Doc No. TT4-ZZ-02051
Revision. 0
Product Standards
Schottky Barrier Diode
DB2G60800L1
DB2G60800L1
For rectification
Unit: mm
Features
Low forward voltage VF
Forward current (Average) IF(AV) ≦ 1.0 A rectification is possible
RoHS compliant
(EU RoHS / MSL:Level 1 compliant)
0.6
1.0
2
Marking Symbol: D7
Embossed type (Thermo-compression sealing) : 1 000 pcs / reel (standard)
Absolute Maximum Ratings
Parameter
Reverse Voltage *1
Maximum Peak Reverse Voltage
Average Forward Current *2,3
Average Forward Current *2,4
*1
Non-repetitive Peak Surge Forward Current *1,5
Operating Junction Temperature
Ambient Temperature
Storage Temperature
Note)
*1:
*2:
*3:
*4:
*5:
*6:
*6
Symbol
VR
VRM
IF(AV)
IF(AV)
IFSM
Tj
Ta
Tstg
Min
-40
-55
Max
60
60
1.0
1.0
10
150
+150
+150
2
V
V
A
A
A
°C
°C
°C
0.21
1
Unit
0.1
0.47
0.21
1. Cathode
2. Anode
Panasonic
JEITA
Code
DCSP1006010-N1
—
—
Ta = Tj = 25℃
Square wave : σ = 0.5
Ta ≦ 85℃, when device mounted on a FR4 PCB (25.4mm×25.4mm, 1mm thick), (620.0mm 2 area, 36μm thick).
Solder Point Temperature : Tsp ≦ 135℃
Square wave : Tp = 5 ms
IF
Tp
(Waveform definition)
Power derating is necessary so that Tj < 150℃.
Tp
Duty Cycle : σ =
Electrical Characteristics Ta = 25 °C ± 3 °C
Parameter
Symbol
VF
IR
Ct
trr
Forward Voltage
Reverse Current
Terminal Capacitance
Reverse Recovery Time *1
Note)
0.47
0.66 0.065
1
Packaging
T
Time
T
Conditions
IF = 1.0 A
VR = 60 V
VR = 10 V, f = 1 MHz
IF = IR = 100 mA, Irr = 10 mA
Min
-
-
Typ
0.6
3
20
6.6
Max
0.68
40
-
Unit
V
μA
pF
ns
1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.).
Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment.
3. *1: Measurement circuit, input pulse, output pulse for Reverse recovery time
(Measurement circuit)
(Input pulse)
tr
(2)
(1)
DUT
(3)
tp
10%
VR
90%
(Output pulse)
t
trr
IF
t
Irr = IR ÷10
IR
(1) Bias Insertion Unit (N-50BU)
tp = 2 μs
IF = 100 mA
(2) Pulse Generator (PG-10N), RS = 50 Ω
tr = 0.35 ns
IR = 100 mA
(3) Wave Form Analyzer (SAS-8130), Ri = 50 Ω
σ = 0.05
Irr = 10 mA
Page 1 of 8
Established : 2018-03-08
Revised : ####-##-##
Doc No. TT4-ZZ-02051
Revision. 0
Product Standards
Schottky Barrier Diode
DB2G60800L1
Electrical Characteristics Technical Data (Reference)
IF - VF / Typical Data
Ct - VR / Typical Data
1.0E+01
200
(1)
(2)
Terminal Capacitance : Ct [pF]
Forward Current : IF [A]
1.0E+00
180
1.0E-01
1.0E-02
(3)
(4)
1.0E-03
(5)
160
140
(4)
120
100
80
60
40
20
0
1.0E-04
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
Forward Voltage : VF [V]
0
10
20
30
40
Reverse Voltage : VR [V]
IR - VR / Typical Data
(Graph legends)
(1)
Ta = 150
(2)
Ta = 125
(3)
Ta = 85
(4)
Ta = 25
(5)
Ta = -40
1.0E-01
1.0E-02
Reverse Current : IR [A]
1.0E-03
℃
℃
℃
℃
℃
(2)
1.0E-04
(3)
1.0E-05
1.0E-06
(4)
1.0E-07
(5)
1.0E-08
1.0E-09
1.0E-10
0
10
20
30
40
50
60
Reverse Voltage : VR [V]
Page 2 of 8
Established : 2018-03-08
Revised : ####-##-##
Doc No. TT4-ZZ-02051
Revision. 0
Product Standards
