This product complies with the RoHS Directive (EU 2002/95/EC).
Silicon Junction FETs (Small Signal)
2SK0198 (2SK198)
Silicon N-channel junction FET
For low-frequency amplification
■ Package
• High mutual conductance gm
• Low-noise characteristics
• Mini type package, allowing downsizing of the sets and automatic
insertion through the tape/magazine packing
• Code
Mini3-G1
• Pin Name
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■ Features
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■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
VDS
30
V
VDGO
30
V
Drain current
ID
20
mA
Gate current
IG
10
mA
150
mW
150
°C
−55 to +150
°C
Drain-sourse voltage
Drain-gate voltage (Source open)
Power dissipation
PD
Channel temperature
Tch
Storage temperature
Tstg
1: Source
2: Drain
3: Gate
■ Marking Symbol: 1O
■ Electrical Characteristics Ta = 25°C ± 3°C
Symbol
Conditions
Min
ue
Parameter
IDSS
VDS = 10 V, VGS = 0
IGSS
VGS = −30 V, VDS = 0
Gate-source cutoff voltage
VGSC
VDS = 10 V, ID = 10 µA
Forward transfer admittance
Yfs
VDS = 10 V, ID = 0.5 mA, f = 1 kHz
4
VDS = 10 V, VGS = 0, f = 1 kHz
4
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Drain-source current
*
an
Gate-source cutoff current
Ciss
Reverse transfer capacitance
(Common source)
Crss
Noise voltage
NV
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int
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Short-circuit forward transfer capacitance
(Common source)
VDS = 10 V, VGS = 0, f = 1 MHz
VDS = 30 V, ID = 1 mA, GV = 80 dB
Rg = 100 kΩ, Function = FLAT
Typ
0.5
0.1
Max
Unit
12
mA
100
nA
1.5
V
mS
14
pF
3.5
pF
60
mV
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
P
Q
R
IDSS (mA)
0.5 to 3.0
2.0 to 6.0
4.0 to 12.0
Note) The part number in the parenthesis shows conventional part number.
Publication date: May 2008
SJF00006DED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SK0198
PD Ta
ID VDS
240
ID VGS
8
9.6
VDS = 10 V
Ta = 25°C
8.0
160
120
Drain current ID (mA)
Drain current ID (mA)
6
VGS = 0 V
4
− 0.1 V
6.4
4.8
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Power dissipation PD (mW)
200
80
− 0.2 V
2
− 0.3 V
40
3.2
1.6
Ta = 75°C
25°C
− 0.4 V
0
0
40
80
120
160
0
gm VGS
8
10
16
12
8
IDSS = 5.0 mA
4
2.0 mA
− 0.6
− 0.4
− 0.2
8
4
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Gate-source voltage VGS (V)
Crss VDS
f = 1 MHz
VGS = 3 V
Ta = 25°C
en
Noise figure NF (dB)
Ma
3
2
3
4
5
2
1
6
7
8
Drain current ID (mA)
VDS = 10 V
ID = 5.2 mA
Ta = 25°C
8
6
Rg = 500 Ω
4
2
1 kΩ
0
1
10
Drain-source voltage VDS (V)
100
0
1
10
102
103
Frequency f (Hz)
SJF00006DED
− 0.4
− 0.2
0
10
f = 1 MHz
VGS = −3 V
Ta = 25°C
8
6
Ciss
4
Coss
2
0
1
10
Drain-source voltage VDS (V)
NF f
10
int
4
1
12
an
5
IDSS = 5.0 mA
2.0 mA
0
− 0.6
Ciss , Coss VDS
12
0
0
− 0.8
Gate-source voltage VGS (V)
16
ue
0
− 0.8
0
−1.0
12
Short-circuit forward transfer capacitance (Common-source) Ciss ,
Short-circuit output capacitance (Common-source) Coss (pF)
VDS = 10 V
Ta = 25°C
Mutual conductance gm (mS)
Mutual conductance gm (mS)
6
gm ID
VDS = 10 V
Ta = 25°C
Reverse transfer capacitance
Crss (pF)
(Common-source)
4
20
20
2
2
Drain-source voltage VDS (V)
Ambient temperature Ta (°C)
−25°C
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0
104
100
10°
ue
+0.25
−0.05
3
1
2
(0.95)
(0.95)
2.90 −0.05
1.9 ±0.1
+0.20
+0.3
−0.1
+0.2
−0.1
Mini3-G1
0.40 −0.05
+0.10
SJF00006DED
±0.2
+0.2
−0.3
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This product complies with the RoHS Directive (EU 2002/95/EC).
2SK0198
Unit: mm
0.16 −0.05
+0.10
3
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
M
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(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
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(4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
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(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
