This product complies with the RoHS Directive (EU 2002/95/EC).
Power MOSFETs
2SK3031
Silicon N-channel power MOSFET
■ Features
Unit: mm
6.5±0.1
5.3±0.1
4.35±0.1
Unit
V
V
A
A
mJ
W
2
(5.5)
1
Parameter
Symbol
Rating
Drain-source surrender voltage
VDSS
100
Gate-source surrender voltage
VGSS
±20
Drain current
ID
±15
Peak drain current
IDP
±45
Avalanche energy capability *
EAS
7.2
Power dissipation
PD
20
Ta = 25°C
1
Channel temperature
Tch
150
Storage temperature
Tstg
−55 to +150
3
1: Gate
2: Drain
3: Source
EIAJ: SC-63
U-G1 Package
Marking Symbol: K3031
Internal Connection
°C
°C
D
G
S
ue
■ Electrical Characteristics TC = 25°C ± 3°C
Symbol
VDSS
IDSS
IGSS
Vth
Yfs
RDS(on)1
RDS(on)2
Diode forward voltage
VDSF
Ciss
Short-circuit forward transfer capacitance
(Common source)
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Parameter
Drain-source surrender voltage
Drain-source cutoff current
Gate-source cutoff current
Gate threshold voltage
Forward transfer admittance
Drain-source ON resistance
(5.3)
(4.35)
(3.0)
(1.8)
4.6±0.1
■ Absolute Maximum Ratings TC = 25°C
Note) *: L = 0.1 mH, IL = 12 A, 1 pulse
0.75±0.1
2.3±0.1
1.0±0.2
2.5±0.1
• Non-contact relay
• Solenoid drive
• Motor drive
• Control equipment
• Switching mode regulator
1.0±0.1
0.1±0.05
0.5±0.1
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■ Applications
0.8 max.
1.8±0.1
0.5±0.1
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7.3±0.1
• Avalanche energy capability guaranteed
• High-speed switching
• Low ON resistance Ron
• No secondary breakdown
• Low-voltage drive
• High electrostatic energy capability
2.3±0.1
Conditions
ID = 1 mA, VGS = 0
VDS = 80 V, VGS = 0
VGS = ±20 V, VDS = 0
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 8 A
VGS = 10 V, ID = 8 A
VGS = 4 V, ID = 8 A
IDR = 15 A, VGS = 0
VDS = 10 V, VGS = 0, f = 1 MHz
Min
100
1.0
6
Typ
Max
10
±10
2.5
11
90
105
135
160
−1.4
Unit
V
µA
µA
V
S
mΩ
300
V
pF
Short-circuit output capacitance
(Common source)
Coss
190
pF
Reverse transfer capacitance
(Common source)
Crss
33
pF
20
90
330
1 450
ns
ns
ns
ns
°C/W
°C/W
Turn-on delay time
Rise time
Fall time
Turn-off delay time
Thermal resistance (ch-c)
Thermal resistance (ch-a)
td(on)
tr
tf
td(off)
Rth(ch-c)
Rth(ch-a)
VDD = 30 V, ID = 8 A, RL = 3.75 Ω
VGS = 10 V
6.25
125
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: January 2004
SJG00014BED
1
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
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(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
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(4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
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(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