Schottky Barrier Diode
DB2G60800L1
Electrical Characteristics Technical Data (Reference)
PF(AV) - IF(AV) / Typical Data
Average Forward Power Dissipation : PF(AV) [W]
1.40
Tj = 25°C
(Waveform definition)
1.20
IF
(1)
1.00
Tp
(2)
(3)
0.80
Time
T
(4)
Duty Cycle : σ =
Tp
T
0.60
0.40
(Graph legends)
(1)
σ= 1.0
(2)
σ= 0.8
(3)
σ= 0.5
(4)
σ= 0.3
0.20
0.00
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
Average Forward Current : IF(AV) [A]
PR(AV) - VR / Typical Data
Average Reverse Power Dissipation : PR(AV) [W]
0.00020
Tj = 25°C
(Waveform definition)
0.00015
T
(1)
VR
Time
Tp
(2)
Duty Cycle : σ =
0.00010
Tp
T
(3)
0.00005
(4)
(Graph legends)
(1)
σ= 1.0
(2)
σ= 0.7
(3)
σ= 0.5
(4)
σ= 0.2
0.00000
0
10
20
30
40
50
60
Reverse Voltage : VR [V]
Page 3 of 8
Established : 2018-03-08
Revised : ####-##-##
Doc No. TT4-ZZ-02051
Revision. 0
Product Standards
Schottky Barrier Diode
DB2G60800L1
Electrical Characteristics Technical Data (Reference)
PF(AV) - IF(AV) / Typical Data
Average Forward Power Dissipation : PF(AV) [W]
1.40
Tj = 150°C
1.30
(Waveform definition)
1.20
1.10
IF
Tp
1.00
(1)
0.90
0.70
Duty Cycle : σ =
(3)
0.60
Time
T
(2)
0.80
Tp
T
(4)
0.50
0.40
(Graph legends)
(1)
σ= 1.0
(2)
σ= 0.8
(3)
σ= 0.5
(4)
σ= 0.3
0.30
0.20
0.10
0.00
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
Average Forward Current : IF(AV) [A]
PR(AV) - VR / Typical Data
Average Reverse Power Dissipation : PR(AV) [W]
0.20
Tj = 125°C
(Waveform definition)
T
0.15
VR
0.10
(1)
Time
Tp
Duty Cycle : σ =
Tp
T
(2)
0.05
(3)
(4)
(Graph legends)
(1)
σ= 1.0
(2)
σ= 0.7
(3)
σ= 0.5
(4)
σ= 0.2
0.00
0
10
20
30
40
50
60
Reverse Voltage : VR [V]
Page 4 of 8
Established : 2018-03-08
Revised : ####-##-##
Doc No. TT4-ZZ-02051
Revision. 0
Product Standards
Schottky Barrier Diode
DB2G60800L1
Thermal Characteristics
Parameter
Thermal Resistance, Junction to Solder Point
Symbol
Conditions
Min
Typ
Max
Unit
Rth(j-sp)
Ta = 25℃, in free air
-
20
-
°C/W
Thermal Resistance, Junction to Ambient
*1
Rth(j-a)
Ta = 25℃, in free air
-
92
-
°C/W
Thermal Resistance, Junction to Ambient
*2
Rth(j-a)
Ta = 25℃, in free air
-
170
-
°C/W
Note)
*1: Device mounted on a FR4 PCB (25.4mm×25.4mm, 1mm thick), copper wiring (620.0mm 2 area, 36μm thick).
*2: Device mounted on a FR4 PCB (25.4mm×25.4mm, 1mm thick), copper wiring (108.6mm 2 area, 36μm thick).
(Evaluation board outline)
Copper wiring
Copper wiring
(620.0mm2)
(108.6mm2)
25.4mm
FR4 PCB
25.4mm
FR4 PCB
25.4mm
25.4mm
Thermal Characteristics Technical Data (Reference)
Rth - T *1 / Typical Data
Thermal Resistance : Rth [℃/W]
1000
(1)
100
(2)
10
0.001
0.01
0.1
1
10
100
1000
Applying Time : T [s]
Note)
*1: Single pulse measurement
(Waveform definition)
Power
(Graph legends)
Device mounted on a FR4 PCB (25.4mm×25.4mm, 1mm thick),
(1)
copper wiring (108.6mm2 area, 36μm thick).
Device mounted on a FR4 PCB (25.4mm×25.4mm, 1mm thick),
(2)
copper wiring (620.0mm2 area, 36μm thick).
