AN1101SSMTXL

Operational Amplifier AN1101SSM CMOS single power supply ■ Overview 0.20+0.10 -0.05 0.20 AN1101SSM is an operational amplifier with a single power supply by CMOS diffusion process. It has low current-consumption compared to general purpose operational amplifier by bipolar diffusion process. 0 V to VDD is available for both input voltage and output voltage. And this IC is widely applicable to the butterydriven equipment and to many amplifier circuits which adopt small package products. 4 1.60±0.10 1.20±0.10 5 0.20 M Di ain sc te on na tin nc ue e/ d 2 3 0.50 0.50 1.00±0.10 1.60±0.10 0.60 max. 0 to 0.10 • Low current-consumption: IDD = 55 µA (typ.), VDD = 3 V • Operating input/output voltage range: 0 V to VDD • Small offset voltage: 0.5 mV (typ.) • Small input bias current: 1 pA (typ.) • Operating supply voltage range: 2.5 V to 5.5 V or ±1.25 V to ±2.75 V ■ Applications 1 0.10 1 2 5 0.08+0.10 -0.05 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. ■ Features Unit: mm 0.10 M Seating plane 3 4 SSMINI-5DA (Lead-free package) • Various small-size general consumer electronics equipment VDD VIN− 5 4 int en an ce /D isc on tin ue ■ Block Diagram Ma ■ Pin Descriptions Pin No. Symbol 1 VOUT 2 GND (VSS) 3 VIN+ Input (positive) 4 VIN− Input (negative) 5 VDD Power supply 1 2 3 VOUT GND (VSS) VIN+ Description Output Ground, VSS (negative supply) at using two power supply Note) The AN1101SSM has been designed for general consumer electronics equipment, not for the specific one requiring such a high reliability that may prevent it from threatening the human lives. Publication date: August 2002 SFB00001CEB 1 AN1101SSM ■ Absolute Maximum Ratings Parameter Symbol Rating Unit Supply voltage VDD 5.6 V Differential input voltage DVIN ±5.6 V VIN VSS to VDD V IDD  mA PD 50 mW Topr −30 to +85 °C Tstg −55 to +125 °C Input voltage Supply current M Di ain sc te on na tin nc ue e/ d Power dissipation *2 Operating ambient temperature Storage temperature *1 *1 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. Note) 1. *1: Except for the operating ambient temperature and storage temperature, all ratings are for Ta = 25°C. *2: The value at Ta = +85°C. 2. This IC is not suitable for car electrical equipment. ■ Recommended Operating Range Parameter Supply voltage Symbol Range Unit VDD 2.5 to 5.5 V ±1.25 to ±2.75 ■ Electrical Characteristics at VDD = 3.0 V, VSS = GND, Ta = 25°C ± 2°C Parameter Symbol Input offset voltage VIO Common-mode input voltage CMVIN Conditions Min Typ Max Unit Buffer circuit  0.5 5.5 mV RS = 10 kΩ, RF = 10 kΩ 0  3 V GV f = 100 Hz 60 90  dB Maximum output amplitude voltage 1 VOH RL ≥ 10 kΩ 2.90 2.98  V VOL ue Open-loop gain RL ≥ 10 kΩ  0.01 0.05 V Common-mode input voltage rejection ratio CMRR VIN = 0.0 V to 3.0 V, RS = RF = 10 kΩ 50 65  dB Supply voltage ripple rejection ratio * SVRR VDD = 2.5 V to 5.5 V 55 70  dB No load  55 100 µA en Supply current an ce /D isc on tin Maximum output amplitude voltage 2 IDD Ma int Note) * : Except for the supply voltage ripple rejection ratio (SVRR), VDD = 3 V. • Design reference data Note) The characteristics listed below are theoretical values based on the IC design and are not guaranteed. Parameter 2 Symbol Conditions Reference Unit Offset current IO  1 pA Input bias current IIO  1 pA Slew rate SR RL ≥ 10 kΩ 0.35 V/µs Zero-cross frequency fT AV = 1 0.8 MHz SFB00001CEB AN1101SSM ■ Technical Data • PD  Ta curve of SSMINI-5DA PD  Ta 0.200 0.150 M Di ain sc te on na tin nc ue e/ d Power dissipation PD (W) Independent IC without a heat sink Rth( j-a) = 833.3°C/W 0.120 0.050 0.000 0 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. 0.100 25 • Main characteristics 50 100 125 Ambient temperature Ta (°C) Supply current  Supply voltage 80 Low-level output voltage  Output flow-in current 60 50 40 Low-level output voltage VOL (V) 1.2 70 Buffer circuit VIN+ = VDD / 2 No load ue 30 20 ce /D isc on tin Supply current IDD (µA) 75 85 10 0 2.5 3 3.5 4 4.5 5 5.5 an Supply voltage VDD (V) 1.0 0.8 0.6 0.4 0.2 0 6 0 1 2 en int 4 5 Slew rate SR Buffer circuit VDD = 3 V No load 3V Ma High-level output voltage VOL (V) 2.8 3 Output flow-in current IO (mA) High-level output voltage  Output flow-out current 3.0 Buffer circuit VDD = 3 V VIN+ = 0 V Input 2V 2.6 1V 2.4 0V 2.2 3V 2.0 Output Buffer circuit VDD = 3 V VIN+ = 3 V 1.8 2V 1V 1.6 0V 0 0 1 2 3 4 5 0 Output flow-out current −IO (mA) 10 20 30 40 50 (µs) SFB00001CEB 3 AN1101SSM ■ Technical Data (continued) • Main characteristics (continued) Offset voltage  Ambient temperature Supply current  Ambient temperature 3 80 Buffer circuit VDD = 3 V VIN+ = VDD / 2 Buffer circuit VDD = 3 V VIN+ = VDD / 2 Supply current IDD (µA) 70 1 60 50 M Di ain sc te on na tin nc ue e/ d Offset voltage VIO (mV) 2 0 −1 −3 30 20 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. −2 40 10 −50 −25 0 25 50 75 Ambient temperature Ta (°C) 0 −50 100 VDD = 3 V AV = 40 dB No load 50 180 135 Phase 90 Phase ( ° ) Voltage gain (dB) 40 30 45 Voltage gain 20 0 10 −45 0 −20 100 2k ce /D isc on tin ue −10 10k 100k 1M an Frequency f (Hz) Ma int en ■ Application Circuit Example 10M VDD 0.1 µF 5 1 VIN− 4 2 VOUT 3 VIN+ GND (VSS) 4 0 25 50 Ambient temperature Ta (°C) Voltage gain · Phase  Frequency characteristics 60 −25 SFB00001CEB 75 100 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. 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Consult our sales staff in advance for information on the following applications: – Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. – Any applications other than the standard applications intended. d pla inc ne lud se pla m d m es v ne ain ain foll htt isit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. 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