Prepared
Ref No.
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Page No.
1
Structure
Silicon Monolithic Bipolar IC
Appearance
SIL-9 Pin Plastic Package (Power Type with Fin)
Application
Low Frequency Amplifier
Function
BTL 4.0W x 1ch Power Amplifier
with Standby Function and Volume Function
A
A-1
Absolute Maximum Ratings
No.
Item
Symbol
Ratings
Unit
Note
1
Storage Temperature
Tstg
-55 ~ +150
°C
1
2
Operating Ambient Temperature
Topr
-25 ~ +70
°C
1
3
Operating Ambient Pressure
Popr
4
Operating Constant Acceleration
Gopr
5
Operating Shock
Sopr
1.013x105±0.61x105
(1.0±0.6)
9,810
(1000)
4,900
(500)
Pa
(atm)
m/s2
(G)
m/s2
(G)
6
Supply Voltage
Vcc
14.4
V
7
Supply Current
Icc
1.0
A
8
Power Dissipation
PD
1.22
W
Operating Supply Voltage Range
Vcc
2
Ta=70°C
3.5V ~ 13.5V
Note 1) The temperature of all items shall be Ta=25°C except storage temperature and
operating ambient temperature.
2) At no signal input.
Eff. Date
Eff. Date
Eff. Date
Eff. Date
25-APR-2000 21-JUL-2000
FMSC-PSDA-002-01
Matsushita Electronics Corporation
Prepared
Ref No.
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Total Page
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Page No.
2
(Unless otherwise specified, the ambient temperature is 25°C±2˚C,
Vcc=8.0V, frequency=1kHz and RL=8Ω.)
B Electrical Characteristics
Test
Symbol Cir- Conditions
cuit
No Item
B-1
Limits
min typ max
Unit
1
Quiescent Circuit
Current
ICQ
1
Vin=0V, Vol=0V
-
20
60
mA
2
Standby Current
ISTB
1
Vin=0V, Vol=0V
-
1
10
µA
Output Noise
3 Voltage
VNO
1
Rg=10kΩ, Vol=0V
-
0.10
0.4
mVrms
4
Voltage Gain
GV
1
Po=0.5W, Vol=1.25V
31
33
35
dB
5
Total Harmonic
Distortion
THD
1
Po=0.5W, Vol=1.25V
-
0.10
0.5
%
6
Maximum Power
Output 1
PO 1
1
THD=10%, Vol=1.25V
2.4
3.0
-
W
7
Maximum Power
Output 2
PO 2
1
Vcc=9V
THD=10%, Vol=1.25V
3.2
4.0
-
W
8
Ripple Rejection
Ratio
RR
1
Rg=10kΩ, Vol=0V
Vr=0.5Vrms, fr=120Hz
30
50
-
dB
9
Output Offset
Voltage
Voff
1
Rg=10kΩ, Vol=0V
-250
0
250
mV
10 Volume
Attenuation Ratio
Att
1
Po=0.5W, Vol=0V
70
85
-
dB
11 Middle Voltage
Gain
G Vm
1
Po=0.5W, Vol=0.6V
20.5 23.5 26.5
Note
1
1
1
dB
Note 1) For this measurement, use the BPF = 15Hz ~ 30kHz (12dB/OCT).
Eff. Date
Eff. Date
Eff. Date
Eff. Date
25-APR-2000 21-JUL-2000
FMSC-PSDA-002-01
Matsushita Electronics Corporation
Prepared
Product Specifications
Checked
(Reference Data for Design)
Total Page
9
Approved
AN7523N
Page No.
3
Test
Symbol Cir- Conditions
cuit
pin
1 Standby
current
ISTB2
1
Vin=0V, VSTB=3V
2 Volume pin
current
IVOL
1
Zi
1
3 Input Impedance
B-2
(Unless otherwise specified, the ambient temperature is 25°C±2°C,
Vcc=8.0V, frequency=1kHz and RL=8Ω.)
B Electrical Characteristics
No Item
Ref No.
Limits
min typ max
Unit
-
-
25
µA
Vin=0V, Vol=0V
-12
-
-
µA
Vin=±0.3VDC
24
30
36
kΩ
Note
Note) The above characteristics are reference values determined for IC design, but not guaranteed
values for shipping inspection. If problems were to occur, counter measures will be
sincerely discussed.
Eff. Date
Eff. Date
Eff. Date
Eff. Date
25-APR-2000 21-JUL-2000
FMSC-PSDA-002-01
Matsushita Electronics Corporation
Prepared
Ref No.
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AN7523N
Approved
C-1
Total Page
9
Page No.
