2SD225900A

2SD225900A

  • 厂商:

    NAIS(松下)

  • 封装:

    SIP3

  • 描述:

    2SD225900A

  • 数据手册
  • 价格&库存
2SD225900A 数据手册
This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SD2259 Silicon NPN epitaxial planar type For low-frequency amplification Unit: mm 2.5±0.1 (0.8) ■ Features • High forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE(sat) • Allowing supply with the radial taping di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. 14.5±0.5 (1.0) 0.65 max. ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 20 V Collector-emitter voltage (Base open) VCEO 20 V Emitter-base voltage (Collector open) VEBO 15 V 0.7 A 1.5 A Collector current IC Peak collector current ICP Collector power dissipation * PC Junction temperature Tj Storage temperature Tstg (0.5) M Di ain sc te on na tin nc ue e/ d 0.7 (1.0) (0.2) 4.5±0.1 6.9±0.1 4.0 1 W 150 °C −55 to +150 °C 0.45+0.10 –0.05 2.5±0.5 1 1.05±0.05 0.45+0.10 –0.05 2.5±0.5 2 1: Emitter 2: Collector 3: Base MT-2-A1 Package 3 cm2 Note) *: Printed circuit board: Copper foil area of 1 or more, and the board thickness of 1.7 mm for the collector portion ue ■ Electrical Characteristics Ta = 25°C ± 3°C Symbol ce /D isc on tin Parameter Conditions Min Typ Max Unit VCBO IC = 10 µA, IE = 0 20 V Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0 20 V Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 15 Collector-base cutoff current (Emitter open) ICBO VCB = 15 V, IE = 0 Collector-emitter cutoff current (Base open) ICEO VCE = 15 V, IB = 0 Forward current transfer ratio * hFE VCE = 10 V, IC = 150 mA VCE(sat) IC = 500 mA, IB = 50 mA Ma int en an Collector-base voltage (Emitter open) Collector-emitter saturation voltage * Transition frequency Collector output capacitance (Common base, input open circuited) fT Cob V 1 000 0.15 VCB = 20 V, IE = −20 mA, f = 200 MHz 55 VCB = 10 V, IE = 0, f = 1 MHz 10 1 µA 10 µA 2 500  0.40 V MHz 15 pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Pulse measurement Publication date: January 2003 SJC00254BED 1 This product complies with the RoHS Directive (EU 2002/95/EC). 2SD2259 PC  Ta IC  VCE 1.0 IC  VBE 200 Copper plate at the collector is more than 1 cm2 in area, 1.7 mm in thickness Ta = 25°C Collector current IC (mA) IB = 100 µA 90 µA 80 µA 120 70 µA 60 µA 80 1.6 25°C Ta = 75°C 0.4 50 µA 40 µA 30 µA 40 0.2 −25°C 1.2 M Di ain sc te on na tin nc ue e/ d 0.6 VCE = 10 V 2.0 160 0.8 2.4 Collector current IC (A) Collector power dissipation PC (W) 1.2 0.8 0.4 20 µA 0 0 20 40 60 80 100 120 140 160 Forward current transfer ratio hFE 1 Ta = 75°C 25°C −25°C 0.1 1 10 Cob  VCB en an IE = 0 f = 1 MHz Ta = 25°C int 20 Ma Collector output capacitance C (pF) (Common base, input open circuited) ob 2 500 2 000 1 500 16 12 10 0 −25°C 500 0 0.01 0.1 1 Collector current IC (A) 100 SJC00254BED 0.4 0.8 1.2 1.6 2.0 Base-emitter voltage VBE (V) fT  I E 300 25°C Collector-base voltage VCB (V) 2 0 12 Ta = 75°C 4 1 10 VCE = 10 V 8 0 8 1 000 ce /D isc on tin Collector current IC (A) 24 6 hFE  IC 10 0.01 0.01 4 3 000 IC / IB = 10 ue Collector-emitter saturation voltage VCE(sat) (V) VCE(sat)  IC 0.1 2 Collector-emitter voltage VCE (V) Ambient temperature Ta (°C) 100 0 Transition frequency fT (MHz) 0 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. 10 µA 10 VCB = 10 V Ta = 25°C 250 200 150 100 50 0 −1 −10 −100 Emitter current IE (mA) −1 000 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. M Di ain sc te on na tin nc ue e/ d (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: – Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. – Any applications other than the standard applications intended. d pla inc ne lud se pla m d m es v ne ain ain foll htt isit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. Pl ea Ma int en an ce /D isc on tin ue (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
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