CNB1304H

Reflective Photosensors (Photo Reflectors) CNB1304H (ON2175) Reflective photosensor Tape end sensor for DAT (R2.3) 4.0±0.3 Unit: mm φ2.2±0.3 Symbol Rating Reverse voltage VR 3 V emitting diode) Forward current IF 50 mA Power dissipation *1 Unit PD 75 mW Output (Photo Collector-emitter voltage transistor) (Base open) VCEO 30 V Emitter-collector voltage (Base open) VECO 5 V Collector current IC 20 mA Collector power dissipation *2 PC 100 mW Operating ambient temperature T opr −20 to +85 °C Storage temperature Tstg −30 to +100 °C +0 4.0±0.3 (C0.2) 2-0.4±0.2 (3.75) 4 2 3.0±0.3 +0 φ1.2 −0.3 2-0.15 +0.2 -0.1 (3.75) 1: Anode 2: Cathode 3 1 3: Collector 4: Emitter PRSTR104-005 Package (Note) ( ) Dimension is reference Note) *1: Input power derating ratio is 1.0 mW/°C at Ta ≥ 25°C. *2: Output power derating ratio is 1.33 mW/°C at Ta ≥ 25°C. ce /D isc on tin ue Temperature (C0.3) 7±0.3 5.0 min. ■ Absolute Maximum Ratings Ta = 25°C Parameter 2-φ1.2±0.15 7.0±0.3 1.0±0.3 • Fast response • Small size and light weight Input (Light 3.75±0.15 +0 8.0 -0.3 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. ■ Features 6.5±0.3 5.0 -0.3 M Di ain sc te on na tin nc ue e/ d CNB1304H is a sensor which consists of a high efficiency GaAs infrared light emitting diode and a high sensitivity Si phototransistor which are arranged together in the same direction. It detects the beginning and end of a tape based on changes in the amount of light reflected from a prism which is situated outside of the sensor. (4-R0.3) 6.0±0.15 8.3±0.3 2-φ1.2±0.15 ■ Overview ■ Electrical-Optical Characteristics Ta = 25°C ± 3°C Parameter Input Symbol Forward voltage an characteristics Reverse current Max Unit VF IF = 50 mA 1.5 V IR VR = 3 V 10.0 µA VCE = 10 V 200 nA 1 500 µA ICEO Collector current *1 IC Ma Transfer int en Output Collector-emitter cutoff current characteristics (Base open) characteristics Collector-emitter saturation voltage VCE(sat) Rise time tr Fall time tf Conditions Min VCE = 5 V, IF = 20 mA Typ 100 IF = 50 mA, IC = 0.1 mA 0.5 VCC = 10 V, IC = 0.5 mA, RL = 100 Ω 6 V µs 6 Note) 1. Input and output are handled electrically. 2. This product is not designed to withstand radiation 3. *1: IC measurement circuit *2: Switching time measurement circuit (Unit: mm) 1 2.5 1 Sig. in VCC (Input pulse) Sig. out CNB1304H 2- 1.5 50 Ω RL (Output pulse) 90% 10% tr tf tr: Rise time tf: Fall time prism Note) The part number in the parenthesis shows conventional part number. Publication date: April 2004 SHG00049BED 1 Caution for Safety ¢ This product contains Gallium Arsenide (GaAs). DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the product. Follow related laws and ordinances for disposal. The product should be excluded from general industrial waste or household garbage. 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