DB2G32600L1

Doc No. TT4-EA-15072 Revision. 1 Product Standards Schottky Barrier Diode DB2G32600L1 DB2G32600L1 For rectification Unit: mm  Features  Low forward voltage VF  Forward current (Average) IF(AV) ≦ 1.0 A rectification is possible  RoHS compliant (EU RoHS / MSL:Level 1 compliant) 0.6 1.0 2  Marking Symbol: A4  Absolute Maximum Ratings Parameter Reverse Voltage *1 Maximum Peak Reverse Voltage *1 Average Forward Current *2,3 Average Forward Current *2,4 Non-repetitive Peak Surge Forward Current Note) *1: *2: *3: *4: *5: *6: *6 *1,5 Symbol VR VRM IF(AV) IF(AV) IFSM Tj Ta Tstg Min -40 -55 Max 30 30 1.0 1.0 15 150 +150 +150 0.21 1 Unit V V A A A °C °C °C 0.1 0.47 0.21 1. Cathode 2. Anode Panasonic JEITA Code DCSP1006010-N1 — — Ta = Tj = 25℃ Squre wave : σ = 0.5 Ta ≦ 102℃, when device mounted on a FR4 PCB (25.4mm×25.4mm, 1mm thick), copper wiring (620.0mm2 area, 36μm thick). Tsp ≦ 139℃ Squre wave : Tp = 5 ms IF Tp (Waveform definition) Power derating is necessary so that Tj < 150℃. Tp Duty Cycle : σ =  Electrical Characteristics Ta = 25 °C ± 3 °C Parameter Symbol VF IR Ct trr Forward Voltage Reverse Current Terminal Capacitance Reverse Recovery Time *1 Note) 2 0.66 Embossed type (Thermo-compression sealing) : 1 000 pcs / reel (standard) Operating Junction Temperature Ambient Temperature Storage Temperature 0.47 0.065 1  Packaging T Time T Conditions IF = 1.0 A VR = 30 V VR = 10 V, f = 1 MHz IF = IR = 100 mA, Irr = 10 mA Min - - Typ 0.35 200 32 10 Max 0.44 900 - Unit V μA pF ns 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 3. *1: Measurement circuit, input pulse, output pulse for Reverse recovery time (Measurement circuit) (Input pulse) tr (2) (1) DUT (3) tp 10% VR 90% (Output pulse) t IF trr t Irr = IR ÷10 IR (1) Bias Insertion Unit (N-50BU) tp = 2 μs IF = 100 mA (2) Pulse Generator (PG-10N), RS = 50 Ω tr = 0.35 ns IR = 100 mA (3) Wave Form Analyzer (SAS-8130), Ri = 50 Ω σ = 0.05 Irr = 10 mA Page 1 of 8 Established : 2015-10-13 Revised : ####-##-## Doc No. TT4-EA-15072 Revision. 1 Product Standards Schottky Barrier Diode DB2G32600L1 Electrical Characteristics Technical Data (Reference) IF - VF / Typical Data Ct - VR / Typical Data 200 1.0E+01 (1) (2) Terminal Capacitance : Ct [pF] Forward Current : IF [A] 1.0E+00 180 1.0E-01 1.0E-02 (3) (4) 1.0E-03 (5) 160 140 120 (4) 100 80 60 40 20 0 1.0E-04 0 0.1 0.2 0.3 0.4 0.5 0 0.6 Forward Voltage : VF [V] 10 20 30 Reverse Voltage : VR [V] IR - VR / Typical Data 1.0E-01 Reverse Current : IR [A] 1.0E-02 (3) 1.0E-03 (Graph legends) (1) Ta = 150 (2) Ta = 125 (3) Ta = 85 (4) Ta = 25 (5) Ta = -40 ℃ ℃ ℃ ℃ ℃ (4) 1.0E-04 1.0E-05 1.0E-06 (5) 1.0E-07 1.0E-08 1.0E-09 0 10 20 30 Reverse Voltage : VR [V] Page 2 of 8 Established : 2015-10-13 Revised : ####-##-## Doc No. TT4-EA-15072 Revision. 