DA2JF2300L

Doc No. TT4-EA-12494 Revision. 4 Product Standards Fast Recovery Diode DA2JF2300L DA2JF2300L Silicon epitaxial planar type Unit: mm 1.25 0.35 For high speed switching circuits 0.13 2  Features 1.7 2.5  Small reverse current IR  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 1  Marking Symbol: 4A 0.5 0.7  Packaging Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)  Absolute Maximum Ratings Ta = 25 C Parameter Symbol Repetitive peak reverse voltage Non-repetitive peak reverse surge voltage Forward current (Average) *1 Non-repetitive peak forward surge current *2 Junction temperature Operating ambient temperature Storage temperature Note) VRRM VRSM IF(AV) IFSM Tj Topr Tstg 1. Cathode 2. Anode Panasonic JEITA Code Rating Unit 300 300 0.3 3.0 150 -40 to +85 -40 to +150 V V A A °C °C °C *1: temperature:Ta = 90°C, with DC wave and Alumina PC board (Board：20 ㎜×50 ㎜, Soldering land：2 ㎜×2 ㎜) *2: 50 Hz sine wave 1 cycle (Non-repetitive peak current) SMini2-F5-B SC-90A ― Internal Connection 2 1 Page 1 of 4 Established : 2010-03-31 Revised : 2013-05-29 Doc No. TT4-EA-12494 Revision. 4 Product Standards Fast Recovery Diode DA2JF2300L  Electrical Characteristics Ta = 25 C  3 C Parameter Symbol Forward voltage Reverse current Terminal capacitance Reverse recovery time Min IF = 300 mA VRRM = 300 V VR = 0 V, f = 1 MHz IF = 100 mA, IR = 200mA trr Irr = 0.25 x IR Rth(j-a) Mounted on an alumina PC board *1 Thermal resistance(ch-a) Note) Conditions VF IRRM Ct *2 Typ Max Unit 1.25 1.0 3.5 V μA pF 400 ns 160 °C/W 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031measuring methods for diodes. 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 3. Absolute frequency of lnput and output is 20 MHz 4. *1 trr measurement circuit 50 Ω 50 Ω trr D.U.T. IF 5.5 Ω 0.25 × IR IR *2 Mounted on an alumina PC board (Board：20 ㎜×50 ㎜, Soldering land：2 ㎜×2 ㎜) Page 2 of 4 Established : 2010-03-31 Revised : 2013-05-29 Doc No. TT4-EA-12494 Revision. 4 Product Standards Fast Recovery Diode DA2JF2300L Technical Data ( reference ) IF - VF IR - VR 1.E-04 Ta = 125 °C 1.E-01 Reverse current IR (A) Forward current IF (A) 1.E+00 1.E-02 85 °C 1.E-03 25 °C 1.E-04 1.E-05 1.E-06 0.0 -40 °C IR value is not exceeding 100 pA at -40 °C 1.E-05 Ta = 125 °C 1.E-06 85 °C 1.E-07 1.E-08 25 °C 1.E-09 1.E-10 0.2 0.4 0.6 0.8 1.0 1.2 Forward voltage VF (V) 0 50 100 150 200 250 300 Reverse voltage VR (V) Ct - VR Terminal capacitance Ct (pF) 4.0 Ta = 25 °C f = 1 MHz 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 10 20 30 40 Reverse voltage VR (V) Page 3 of 4 Established : 2010-03-31 Revised : 2013-05-29 Doc No. TT4-EA-12494 Revision. 4 Product Standards Fast Recovery Diode DA2JF2300L SMini2-F5-B Unit: mm 1.25±0.10 +0.05 0.35±0.05 0.13-0.02 (5°) 2.5±0.2 1.7±0.1 2 0.50±0.05 0.4±0.1 1 0 to 0.05 (0.15) 0.7±0.1 (5°)  Land Pattern (Reference) (Unit: mm) 0.9 2.4 0.9 0.9 1.1 Page 4 of 4 Established : 2010-03-31 Revised : 2013-05-29 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. 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