Time
Applying Time : T
Page 5 of 8
Established : 2018-03-08
Revised : ####-##-##
Doc No. TT4-ZZ-02051
Revision. 0
Product Standards
Schottky Barrier Diode
DB2G60800L1
Thermal Characteristics Technical Data (Reference)
Effective Transient Thermal Resistance - Tp *1 / Typical Data
Effective Transient Thermal Resistance [℃/W]
1000
(Evaluation board outline)
(Waveform definition)
100
Power
(1)
Tp
(2)
10
(4)
(6)
1
0.001
Tp
Duty Cycle : σ =
(5)
0.0001
Time
T
(3)
0.01
0.1
1
10
100
1000
T
(Graph legends)
(1)
σ = 0.5
(2)
σ = 0.2
(3)
σ = 0.1
(4)
σ = 0.05
(5)
σ = 0.02
(6)
σ= 0
Tp [s]
Effective Transient Thermal Resistance - Tp *2 / Typical Data
Effective Transient Thermal Resistance [℃/W]
1000
(Evaluation board outline)
(Waveform definition)
100
Power
Tp
(1)
T
(2)
(3)
10
Duty Cycle : σ =
(4)
(5)
(6)
1
0.0001
0.001
Time
0.01
0.1
1
10
100
1000
Tp
T
(Graph legends)
(1)
σ = 0.5
(2)
σ = 0.2
(3)
σ = 0.1
(4)
σ = 0.05
(5)
σ = 0.02
(6)
σ= 0
Tp [s]
Note)
*1: Device mounted on a FR4 PCB (25.4mm×25.4mm, 1mm thick), copper wiring (108.6mm 2 area, 36μm thick).
*2: Device mounted on a FR4 PCB (25.4mm×25.4mm, 1mm thick), copper wiring (620.0mm 2 area, 36μm thick).
Page 6 of 8
Established : 2018-03-08
Revised : ####-##-##
Doc No. TT4-ZZ-02051
Revision. 0
Product Standards
Schottky Barrier Diode
DB2G60800L1
Power Derating Technical Data (Reference)
IF(AV) - Ta *1 / Typical Data
IF(AV) - Ta *2 / Typical Data
1.6
1.6
Tj =150°C
(1)
1.4
1.4
Average Forward Current : IF(AV) [A]
Average Forward Current : IF(AV) [A]
Tj =150°C
(1)
(2)
1.2
(3)
1.0
(4)
0.8
0.6
0.4
0.2
0.0
(2)
1.2
(3)
1.0
(4)
0.8
0.6
0.4
0.2
0.0
0
25
50
75
100
125
150
Ambient Temperature : Ta [℃]
0
25
50
(Graph legends)
(1)
σ = 1.0
(2)
σ = 0.8
(3)
σ = 0.5
(4)
σ = 0.3
1.6
Tj =150°C
1.4
Average Forward Current : IF(AV) [A]
100
125
150
Ambient Temperature : Ta [℃]
IF(AV) - Tsp / Typical Data
(1)
75
(2)
1.2
(Waveform definition)
IF
Tp
T
Duty Cycle : σ =
(3)
Time
Tp
T
1.0
Note)
*1: Device mounted on a FR4 PCB (25.4mm×25.4mm, 1mm thick),
(4)
0.8
copper wiring (108.6mm2 area, 36μm thick).
(Evaluation board outline)
0.6
0.4
0.2
*2: Device mounted on a FR4 PCB (25.4mm×25.4mm, 1mm thick),
copper wiring (620.0mm2 area, 36μm thick).
0.0
0
25
50
75
100
125
150
(Evaluation board outline)
Solder Point Temperature : Tsp [℃]
Page 7 of 8
Established : 2018-03-08
Revised : ####-##-##
Doc No. TT4-ZZ-02051
Revision. 0
Product Standards
Schottky Barrier Diode
DB2G60800L1
DCSP1006010-N1
Unit: mm
0.60±0.05
1
0.47±0.03
1
0.47±0.03
Land Pattern (Reference)
0.21±0.03
0.66
0.065±0.040
0.10±0.02
2
0.21±0.03
1.00±0.05
2
Unit: mm
0.21
0.66
0.21
0.47
Page 8 of 8
Established : 2018-03-08
Revised : ####-##-##
Request for your special attention and precautions
in using the technical information and semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the
laws and regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit
examples of the products. No license is granted in and to any intellectual property right or other right owned by
Panasonic Corporation or any other company. Therefore, no responsibility is assumed by our company as to the
infringement upon any such right owned by any other company which may arise as a result of the use of technical
information de-scribed in this book.
(3) The products described in this book are intended to be used for general applications (such as office equipment,
communications equipment, measuring instruments and household appliances), or for specific applications as expressly
stated in this book.
Please consult with our sales staff in advance for information on the following applications, moreover please exchange
documents separately on terms of use etc.: Special applications (such as for in-vehicle equipment, airplanes, aerospace,
automotive equipment, traffic signaling equipment, combustion equipment, medical equipment and safety devices) in
which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly
jeopardize life or harm the human body.
Unless exchanging documents on terms of use etc. in advance, it is to be understood that our company shall not be held
responsible for any damage incurred as a result of or in connection with your using the products described in this book
for any special application.
(4) The products and product specifications described in this book are subject to change without notice for modification
and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most upto-date Product Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating
conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed
the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down
and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design,
arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages,
for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors
(ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. We do
not guarantee quality for disassembled products or the product re-mounted after removing from the mounting board.
When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed
time since first opening the packages.
(7) When reselling products described in this book to other companies without our permission and receiving any claim of
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company.
No.010618