This product complies with the RoHS Directive (EU 2002/95/EC).
Optoisolators
CNC1S171 (ON3171)
Optoisolator
For isolated signal transmission
Features
Absolute Maximum Ratings Ta = 25°C
Parameter
Power dissipation *1
Input
(Light emitting diode)
Forward current
Pulse forward current *2
Reverse voltage
Collector-emitter voltage
(Base open)
Emitter-collector voltage
(Base open)
Output
(Photo transistor)
Collector current
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High current transfer ratio: CTR > 50%
High I/O isolation voltage: VISO = 5 000 V[rms] (min.)
Fast response: tr = 2 μs, tf = 3 μs (typ.)
Low collector-emitter cutoff current (base open): ICEO < 100 nA
UL listed (UL File No. E79920)
Collector power dissipation *3
Isolation voltage, input to output *4
ue
Total power dissipation
on
tin
Operating ambient temperature
Rating
Unit
PD
75
mW
IF
50
mA
IFP
1
A
VR
6
V
VCEO
80
V
VECO
7
V
IC
50
mA
PC
150
mW
VISO
5 000
V[rms]
PT
200
mW
Topr
–30 to +100
°C
Tstg
–55 to +125
°C
en
an
ce
/D
Input power derating ratio is 0.75 mW/°C at Ta ≥ 25°C.
Pulse width ≤ 100 μs, repeat 100 pps
Output power derating ratio is 1.5 mW/°C at Ta ≥ 25°C.
AC 1 min. RH < 60%
Ma
int
Note) *1:
*2:
*3:
*4:
isc
Storage temperature
Symbol
Note) The part number in the parenthesis shows conventional part number.
Publication date: January 2009
SHF00003CED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
CNC1S171
Electrical-Optical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Reverse current
Input
Forward voltage
characteristics
Terminal capacitance
Collector-emitter voltage
(Base open)
IR
VR = 3 V
VF
IF = 50 mA
Ct
VR = 0 V, f = 1 MHz
Min
Typ
1.35
DC current transfer ratio *1
Isolation capacitance, input to output
Transfer
Isolation resistance, input to output
characteristics
Rise time *2
Fall time *3
Note) 1. Input and output are practiced by electricity.
10
µA
1.5
V
pF
VCEO
IC = 100 mA
80
V
VECO
IE = 10 mA
7
V
ICEO
VCE = 20 V
5
CC
VCE = 10 V, f = 1 MHz
10
CTR
VCE = 10 V, IF = 5 mA
CISO
f = 1 MHz
RISO
VISO = 500 V
tr
100
nA
pF
50
600
0.7
1011
VCC = 10 V, IC = 2 mA, RL = 100
W
tf
Collector-emitter saturation voltage
Unit
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Collector-emitter capacitance
Max
15
M
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Emitter-collector voltage
Output
characteristics (Base open)
Collector-emitter cutoff current
(Base open)
Conditions
VCE(sat)
IF = 20 mA, IC = 1 mA
ue
on
tin
PD
40
3
µs
0.1
0.2
IC IF
VCC = 10 V
Ta = 25°C
50
40
30
20
10
1
10 −1
10
0
−20
20
60
100
Ambient temperature Ta (°C)
2
102
Ta = 25°C
Collector current IC (mA)
int
80
Forward current IF (mA)
isc
ce
/D
en
an
120
IF VF
60
Ma
Collector power dissipation PC , Power dissipation PD (mW)
PC , PD Ta
0
0
0.9
1.0
1.1
1.2
1.3
Forward voltage VF (V)
SHF00003CED
1.4
10 −2
10 −1
1
W
µs
*2: tr : Time required for the collector current to increase from 10% to 90% of its final value
*3: tf : Time required for the collector current to decrease from 90% to 10% of its initial value
PC
pF
2
2. This device is designed by disregarding radiation.
3. *1:
IC
CTR
× 100%
IF
160
%
10
Forward current IF (mA)
102
V
This product complies with the RoHS Directive (EU 2002/95/EC).
CNC1S171
IC VCE(sat)
102
50 mA
VCC = 5 V
25 mA
20 mA
20
15 mA
12 mA
10 mA
10
9 mA
8 mA
7 mA
6 mA
5 mA
4 mA
3 mA
2 mA
1 mA
24
32
40
Collector current IC (mA)
30 mA
IF = 50 mA
20 mA
10
10 mA
5 mA
2 mA
1
120
IF = 10 mA
1 mA
80
10 mA
5 mA
40
8
16
10 −1
ICEO Ta
10
VCE = 30 V
20 V
10 V
0.3
10 −2
40
60
80
100
100 Ω
1
Sig. in
VCC
ce
/D
an
1
tr
VCC = 10 V
Ta = 25°C
RL = 1 kΩ
tf
102
500 Ω
100 Ω
1
90%
10%
td
10
Sig. in
Sig.
out
50 Ω
10 −2
10 −1
VCC
Sig.
out
RL
1
tr
td
10
90%
10%
tf
102
Collector current IC (mA)
+10 V
+10 V
50 kΩ
en
int
Sig. out
Sig. in
50 Ω
Ma
2 mA
IF = 5 mA
102
Measurement circuit of
frequency characteristics
100 µF
16 V
10 −2
10
Sig.
out
RL
50 Ω
1
1
100
tr IC
102
10 −1
Collector current IC (mA)
isc
Ta = 25°C
10 −1
10 −2
10 −1
on
tin
Pf
10
50
ue
Ambient temperature Ta (°C)
0
Ambient temperature Ta (°C)
10
500 Ω
5 kΩ
20
0
−50
0.6
RL = 1 kΩ
Sig.
out
50 Ω
0
0.5
VCC = 10 V
Ta = 25°C
10 −1
10 −3
10 −4
−40 −20
0.4
tr IC
10
10 −1
Relative power output P (dB)
0.2
102
1
10 −3
0.1
Collector-emitter saturation voltage VCE(sat) (V)
Rise time tr (µs)
Collector-emitter cutoff current (Base open) ICEO (µA)
Collector-emitter voltage VCE (V)
0
Fall time tf (µs)
0
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0
5 mA
1 mA
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Collector current IC (mA)
40 mA
30
∆IC Ta
160
Ta = 25°C
Relative collector current ∆IC (%)
IC VCE
40
Sig. out
50 Ω
103
Frequency f (kHz)
SHF00003CED
3
4
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Pin name
1: Anode
2: Cathode
3: Emitter
4: Collector
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This product complies with the RoHS Directive (EU 2002/95/EC).
CNC1S171
Package (Unit: mm)
LCTXXN4Z0002
SHF00003CED
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any
other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any
other company which may arise as a result of the use of technical information described in this book.
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(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
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(4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company.
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20080805