4
(Description of test circuit and test method)
Test Circuit 1
AN7523N
1
2
3
6
5
4
7
8
9
+
+
470µ
10µ
+
270k
1.0µ
10k
OUT1
8Ω
68k
Vcc
5V
1.25V
Vin
0V
0V
Stand-by
Volume
Note) If the standby pin is open or 0V, the IC is on standby state.
The IC is in the state of volume minimum if the Volume pin is ground.
The IC is in the state of volume maximum if the Volume pin is open.
Eff. Date
Eff. Date
Eff. Date
Eff. Date
25-APR-2000 21-JUL-2000
FMSC-PSDA-002-01
Matsushita Electronics Corporation
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Ref No.
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D-1
Total Page
9
Page No.
5
Circuit Function Block Diagram
_ +
+ _
1
2
Vcc
3
4
Output
GND
5
6
7
8
9
Input
GND
Pin Descriptions
Pin No. Description
1
Vcc
2
Ch Output (+)
3
GND (Output)
4
Ch Output (-)
5
Standby
6
Ch Input
7
GND (Input)
8
N.C
9
Volume
Note) Do not apply voltage or current to NC pin from outside.
Eff. Date
Eff. Date
Eff. Date
Eff. Date
25-APR-2000 21-JUL-2000
FMSC-PSDA-002-01
Matsushita Electronics Corporation
Prepared
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Package Name
Ref No.
E
Total Page
9
Page No.
6
F - 9S
Unit : mm
6.3±0.3
7.1±0.25
5.8±0.25
3.75±0.25
8
7
5
2.54
15.0
0.15 MAX
21.6±0.3
6
18.5±0.25
19.92±0.3
φ3.3±0.1
9
0.5±0.1
1.5±0.25
1.2±0.25
φ2.65±0.1
8.4±0.25
4
3
2
1.7±0.25
5.6±0.25
0.44 +0.1
-0.05
1.7±0.25
1
Name of item
Date Code
Company insignia
Eff. Date
Eff. Date
Eff. Date
Eff. Date
25-APR-2000 21-JUL-2000
FMSC-PSDA-002-01
Matsushita Electronics Corporation
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Ref No.
F-1
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Page No.
7
(Structure Description)
Chip surface passivation
SiN,
PSG,
Others (
)
1
Lead frame material
Fe group,
Cu group,
Others (
)
2 , 6
Inner lead surface process
Ag plating,
Au plating,
Others (
)
2
Outer lead surface process
Solder plating,
Solder dip,
Others (
)
6
Chip mounting method
Ag paste,
Au-Si alloy, Solder, Others (
)
3
Wire bonding method
Thermalsonic bonding,
Others (
)
4
Wire material, Diameter
Au,
Others (
)
4
Mold material
Epoxy,
Others (
)
5
Molding method
Transfer mold,
Others (
)
5
Diameter 30 µm
Multiplunger mold,
Package 9-SIP(F)
1
2
5
6
3
4
Eff. Date
Eff. Date
Eff. Date
Eff. Date
25-APR-2000 21-JUL-2000
FMSC-PSDA-002-01
Matsushita Electronics Corporation
Prepared
Product Specifications
Ref No.
G
Checked
(Technical Data)
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9
Approved
AN7523N
Page No.
8
(
)
Rth(j-c) = 12.0°C/W
Rth(j-a) = 66.5°C/W
F-9S Package Power Dissipation
PD - Ta
5000
5°C/W heat sink
4706
4500
4000
10°C/W heat sink
Power Dissipation, PD (mW)
3636
3500
3000
20°C/W heat sink
2500
Without heat sink
PD=1880mW(25°C)
2000
1500
Without heat sink
1203
1000
500
0
0
25
50
70 75
100
125
150
Ambient Temperature, Ta (°C)
Eff. Date
Eff. Date
Eff. Date
Eff. Date
25-APR-2000 21-JUL-2000
FMSC-PSDA-002-01
Matsushita Electronics Corporation
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Product Specifications
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AN7523N
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Ref No.
H
Total Page
9
Page No.
9
(Precautions for use)
1) Make sure that the IC is free of any pin short-circuiting, ground short, and load shortcircuiting.
2) Ground the radiation fin so that there will be no difference in electric potential between the
radiation fin and ground.
3) The thermal protection circuit operates at a Tj of approximately 150°C. The thermal
protection circuit is reset automatically when the temperature drops.
4) Make sure that the heat radiation design is effective enough if the Vcc is comparatively high
or the IC operates high output power.
5) Connect only ground pin for signal sources to the signal GND pin of the amplifier on the
previous stage.
6) The electric surge voltage for this IC low, therefore be extra careful when using the
following pin (at 200pF):
Pin 6=+180V, Pin 9=+100V
Eff. Date
Eff. Date
Eff. Date
Eff. Date
25-APR-2000 21-JUL-2000
FMSC-PSDA-002-01
Matsushita Electronics Corporation