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AN7586
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A- 1
Total Page
12
Page No.
1
Structure
Silicon Monolithic Bipolar IC
Appearance
SIL-7 Pins Plastic Package
(Power Type With Fin)
Application
Low Frequency Amplifier
Function
Mono 10W Audio Power Amplifier, with
standby circuit and incorporating protection circuits
Absolute Maximum Ratings
A
No.
Item
Symbol
Ratings
Unit
Note
1
Storage Temperature
Tstg
-55 ~ +150
°C
1
2
Operating Ambient Temperature
Topr
-25 ~ +75
°C
1
3
Operating Ambient Pressure
Popr
1.013x10 ±0.61x10
(1.0 ± 0.6)
4
Operating Constant Acceleration
Gopr
9,810
(1,000)
m/s
5
Operating Shock
Sopr
4,900
(500)
m/s
6
Power Supply Voltage
Vcc
35.0
V
7
Power Supply Current
Icc
2.0
A
8
Power Dissipation
PD
18.7
W
5
Operating Supply Voltage Range
Vcc
5
Pa
(atm)
2
(G)
2
(G)
2
10.0 V ~ 32.0 V
Note : 1) Except these items, all other measurements are
taken at Ta = 25 °C.
2) Ta = 75 °C with infinite heat sink.
Eff. Date
Eff. Date
Eff. Date
Eff. Date
11-Feb-1999
FMSC-PSDA-002-01
Matsushita Electronics Corporation
Prepared
Product Specifications
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A
No.
1
Ref No.
A -2
Total Page
12
Page No.
2
Absolute Maximum Ratings
Item
Symbol
Pin Voltage (Pin 3)
V3
Ratings
Unit
-0.3 ~ +3.0
V
Note
Note) For the above mentioned terminals do not apply a voltage or current
that is outside the described range.
Eff. Date
Eff. Date
Eff. Date
Eff. Date
11-Feb-1999
FMSC-PSDA-002-01
Matsushita Electronics Corporation
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B-1
Total Page
12
Page No.
3
Electrical Characteristics
(Ambient temperature is 25°C±2°C unless otherwise specified)
B
Symbol Test
Cct.
Condition
Limit
Unit Note
Min Typ Max
No.
Item
1
Quiescent Current
Icq
Vin=0mV
-
30
60
mA
2
Output End Noise Voltage
Vno
No input, Rg=10k
-
0.22
0.4
mV
3
Voltage Gain
Gv
Vin=57mV
32
34
36
dB
4
Total Harmonic Distortion
THD
Vin=57mV
-
0.2
0.4
%
5
Maximum Output Power
Po
Vcc=26V,
THD=10%
8.0
10.0
-
W
6
Ripple Rejection Ratio
RR
Vr=1 Vrms,
fr=120Hz,Rg=10k
45
55
-
dB
7
Stand-by On Voltage
Vstb-on
No input
Icc ≤ 0.1mA
-
-
5.0
V
8
Stand-by Off Voltage
Vstb-off
No input
Icc ≥ 9.5mA
8.5
-
-
V
2
2
Note : 1) f=1kHz, RL=8Ω, Vcc=26V, unless otherwise stated
2) For this measurement, use the 20Hz~20kHz (12dB/OCT) filter.
Eff. Date
Eff. Date
Eff. Date
Eff. Date
11-Feb-1999
FMSC-PSDA-002-01
Matsushita Electronics Corporation
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Total Page
12
Page No.
4
Description of Test Circuits and Test Methods
Test Circuit :
AN7586
2
+
3
4
5
+
100µ
+
7
+
1000µ
Rg
10k
6
1000µ
1
STB
RL 8Ω
(20W)
1
2
Vcc
1µ
Vin
Vout
Vcc
Note:
For ' OPERATIONAL MODE ', connect STB to Vcc.
Eff. Date
Eff. Date
Eff. Date
Eff. Date
11-Feb-1999
FMSC-PSDA-002-01
Matsushita Electronics Corporation
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Ref No.
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D-1
Total Page
12
Page No.
5
Circuit Function Block Diagram
+
-
Protection Circuit
-Temperature
-Over-voltage
-Over-current
-Load short
Ripple
Filter
RF
GND
(Input)
In
Out
GND
(Output)
1
2
3
4
5
VCC Stand-by
6
7
Pin Descriptions
Pin No.
1
2
3
4
Eff. Date
Pin Descriptions
Ripple Filter
GND (input)
Input
Output
Eff. Date
Eff. Date
Pin No.
5
6
7
Pin Descriptions
GND (output)
Vcc
Standby
Eff. Date
11-Feb-1999
FMSC-PSDA-002-01
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Ref No.
E-1
Total Page
12
Page No.