1 Product Standards Schottky Barrier Diode DB2G32600L1 Electrical Characteristics Technical Data (Reference) PF(AV) - IF(AV) / Typical Data Average Forward Power Dissipation : PF(AV) [W] 0.80 Tj = 25°C (Waveform definition) IF (1) 0.60 Tp (2) (3) Time T (4) Duty Cycle : σ = 0.40 Tp T (Graph legends) (1) σ= 1.0 (2) σ= 0.8 (3) σ= 0.5 (4) σ= 0.3 0.20 0.00 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 Average Forward Current : IF(AV) [A] PR(AV) - VR / Typical Data Average Reverse Power Dissipation : PR(AV) [W] 0.0080 Tj = 25°C (Waveform definition) T 0.0060 Time (1) VR 0.0040 (2) Tp Duty Cycle : σ = Tp T (3) 0.0020 (4) (Graph legends) (1) σ= 1.0 (2) σ= 0.7 (3) σ= 0.5 (4) σ= 0.2 0.0000 0 10 20 30 Reverse Voltage : VR [V] Page 3 of 8 Established : 2015-10-13 Revised : ####-##-## Doc No. TT4-EA-15072 Revision. 1 Product Standards Schottky Barrier Diode DB2G32600L1 Electrical Characteristics Technical Data (Reference) PF(AV) - IF(AV) / Typical Data Average Forward Power Dissipation : PF(AV) [W] 0.80 Tj = 150°C (Waveform definition) IF 0.60 Tp (1) (2) (3) (4) 0.40 Time T Duty Cycle : σ = Tp T (Graph legends) (1) σ= 1.0 (2) σ= 0.8 (3) σ= 0.5 (4) σ= 0.3 0.20 0.00 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 Average Forward Current : IF(AV) [A] PR(AV) - VR / Typical Data Average Reverse Power Dissipation : PR(AV) [W] 0.30 Tj = 85°C (Waveform definition) T 0.20 Time (1) VR (2) 0.10 Tp Duty Cycle : σ = Tp T (3) (4) (Graph legends) (1) σ= 1.0 (2) σ= 0.7 (3) σ= 0.5 (4) σ= 0.2 0.00 0 10 20 30 Reverse Voltage : VR [V] Page 4 of 8 Established : 2015-10-13 Revised : ####-##-## Doc No. TT4-EA-15072 Revision. 1 Product Standards Schottky Barrier Diode DB2G32600L1  Thermal Characteristics Parameter Symbol Conditions Min Typ Max Unit Thermal Resistance, Junction to Solder Point Rth(j-sp) Ta = 25℃, in free air - 20 - °C/W Thermal Resistance, Junction to Ambient *1 Rth(j-a) Ta = 25℃, in free air - 92 - °C/W Thermal Resistance, Junction to Ambient *2 Rth(j-a) Ta = 25℃, in free air - 170 - °C/W Note) *1: Device mounted on a FR4 PCB (25.4mm×25.4mm, 1mm thick), copper wiring (620.0mm2 area, 36μm thick). *2: Device mounted on a FR4 PCB (25.4mm×25.4mm, 1mm thick), copper wiring (108.6mm2 area, 36μm thick). (Evaluation board outline) Copper wiring Copper wiring (620.0mm2) (108.6mm2) 25.4mm 25.4mm FR4 PCB FR4 PCB 25.4mm 25.4mm Thermal Characteristics Technical Data (Reference) Rth - T *1 / Typical Data Thermal Resistance : Rth [℃/W] 1000 (1) 100 (2) 10 0.001 0.01 0.1 1 10 100 1000 Applying Time : T [s] Note) *1: Single pulse measurement (Waveform definition) Power (Graph legends) Device mounted on a FR4 PCB (25.4mm×25.4mm, 1mm thick), (1) copper wiring (108.6mm2 area, 36μm thick). Device mounted on a FR4 PCB (25.4mm×25.4mm, 1mm thick), (2) copper wiring (620.0mm2 area, 36μm thick). Time Applying Time : T Page 5 of 8 Established : 2015-10-13 Revised : ####-##-## Doc No. TT4-EA-15072 Revision. 