED VV VA VB × 1 000 (Ω) VA − VB 1 This product complies with the RoHS Directive (EU 2002/95/EC). 2SD1938(F) PC  Ta IC  VCE IC  VBE 18 250 100 VCE = 2 V 90 150 IB = 10 µA 14 80 Collector current IC (mA) Collector current IC (mA) 200 12 8 µA 10 8 6 µA 70 Ta = 85°C 60 100 25°C 40 60 80 100 120 140 160 2 µA 10 0 2 4 6 8 10 Forward current transfer ratio hFE 1 400 Ta = 85°C 1 200 Ta = 85°C 25°C 1 000 −25°C 0.01 25°C 800 −25°C 600 400 200 100 ce /D isc on tin an en int Ma 0 0.1 ue 0.001 Collector current IC (mA) 0.2 0.4 0.6 0.8 1 10 100 Collector current IC (mA) SJC00313AED 1 000 1.0 1.2 1.4 Base-emitter voltage VBE (V) Cob  VCB 100 VCE = 2 V 10 0 hFE  IC 1 600 IC / IB = 10 1 0 12 Collector-emitter voltage VCE (V) VCE(sat)  IC 0.1 0 Collector output capacitance C (pF) (Common base, input open circuited) ob 20 30 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. 0 40 20 2 Ambient temperature Ta (°C) 2 4 µA 4 50 0 Collector-emitter saturation voltage VCE(sat) (V) 6 −25°C 50 M Di ain sc te on na tin nc ue e/ d Collector power dissipation PC (mW) Ta = 25°C 16 f = 1 MHz Ta = 25°C 10 1 0 5 10 15 20 25 30 35 Collector-base voltage VCB (V) 40 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. M Di ain sc te on na tin nc ue e/ d (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: – Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. – Any applications other than the standard applications intended. d pla inc ne lud se pla m d m es v ne ain ain foll htt isit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. Pl ea Ma int en an ce /D isc on tin ue (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
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