DB2U31600L

Doc No. TT4-EA-14135 Revision. 2 Product Standards Schottky Barrier Diode DB2U31600L DB2U31600L Silicon epitaxial planar type Unit: mm For small current rectification DB27316 in USSMini2 type package 0.6 0.13 2  Features 0.85 1.0  Low forward voltage VF  Short reverse recovery time trr  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)  Marking Symbol:15 1 0.2  Packaging Embossed type (Thermo-compression sealing) : 10 000 pcs / reel (standard) 1. Cathode 2. Anode Panasonic JEITA Code  Absolute Maximum Ratings Ta = 25 C Parameter Symbol Reverse voltage Repetitive peak reverse voltage Forward current (Average) Peak forward current Non-repetitive peak forward surge current Junction temperature Operating ambient temperature Storage temperature *1 VR VRRM IF(AV) IFM IFSM Tj Topr Tstg Rating Unit 30 30 100 300 1 125 -40 to +85 -55 to +125 V V mA mA A °C °C °C Note: *1 The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive) 0.38 USSMini2-F2-B SC-116A SOD-923 Internal Connection 2 1 Page 1 of 4 Established : 2012-03-07 Revised : 2013-12-13 Doc No. TT4-EA-14135 Revision. 2 Product Standards Schottky Barrier Diode DB2U31600L  Electrical Characteristics Ta = 25 C  3 C Parameter Symbol 　Forward voltage 　Reverse current Terminal capacitance VF IR Ct Reverse recovery time *1 trr Conditions Min Typ Max IF = 100 mA VR = 30 V VR = 10 V, f = 1 MHz IF = IR = 100 mA, Irr = 0.1× IR RL = 100  0.55 15 Unit 2 V μA pF 0.8 ns Note: 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring methods for Diodes. 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 3. Absolute frequency of input and output is 250 MHz. 4. *1 trr test circuit Input Pulse Bias Application Unit (N-50BU) tp tr 10% A Pulse Generator (PG-10N) Rs = 50 Ω VR Wave Form Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 μs tr = 0.35 ns δ = 0.05 Output Pulse t IF trr t Irr = 0.1 × IR IF = 100 mA IR = 100 mA RL = 100 Ω Page 2 of 4 Established : 2012-03-07 Revised : 2013-12-13 Doc No. TT4-EA-14135 Revision. 2 Product Standards Schottky Barrier Diode DB2U31600L Technical Data ( reference ) IF - VF IR - VR 1.0E-02 1.0E-01 Ta = 125 ℃ Rewverse current IR (A) Forward current IF (A) 1.0E+00 85 ℃ 1.0E-02 1.0E-03 25 ℃ 1.0E-04 -40 ℃ 1.0E-05 0.0 Ta = 125℃ 1.0E-03 1.0E-04 85 ℃ 1.0E-05 1.0E-06 25 ℃ 1.0E-07 1.0E-08 -40 ℃ 0.2 0.4 0.6 0.8 1.0 Forward voltage VF (V) 1.0E-09 0 5 10 15 20 Reverse voltage VR (V) 25 30 Terminal capacitance Ct (pF) Ct - VR 10 Ta = 25 ℃ f = 1MHz 8 6 4 2 0 0 5 10 15 20 Reverse voltage VR (V) 25 30 Page 3 of 4 Established : 2012-03-07 Revised : 2013-12-13 Doc No. TT4-EA-14135 Revision. 2 Product Standards Schottky Barrier Diode DB2U31600L USSMini2-F2-B Unit: mm 0.60±0.05 +0.05 0.13-0.02 (5°) 1.00±0.05 0.85±0.05 2 1 0.075±0.050 +0.05 0.20-0.02 0 to 0.02 0.15 max +0.02 0.38-0.03 (5°)  Land Pattern (Reference) (Unit: mm) 0.3 1.0 0.3 0.4 Page 4 of 4 Established : 2012-03-07 Revised : 2013-12-13 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. 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