6
Package Name
FP - 7S
Unit : mm
∅ 3.6
6.4 ± 0.25
7.7 ± 0.3
7.8 ± 0.25
7
0.6±0.1
6
16.9±0.3
4
R1.8
7.6 ± 0.25
15.3 ± 0.3
17.2 ± 0.3
5
3
0.6
2.54
2
3.5 ± 0.3
1.2 ± 0.1
+0.1
0.25 -0.05
1
Company
insignia
Date
Code
Name
of item
Polarity
Eff. Date
Eff. Date
Eff. Date
Eff. Date
11-Feb-1999
FMSC-PSDA-002-01
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Ref No.
F
Total Page
12
Page No.
7
(Structure Description)
Chip surface passivation
SiN,
PSG,
Others (
)
1
Lead frame material
Fe group,
Cu group,
Others (
)
2 , 6
Inner lead surface process
Ag plating,
Au plating,
Others (
)
2
Outer lead surface process
Solder plating,
Solder dip,
Others (
)
6
Chip mounting method
Ag paste,
Au-Si alloy, Solder, Others (
)
3
Wire bonding method
Thermalsonic bonding,
Others (
)
4
Wire material
Au,
Others (
)
4
Mold material
Epoxy,
Others (
)
5
Molding method
Transfer mold,
Multiplunger mold,
Others (
)
5
Heat Fin Material
Fe group,
Cu group,
Others (
)
7
Diameter
38
µm
Package FP-7S
1
4
3
5
6
7
2
Eff. Date
Eff. Date
Eff. Date
Eff. Date
11-Feb-1999
FMSC-PSDA-002-01
Matsushita Electronics Corporation
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Ref No.
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Total Page
12
Page No.
8
Application Circuit
VCC
100µ
R.F.
1000µ
VCC
6
1
Operational Mode
STB
Standby Mode
7
Ripple Filter
1µ
3
Vin
4
1000µ
SP
8Ω
10k
Protection Cct
-Temperature
-Over-Voltage
-Over-Current
-Load Short
5
Output GND
2
Input GND
Operational Mode
Standby Mode
Eff. Date
Eff. Date
VCC
0V
Eff. Date
Eff. Date
11-Feb-1999
FMSC-PSDA-002-01
Matsushita Electronics Corporation
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(Technical Data)
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Pin
No.
Function
1
Ripple Filter
Adjacent Circuitry
Ref No.
Total Page
12
Page No.
9
Pins Description / Signal
This is the pin to connect the
positive terminal of a ripple
filter capacitor.
6
G-2
DC Bias
(V)
Vcc-1.5VBE
30kΩ
1
15.7k
15kΩ
20kΩ
2
2
Input GND
3
Input
3
200Ω
Input ground pin.
0V
This is the amplifier input pin.
0V
400Ω
30kΩ
2
Eff. Date
11-Feb-1999
Eff. Date
FMSC-PSDA-002-01
Eff. Date
Eff. Date
Matsushita Electronics Corporation
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(Technical Data)
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Pin Function
No.
4
Ref No.
Product Specifications
Adjacent Circuitry
Output
G-2
Total Page
12
Page No.
10
Pins Description / Signal
DC Bias
(V)
Output pin
Vcc/2
6
Pre Amp
Driver Cct
4
+
_
600Ω
5
Vcc/2
30kΩ
5
Output
Gnd
Output ground.
6
Vcc
This is the power supply pin.
7
Standby
6
0V
Typ: 26V
Standby control pin.
Standby Mode
=0V
Operational Mode = Vcc
7
5kΩ
5kΩ
3kΩ
42
Eff. Date
11-Feb-1999
Eff. Date
FMSC-PSDA-002-01
Eff. Date
Eff. Date
Matsushita Electronics Corporation
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FP-7S
32
Ref No.
G-3
Total Page
12
Page No.
11
Power Dissipation vs. Ambient Temperature
1 Infinity Heat Sink
:
Rth(j-c) = 4 ˚C/W
2 No Heat Sink
:
Rth(j-a) = 53.2 ˚C/W
31.25W
30
28
1
26
Power Dissipation PD (W)
24
22
20
18
16
14
12
10
8
6
4
2.35W
2
0
0
20
2
40
60
80
100
120
140
Ambient Temperature Ta (˚C)
Eff. Date
Eff. Date
Eff. Date
Eff. Date
11-Feb-1999
FMSC-PSDA-002-01
Matsushita Electronics Corporation
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Ref No.
H
Total Page
12
Page No.
12
Application's Precautions
(1)
External heatsink is needed when used. External heatsink should be
fixed to the chassis.
(2)
Fin of the IC can be connected to GND.
(3)
Please prevent "Output to VCC short", "Output to GND short", “Pin Shift”
in direction of Pin 7 and “Reverse Insertion" to avoid damaging the IC.
(4)
The temperature protection circuit will operate at Tj around 150˚C.
However, if temperature decrease, the protection circuit will
automatically be deactivated and resume normal operation.
Eff. Date
Eff. Date
Eff. Date
Eff. Date
11-Feb-1999
FMSC-PSDA-002-01
Matsushita Electronics Corporation
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