RF PhotoMOS (AQV22❍N)
Lower output capacitance
and on resistance.
High speed switching.
(Turn on time: 0.2ms,
Turn off time: 0.08ms).
RF PhotoMOS
(AQV22❍N)
FEATURES
6.4±0.05
.252±.002
3.9±0.2
.154±.008
8.8±0.05
.346±.002
1. PhotoMOS relay with high response
speed, low leakage current and low On
resistance
2. Low capacitance between output
terminals ensures high response
speed:
The capacitance between output
terminals is small, typically 10 pF. This
enables for a fast operation speed of 200
µs.
3. High sensitivity and low On
resistance
Maximum 0.1 A of load current can be
controlled with input current of 5 mA. The
On resistance is less than our
conventional models. With no metallic
contacts, the PhotoMOS relay has stable
switching characteristics.
6.4±0.05
.252±.002
3.6±0.2
.142±.008
8.8±0.05
.346±.002
mm inch
1
6
2
5
3
4
4. Low-level off state leakage current
The SSR has an off state leakage current
of several milliamperes, whereas the
PhotoMOS relay has only 30 pA even
with the rated load voltage of 200 V
(AQV227N).
5. Controls low-level analog signals
PhotoMOS relay features extremely low
closed-circuit offset voltages to enable
control of small analog signals without
distortion.
6. Low terminals electromotive force
(approx. 1 µV)
TYPICAL APPLICATIONS
• Measuring devices
• Scanner, IC checker, Board tester
TYPES
Output rating*
Type
AC/DC type
Part No.
Through hole
terminal
Packing quantity
Surface-mount terminal
Tape and reel packing style
Picked from the
Picked from the
1/2/3-pin side
4/5/6-pin side
Load
voltage
Load
current
200 V
70 mA
AQV227N
AQV227NA
AQV227NAX
AQV227NAZ
400 V
50 mA
AQV224N
AQV224NA
AQV224NAX
AQV224NAZ
Tube packing style
Tube
Tape and reel
1 tube contains
50 pcs.
1 batch contains
500 pcs.
1,000 pcs.
*Indicate the peak AC and DC values.
Note: For space reasons, the package type indicator “X” and “Z” are omitted from the seal.
RATING
1. Absolute maximum ratings (Ambient temperature: 25°C 77°F)
Item
Input
Output
LED forward current
LED reverse voltage
Peak forward current
Power dissipation
Load voltage (peak AC)
Continuous load current
Type of
Symbol connection
IF
VR
IFP
Pin
VL
A
IL
B
C
AQV227N(A)
AQV224N(A)
50 mA
5V
1A
75 mW
f = 100 Hz, Duty factor = 0.1%
200 V
0.07 A
0.08 A
0.10 A
400 V
0.05 A
0.06 A
0.08 A
0.21 A
0.15 A
Peak load current
Ipeak
Power dissipation
Total power dissipation
I/O isolation voltage
Pout
PT
Viso
360 mW
410 mW
1,500 V AC
Operating
Topr
–40°C to +85°C –40°F to +185°F
Storage
Tstg
–40°C to +100°C –40°F to +212°F
Temperature
limits
Remarks
All Rights Reserved © COPYRIGHT Matsushita Electric Works, Ltd.
A connection: Peak AC, DC
B, C connection: DC
A connection: 100 ms (1 shot),
VL = DC
Non-condensing at low
temperatures
RF PhotoMOS (AQV22❍N)
2. Electrical characteristics (Ambient temperature: 25°C 77°F)
Type of
Symbol connection
Item
Typical
Maximum
Minimum
Typical
Typical
Maximum
LED operate current
Input
LED turn off current
LED dropout voltage
Typical
Maximum
Typical
On resistance
Maximum
Typical
Output
Maximum
Typical
Output capacitance
Transfer
characteristics
IFon
—
IFoff
—
VF
—
Ron
A
Ron
B
Ron
C
Cout
Maximum
Typical
Off state leakage current
Maximum
Typical
Turn on time*
Maximum
Switching
speed
Typical
Turn off time*
Maximum
Typical
I/O capacitance
Maximum
Initial I/O isolation
Minimum
resistance
AQV227N(A)
AQV224N(A)
0.90 mA
3.0 mA
0.4 mA
0.85 mA
1.25 V (1.14 V at IF = 5 mA)
1.5 V
30 Ω
70 Ω
50 Ω
100 Ω
16 Ω
55 Ω
25 Ω
70 Ω
8Ω
28 Ω
12.5 Ω
35 Ω
10 pF
—
15 pF
30 pA
90 pA
Remarks
IL = Max.
IL = Max.
IF = 50 mA
IF = 5 mA
IL = Max.
Within 1 s on time
IF = 5 mA
IL = Max.
Within 1 s on time
IF = 5 mA
IL = Max.
Within 1 s on time
IF = 0
VB = 0
f = 1 MHz
IF = 0
VL = Max.
ILeak
—
Ton
—
Toff
—
0.08 ms
0.2 ms
IF = 5 mA
IL = Max.
Ciso
—
0.8 pF
1.5 pF
f = 1 MHz
VB = 0
Riso
—
1,000 MΩ
500 V DC
10 nA
0.20 ms
0.5 ms
IF = 5 mA
IL = Max.
