2SK3045

This product complies with the RoHS Directive (EU 2002/95/EC). Power MOSFETs 2SK3045 Silicon N-channel power MOSFET Unit: mm ■ Features 4.6±0.2 9.9±0.3 2.9±0.2 3.0±0.5 • Avalanche energy capability guaranteed: EAS > 15.6 mJ • Gate-source surrender voltage VGSS : ±30 V guaranteed • High-speed switching • No secondary breakdown M Di ain sc te on na tin nc ue e/ d 15.0±0.5 φ 3.2±0.1 1.4±0.2 1.6±0.2 0.8±0.1 ■ Absolute Maximum Ratings TC = 25°C Unit V V A A mJ W 1 2 1: Gate 2: Drain 3: Source TO-220D-A1 Package 3 Marking Symbol: K3045 Internal Connection °C °C D G S ue ■ Electrical Characteristics TC = 25°C ± 3°C Symbol VDSS IDSS IGSS Vth Yfs RDS(on) VDF Ciss Short-circuit forward transfer capacitance (Common source) Ma int en an ce /D isc on tin Parameter Drain-source surrender voltage Drain-source cutoff current Gate-source cutoff current Gate threshold voltage Forward transfer admittance Drain-source ON resistance Diode forward voltage 0.55±0.15 2.54±0.30 5.08±0.50 Parameter Symbol Rating Drain-source surrender voltage VDSS 500 Gate-source surrender voltage VGSS ±30 Drain current ID ±2.5 Peak drain current IDP ±5 Avalanche energy capability * EAS 15.6 Power dissipation PD 30 Ta = 25°C 2 Channel temperature Tch 150 Storage temperature Tstg −55 to +150 Note) *: L = 5 mH, IL = 2.5 A, 1 pulse 2.6±0.1 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. • Non-contact relay • Solenoid drive • Motor drive • Control equipment • Switching mode regulator 13.7±0.2 4.2±0.2 Solder Dip ■ Applications Conditions ID = 1 mA, VGS = 0 VDS = 400 V, VGS = 0 VGS = ±30 V, VDS = 0 VDS = 25 V, ID = 1 mA VDS = 25 V, ID = 1.5 A VGS = 10 V, ID = 1.5 A IDR = 2.5 A, VGS = 0 VDS = 20 V, VGS = 0, f = 1 MHz Min 500 2.0 1.0 Typ Max 330 Unit V µA µA V S Ω V pF 100 ±1 5.0 1.5 3.2 4.0 −1.5 Short-circuit output capacitance (Common source) Coss 55 pF Reverse transfer capacitance (Common source) Crss 20 pF 15 25 30 55 ns ns ns ns °C/W °C/W Turn-on delay time Rise time Fall time Turn-off delay time Thermal resistance (ch-c) Thermal resistance (ch-a) td(on) tr tf td(off) Rth(ch-c) Rth(ch-a) VDD = 150 V, ID = 1.5 A, RL = 100 Ω VGS = 10 V 4.1 62.5 Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date: March 2004 SJG00022BED 1 This product complies with the RoHS Directive (EU 2002/95/EC). 2SK3045 PD  Ta Safe operation area 100 EAS  Tj 60 24 Non repetitive pulse TC = 25°C Avalanche energy capability EAS (mJ) (1) TC = Ta (2) Without heat sink 1 ms DC 1 40 30 20 16 12 M Di ain sc te on na tin nc ue e/ d Drain current ID (A) t = 10 µs 100 µs Power dissipation PD (W) 50 10 VDD = 50 V ID = 2.5 A 10 ms 100 ms 0.1 (1) 20 10 8 4 1 10 100 1 000 Drain-source voltage VDS (V) ID  VDS 80 120 0 25 160 Gate threshold voltage Vth (V) 4 TC = 0°C Drain current ID (A) 2.0 6V 40 W 150°C 25°C 100°C 3 2 1 5.5 V 5V 0 20 30 40 50 60 0 ce /D isc on tin Drain-source voltage VDS (V) RDS(on)  ID Forward transfer admittance Yfs (S) an en int Ma 8 TC = 150°C 6 100°C 4 25°C 0°C 2 4 6 8 10 0 1 2 3 4 Drain current ID (A) 5 VDS = 25 V ID = 1 mA 4 3 2 1 0 25 50 75 100 125 150 Case temperature TC (°C) Gate-source voltage VGS (V) Yfs  ID IDR  VDF 100 VGS = 0 TC = 25°C VDS = 25 V TC = 25°C 2.5 2.0 1.5 1.0 10 1 0.1 0.5 0 0 Vth  TC 5 12 3.0 VGS = 10 V 10 2 Drain reverse current IDR (A) 12 175 0 0 10 125 VDS = 25 V VGS = 10 V 7V 6.5 V 0 75 Junction temperature Tj (°C) 6 ue Drain current ID (A) 40 ID  VGS 1.0 Drain-source ON resistance RDS(on) (Ω) 0 5 TC = 25°C 2 0 Ambient temperature Ta (°C) 4.0 3.0 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. (2) 0.01 0.01 0 1 2 3 4 Drain current ID (A) SJG00022BED 5 0 0.5 1.0 1.5 Diode forward voltage VDF (V) 2.0 Short-circuit forward transfer capacitance (Common-source) Ciss , Short-circuit output capacitance (Common-source) Coss , Reverse transfer capacitance (Common-source) Crss (pF) 103 Ciss 102 10 Coss Crss 50 100 10−3 150 10−2 200 10−1 Drain-source voltage VDS (V) 400 1 250 Drain-source voltage VDS (V) 102 (1) Without heat sink (2) With a 100 mm × 100 mm × 2 mm Al heat sink Rth  t 10 1 10−1 Time t (s) 1 16 f = 1 MHz TC = 25°C VDS = 150 V 300 250 V 200 100 0 0 10 4 8 102 12 16 103 SJG00022BED 20 Gate charge load Qg (nC) 12 125 VGS 8 4 VDS 0 24 Turn-on delay time td(on) , Rise time tr , Fall time tf , Turn-off delay time td(off) (ns) Ciss , Coss , Crss  VDS Gate-source voltage VGS (V) 104 (1) (2) di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. ue ce /D isc on tin an en 10−2 10−4 int 0 Ma Thermal resistance Rth (°C/W) M Di ain sc te on na tin nc ue e/ d This product complies with the RoHS Directive (EU 2002/95/EC). 2SK3045 VDS , VGS  Qg 150 td(on) , tr , tf , td(off)  ID VDD = 150 V VGS = 10 V TC = 25°C 100 td(off) 75 50 25 0 tf tr td(on) 0 Drain current ID (A) 1.0 2.0 3.0 104 3 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. M Di ain sc te on na tin nc ue e/ d (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: – Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. – Any applications other than the standard applications intended. d pla inc ne lud se pla m d m es v ne ain ain foll htt isit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. Pl ea Ma int en an ce /D isc on tin ue (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.