1 Product Standards Schottky Barrier Diode DB2G32600L1 Thermal Characteristics Technical Data (Reference) Effective Transient Thermal Resistance - Tp *1 / Typical Data Effective Transient Thermal Resistance [℃/W] 1000 100 (Evaluation board outline) (Waveform definition) Power (1) Tp (2) 10 (4) 0.0001 (5) 0.001 Tp Duty Cycle : σ = (6) 1 Time T (3) 0.01 0.1 1 10 100 1000 Tp [s] T (Graph legends) (1) σ = 0.5 (2) σ = 0.2 (3) σ = 0.1 (4) σ = 0.05 σ = 0.02 (5) (6) σ= 0 Effective Transient Thermal Resistance - Tp *2 / Typical Data Effective Transient Thermal Resistance [℃/W] 1000 (Evaluation board outline) (Waveform definition) 100 Power (1) T (2) (3) 10 0.001 Time Duty Cycle : σ = (4) (5) (6) 1 0.0001 0.01 0.1 1 Tp [s] Note) Tp 10 100 1000 Tp T (Graph legends) (1) σ = 0.5 (2) σ = 0.2 (3) σ = 0.1 (4) σ = 0.05 (5) σ = 0.02 σ= 0 (6) *1: Device mounted on a FR4 PCB (25.4mm×25.4mm, 1mm thick), copper wiring (108.6mm2 area, 36μm thick). *2: Device mounted on a FR4 PCB (25.4mm×25.4mm, 1mm thick), copper wiring (620.0mm2 area, 36μm thick). Page 6 of 8 Established : 2015-10-13 Revised : ####-##-## Doc No. TT4-EA-15072 Revision. 1 Product Standards Schottky Barrier Diode DB2G32600L1 Power Derating Technical Data (Reference) IF(AV) - Ta *1 / Typical Data IF(AV) - Ta *2 / Typical Data 1.6 1.6 Tj =150°C (1) 1.4 1.4 Average Forward Current : IF(AV) [A] Average Forward Current : IF(AV) [A] Tj =150°C (1) (2) 1.2 (3) 1.0 (4) 0.8 0.6 0.4 0.2 0.0 (2) 1.2 (3) 1.0 (4) 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 150 Ambient Temperature : Ta [℃] 0 25 50 (Graph legends) (1) σ = 1.0 (2) σ = 0.8 (3) σ = 0.5 (4) σ = 0.3 1.6 Tj =150°C 1.4 Average Forward Current : IF(AV) [A] 100 (2) 1.2 150 (Waveform definition) IF Tp T Duty Cycle : σ = (3) 1.0 Time Tp T Note) *1: Device mounted on a FR4 PCB (25.4mm×25.4mm, 1mm thick), (4) 0.8 125 Ambient Temperature : Ta [℃] IF(AV) - Tsp / Typical Data (1) 75 copper wiring (108.6mm2 area, 36μm thick). (Evaluation board outline) 0.6 0.4 0.2 *2: Device mounted on a FR4 PCB (25.4mm×25.4mm, 1mm thick), copper wiring (620.0mm2 area, 36μm thick). 0.0 0 25 50 75 100 125 150 (Evaluation board outline) Solder Point Temperature : Tsp [℃] Page 7 of 8 Established : 2015-10-13 Revised : ####-##-## Doc No. TT4-EA-15072 Revision. 1 Product Standards Schottky Barrier Diode DB2G32600L1 DCSP1006010-N1 Unit: mm 0.60±0.05 1 0.47±0.03 1 0.47±0.03  Land Pattern (Reference) 0.21±0.03 0.66 0.065±0.040 0.10±0.02 2 0.21±0.03 1.00±0.05 2 Unit: mm 0.21 0.66 0.21 0.47 Page 8 of 8 Established : 2015-10-13 Revised : ####-##-## Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. 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