This product complies with the RoHS Directive (EU 2002/95/EC).
Power Transistors
2SD2138A
Silicon NPN triple diffusion planar type darlington
For power amplification
Complementary to 2SB1418A
Package
High forward current transfer ratio hFE which has satisfactory linearity.
Allowing supply with the radial taping
Code
MT-4-A1
M
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Features
Absolute Maximum Ratings TC = 25°C
Symbol
Collector-base voltage (Emitter open)
VCBO
Collector-emitter voltage (Base open)
VCEO
Emitter-base voltage (Collector open)
VEBO
Collector current
IC
Peak collector current
ICP
Collector power dissipation
Junction temperature
Tj
Storage temperature
Tstg
80
V
80
V
5
V
2
A
4
A
Internal Connection
C
B
W
2.0
Electrical Characteristics TC = 25°C±3°C
Parameter
Unit
15
PC
TC = 25°C
Rating
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Parameter
Pin Name
1. Base
2. Collector
3. Emitter
150
°C
–55 to +150
°C
Symbol
Conditions
Min
E
Typ
Max
VCEO
IC = 30 mA, IB = 0
Base-emitter voltage
VBE
VCE = 4 V, IC = 2 A
2.8
V
VCB = 80 V, IE = 0
100
mA
VCE = 40 V, IB = 0
100
mA
VEB = 5 V, IC = 0
100
mA
on
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Collector-emitter voltage (Base open)
ICBO
Collector-emitter cutoff current (Base open)
ICEO
Emitter-base cutoff current (Collector open)
IEBO
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isc
Collector-base cutoff current (Emitter open)
en
hFE1
Ma
int
Forward current transfer ratio
Collector-emitter saturation voltage
80
Unit
VCE = 4 V, IC = 1 A
1 000
hFE2 *
VCE = 4 V, IC = 2 A
2 000
VCE(sat)
IC = 2 A, IB = 8 mA
Transition frequency
fT
Turn-on time
ton
Turn-off time
toff
10 000
2.5
V
V
VCE = 10 V, IC = 0.5 A, f = 1 MHz
20
MHz
IC = 2 A, IB1 = 8 mA, IB2 = –8 mA,
VCC = 50 V
0.4
ms
4
ms
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
P
hFE2
2 000 to 5 000
4 000 to 10 000
Publication date : October 2008
SJD00248CED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SD2138A
2SD2138_PC-Ta
2SD2138_IC-VCE
PC Ta
IC VCE
VCE(sat) IC
6
(1)TC = Ta
(2)Without heat sink
(PC = 2.0 W)
TC = 25°C
5
IB = 2 mA
Collector current IC (A)
15
Collector-emitter saturation voltage VCE(sat) (V)
Base-emitter voltage PC (W)
20
2SD2138_VCE(sat)-IC
(1)
10
3
1.8 mA
1.6 mA
1.4 mA
1.2 mA
1.0 mA
0.8 mA
0.6 mA
0.4 mA
0.2 mA
2
IC/IB = 250
10
1
25°C
1
(2)
40
80
120
2SD2138_IC-VBE
VCE = 4 V
Collector current IC (A)
–25°C
4
3
2
1
1
2
3
4
ce
/D
1
DC
t = 10 ms
0.1
0.01
1
10
100
1 000
Collector-emitter voltage VCE (V)
2
104
0.1
1
10
Collector current IC (A)
2SD2138_Cob-VCB
IE = 0
f = 1 MHz
TC = 25°C
100
–25°C
103
Cob VCB
1000
25°C
102
0.01
0.1
10
1
1
10
1
Collector current IC (A)
10
100
Collector-base voltage VCB (V)
2SD2138_Rth-t
Rth t
104
Thermal resistance Rth (°C/W)
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t =1 ms
IC
Ma
Collector current IC (A)
Non repetitive pulse
TC = 25°C
ICP
0.01
0.01
VCE = 4 V
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Safe operation area
isc
2SD2138_安全動作領域 順
10
12
TC = 100°C
ue
Base-emitter voltage VBE (V)
100
105
Forward current transfer ratio hFE
25°C
0
8
hFE IC
6
0
4
2SD2138_hFE-IC
IC VBE
TC = 100°C
0
Collector-emitter voltage VCE (V)
Ambient temperature Ta (°C)
5
0
160
ob
0
TC = 100°C
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c
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output capacitance
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–25°C
0.1
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5
4
100
Note: Rth was measured at Ta = 25°C and under natural convection.
(1)Without heat sink
(2)With a 50 mm × 50 mm × 2 mm Al heat sink
103
102
(1)
(2)
10
1
10−1
10−4
10−3
10−2
10−1
1
Time t (s)
SJD00248CED
10
102
103
104
int
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2.5 ±0.2
ue
on
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/D
1.2 ±0.1
1.48 ±0.2
0.65 ±0.1
0.65 ±0.1
0.35 ±0.1
1.05 ±0.1
0.55 ±0.1
1
2
3
±0.1
13.0 ±0.2
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Solder Dip
18.0 ±0.5
4.2 ±0.2
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This product complies with the RoHS Directive (EU 2002/95/EC).
2SD2138A
MT-4-A1
Unit: mm
10.0 ±0.2
5.0 ±0.1
1.0 ±0.2
SJD00248CED
C1.0
2.25 ±0.2
0.55 ±0.1
2.5 ±0.2
3
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any
other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any
other company which may arise as a result of the use of technical information described in this book.
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(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
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.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company.
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20080805
