This product complies with the RoHS Directive (EU 2002/95/EC).
Power Transistors
2SD2064
Silicon NPN triple diffusion planar type
Unit: mm
For high power amplification
Complementary to 2SB1371
5.0±0.2
(0.7)
15.0±0.3
(3.2)
21.0±0.5
16.2±0.5
1
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
120
V
Collector-emitter voltage (Base open)
VCEO
120
V
Emitter-base voltage (Collector open)
VEBO
5
V
IC
Peak collector current
ICP
Collector power dissipation
PC
Ta = 25°C
2.0±0.1
0.6±0.2
1.1±0.1
5.45±0.3
10.9±0.5
■ Absolute Maximum Ratings TC = 25°C
Collector current
2.0±0.2
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• Excellent collector current IC characteristics of forward current
transfer ratio hFE
• Wide safe operation area
• High transition frequency fT
• Full-pcak package which can be installed to the heat sink with one
screw
φ 3.2±0.1
(3.5)
Solder Dip
■ Features
15.0±0.2
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11.0±0.2
6
A
10
A
70
W
2
1: Base
2: Collector
3: Emitter
EIAJ: SC-92
TOP-3F-A1 Package
3
3
Tj
Storage temperature
Tstg
150
°C
−55 to +150
°C
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Junction temperature
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
VBE
VCE = 5 V, IC = 4 A
1.8
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 120 V, IE = 0
50
µA
Emitter-base cutoff current (Collector open)
IEBO
VEB = 3 V, IC = 0
50
µA
Forward current transfer ratio
hFE1
VCE = 5 V, IC = 20 mA
20
Ma
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Base-emitter voltage
VCE = 5 V, IC = 1 A
60
hFE3
VCE = 5 V, IC = 4 A
20
VCE(sat)
IC = 4 A, IB = 0.4 A
hFE2
Collector-emitter saturation voltage
Transition frequency
*
fT
Collector output capacitance
(Common base, input open circuited)
Cob
200
2.0
V
VCE = 5 V, IC = 0.5 A, f = 1 MHz
20
MHz
VCB = 10 V, IE = 0, f = 1 MHz
80
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
S
P
hFE2
60 to 120
80 to 160
100 to 200
Publication date: September 2003
SJD00243BED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SD2064
PC Ta
(1)
Collector power dissipation PC (W)
IC VCE
VCE=5V
TC=25˚C
10
Collector current IC (A)
60
IC VBE
12
12
(1)TC=Ta
(2)With a 100×100×2mm
Al heat sink
(3)Without heat sink
(PC=3W)
300mA
8
200mA
150mA
6
100mA
20
4
50mA
(2)
100˚C
8
6
10mA
120
160
Ambient temperature Ta (°C)
TC=100˚C
1
25˚C
–25˚C
0.1
1
10
Cob VCB
TC=100˚C
100
–25˚C
25˚C
10
1
0.01
Collector current IC (A)
int
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an
IE=0
f=1MHz
TC=25˚C
Ma
100
10
0.1
10
Collector-base voltage VCB (V)
100
1
10
0
Non repetitive pulse
TC=25˚C
ICP
10
IC
t=10ms
t=100ms
1
DC
0.1
1
10
100
1 000
Collector-emitter voltage VCE (V)
SJD00243BED
1
2
3
4
Base-emitter voltage VBE (V)
fT I C
1 000
VCE=5V
f=1MHz
TC=25˚C
100
10
1
0.01
0.1
1
Collector current IC (A)
Collector current IC (A)
Safe operation area
0.01
1
12
VCE=5V
100
1 000
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
8
1 000
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Collector current IC (A)
2
4
Transition frequency fT (MHz)
Collector-emitter saturation voltage VCE(sat) (V)
10
1
0
0
hFE IC
IC/IB=10
0.1
0
Collector-emitter voltage VCE (V)
VCE(sat) IC
100
0.01
0.01
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80
Forward current transfer ratio hFE
40
ue
0
4
2
2
(3)
0
25˚C
TC=–25˚C
M
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40
10
IB=500mA
400mA
Collector current IC (A)
80
10
10−3
10−2
10−1
Time t (s)
1
10
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10−1
10−4
Ma
Thermal resistance Rth (°C/W)
M
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This product complies with the RoHS Directive (EU 2002/95/EC).
2SD2064
104
Rth t
Note: Rth was measured at Ta=25˚C and under natural convection.
(1)PT=10V×0.3A(3W) and without heat sink
(2)PT=10V×1.0A(10W) and with a 100×100×2mm Al heat sink
103
102
(1)
10
(2)
1
102
103
SJD00243BED
104
3
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
M
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(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
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(4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
Pl
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(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