Note: Recommendable LED forward current IF = 5mA.
*Turn on/Turn off time
Input
90%
Output
10%
Toff
Ton
■
■
■
REFERENCE DATA
1. Load current vs. ambient temperature
characteristics
Allowable ambient temperature: –40°C to +85°C
–40°F to +185°F
Type of connection: A
2. On resistance vs. ambient temperature
characteristics
Measured portion: between terminals 4 and 6;
LED current: 5 mA; Load voltage: Max. (DC);
Continuous load current: Max. (DC)
3. Turn on time vs. ambient temperature
characteristics
Sample: AQV227N, AQV224N;
LED current: 5 mA; Load voltage: Max. (DC);
Continuous load current: Max. (DC)
1.0
120
150
100
AQV227N
50
AQV224N
0
–40 –20
0
20 40
60 80 85100
Ambient temperature, °C
AQV224N
80
60
40
AQV227N
0.8
0.6
0.4
AQV227N
AQV224N
0.2
20
0
Turn on time, ms
Load current, mA
On resistance, Ω
100
–40 –20
0
20 40
60
80 85
Ambient temperature, °C
0
–40 –20
All Rights Reserved © COPYRIGHT Matsushita Electric Works, Ltd.
0
20
40 60 8085
Ambient temperature, °C
RF PhotoMOS (AQV22❍N)
4. Turn off time vs. ambient temperature
characteristics
Sample: AQV227N, AQV224N;
LED current: 5 mA; Load voltage: Max. (DC);
Continuous load current: Max. (DC)
5. LED operate current vs. ambient
temperature characteristics
Sample: AQV227N, AQV224N;
Load voltage: Max. (DC);
Continuous load current: Max. (DC)
0.3
0.2
5
4
3
2
AQV227N
1
0.1
AQV224N
AQV227N
–40 –20
0
0
20
40 60 80 85
Ambient temperature, °C
7. LED dropout voltage vs. ambient
temperature characteristics
–40 –20
–3 –2
1.1
1.0
0
–40 –20
AQV227N
AQV224N
50
–50
2
3
4
Voltage, V
–100
10
–150
10. Turn on time vs. LED forward current
characteristics
Sample: AQV227N, AQV224N;
Measured portion: between terminals 4 and 6;
Load voltage: Max. (DC);
Continuous load current: Max. (DC);
Ambient temperature: 25°C 77°F
Sample: AQV227N, AQV224N;
Measured portion: between terminals 4 and 6;
Load voltage: Max. (DC);
Continuous load current: Max. (DC);
Ambient temperature: 25°C 77°F
0.8
0.6
0.18
0.14
AQV224N
0.10
AQV227N
0.4
0.06
AQV224N·AQV227N
0.2
0
10
0
20
30
40
50
60
LED forward current, mA
13. Isolation characteristics
(50 Ω impedance)
Measured portion: between terminals 4 and 6;
Ambient temperature: 25°C 77°F
0
10
20
30
40
50
60
LED forward current, mA
Measured portion: between terminals 4 and 6;
Ambient temperature: 25°C 77°F
6
Insertion loss, dB
Isolation, dB
80
60
AQV224N
40
20
0
5
AQV224N
4
3
AQV227N
2
AQV227N
1
104
105
106
Frequency, HZ
107
0
200
300
Load voltage, V
104
105
106
Frequency, HZ
400
12
10
8
6
4
AQV227N
2
14. Insertion loss characteristics
(50 Ω impedance)
100
100
Measured portion: between terminals 4 and 6;
Frequency: 1 MHz, 30 mVrms;
Ambient temperature: 25°C 77°F
Output capacitance, pF
Turn on time, ms
1.0
AQV227N
–12
12. Output capacitance vs. applied voltage
characteristics
0.22
1.2
AQV224N
0
11. Turn off time vs. LED forward current
characteristics
1.4
0
20 40
60
80 85
Ambient temperature, °C
10–9
1
80 85
0
20 40 60
Ambient temperature, °C
AQV227N
Sample: AQV227N, AQV224N;
Measured portion: between terminals 4 and 6;
Ambient temperature: 25°C 77°F
–1
50mA
30mA
20mA
10mA
5mA
–40 –20
Off state leakage current, A
Current, mA
LED dropout voltage, V
–4
1.2
AQV224N
10–6
100
1.3
2
9. Off state leakage current
150
1.4
3
0
0
20 40
60 80 85
Ambient temperature, °C
Measured portion: between terminals 4 and 6;
Ambient temperature: 25°C 77°F
1.5
4
1
AQV224N
8. Current vs. voltage characteristics of output
at MOS portion
Sample: All types;
LED current: 5 to 50 mA
Turn on time, ms
LED turn off current, mA
LED operate current, mA
Turn off time, ms
0.4
0
Sample: AQV227N, AQV224N;
Load voltage: Max. (DC);
Continuous load current: Max. (DC)
5
0.5
0
6. LED turn off current vs. ambient temperature
characteristics
107
All Rights Reserved © COPYRIGHT Matsushita Electric Works, Ltd.
0
AQV224N
0
20
40
60
80
100
Applied voltage, V