This product complies with the RoHS Directive (EU 2002/95/EC).
Power Transistors
2SD2133
Silicon NPN epitaxial planar type
For low-frequency power amplification driver
Unit: mm
• Low collector-emitter saturation voltage VCE(sat)
2.5±0.1
0.65±0.1
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
60
V
Collector-emitter voltage (Base open)
VCEO
50
V
Emitter-base voltage (Collector open)
VEBO
5
V
1
A
1.5
A
1.5
W
150
°C
−55 to +150
°C
IC
Peak collector current
ICP
Collector power dissipation
PC
Junction temperature
Tj
Storage temperature
Tstg
0.8 C
0.7±0.1
1.15±0.2
0.8 C
1
2
2.5±0.2
3
0.7±0.1
1.15±0.2
0.4±0.1
0.5±0.1
2.05±0.2
Symbol
16.0±1.0
Parameter
Collector current
0.85±0.1
1.0±0.1 0.8 C
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■ Absolute Maximum Ratings TC = 25°C
90˚
10.8±0.2
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■ Features
4.5±0.2
3.8±0.2
7.5±0.2
2.5±0.2
1: Emitter
2: Collector
3: Base
MT-3-A1 Package
■ Electrical Characteristics TC = 25°C ± 3°C
Symbol
VCBO
IC = 10 µA, IE = 0
60
V
Collector-emitter voltage (Base open)
VCEO
IC = 2 mA, IB = 0
50
V
Emitter-base voltage (Collector open)
VEBO
IE = 10 µA, IC = 0
5
V
ICBO
VCB = 20 V, IE = 0
ce
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Parameter
Collector-base voltage (Emitter open)
Collector-base cutoff current (Emitter open)
hFE1 *1, 2
Forward current transfer ratio
hFE2
*1
en
an
hFE3
int
Collector-emitter saturation voltage
Ma
Base-emitter saturation voltage
Transition frequency
Min
VCE = 10 V, IC = 0.5 A
85
VCE = 5 V, IC = 1 A
50
VCE = 10 V, IC = 1 mA
35
Typ
Max
Unit
0.1
µA
340
100
VCE(sat)
IC = 500 mA, IB = 50 mA
0.2
0.4
V
VBE(sat)
IC = 500 mA, IB = 50 mA
0.85
1.20
V
VCB = 10 V, IE = −50 mA, f = 200 MHz
200
MHz
VCB = 10 V, IE = 0, f = 1 MHz
11
pF
fT
Collector output capacitance
(Common base, input open circuited)
Conditions
Cob
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
Q
R
S
hFE1
85 to 170
120 to 240
170 to 340
Publication date: May 2003
SJD00244BED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SD2133
PC Ta
IC VCE
Ta=25˚C
Without heat sink
IB=10mA 9mA
1.0
8mA
1.6
VCE=10V
Ta=25˚C
1.0
7mA
1.2
0.8
Collector current IC (A)
Collector current IC (A)
6mA
5mA
0.8
4mA
0.6
3mA
0.8
0.6
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Collector power dissipation PC (W)
IC I B
1.2
1.2
2.0
0.4
120
160
10−1
Ta=75˚C
Ta=25˚C
Ta=–25˚C
10−2
1 000
80
40
0
−1
12
10
Ta=–25˚C
1
−10
Emitter current IE (A)
−100
Ta=25˚C
Ta=75˚C
0.1
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
an
en
int
120
Ma
Transition frequency fT (MHz)
160
10
0
2
1
10
100
6
8
hFE IC
200
Ta=75˚C
Ta=25˚C
150
Ta=–25˚C
100
50
0
1 000
VCE=10V
1
10
100
IE=0
f=1MHz
Ta=25˚C
20
15
10
5
10
Collector-base voltage VCB (V)
SJD00244BED
1 000
Collector current IC (mA)
VCER RBE
100
1
12
250
Cob VCB
25
10
300
Collector current IC (mA)
30
0
4
Base current IB (mA)
IC/IB=10
ce
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isc
on
tin
Collector current IC (mA)
VCB=10V
f=200MHz
TC=25˚C
8
100
0.01
100
fT I E
6
Forward current transfer ratio hFE
1
200
4
VBE(sat) IC
IC/IB=10
10
2
ue
Collector-emitter saturation voltage VCE(sat) (V)
VCE(sat) IC
1
0
0
Collector-emitter voltage VCE (V)
Ambient temperature Ta (°C)
10
0.2
1mA
100
Collector-emitter voltage
(V)
(Resistor between B and E) VCER
80
Base-emitter saturation voltage VBE(sat) (V)
40
0.4
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0
0
10−3
2mA
0.2
0
2
0.4
IC=10mA
TC=25˚C
80
60
40
20
0
0.1
1
10
100
Base-emitter resistance RBE (kΩ)
102
10
Collector current IC (A)
103
40
80
10−3
120
10−2
160
10−1
10−3
0.1
Ambient temperature Ta (°C)
Collector-emitter voltage VCE (V)
104
Rth t
Without heat sink
103
102
10
1
Time t (s)
1
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ICBO (Ta)
ICBO (Ta = 25°C)
104
ue
ce
/D
isc
on
tin
an
10−1
10−4
en
0
int
1
Ma
Thermal resistance Rth (°C/W)
M
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This product complies with the RoHS Directive (EU 2002/95/EC).
2SD2133
ICBO Ta
VCE=10V
10
Safe operation area
1
10
Single pulse
TC=25˚C
ICP
IC
t=10ms
10−1
DC
10−2
1
102
10
103
SJD00244BED
100
104
3
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
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(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
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(4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
Pl
ea
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int
en
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isc
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(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
