DB3J316K0L

DB3J316K0L

  • 厂商:

    NAIS(松下)

  • 封装:

    SC-85

  • 描述:

    Diode Schottky 30V 100mA Surface Mount SMini3-F2-B

  • 详情介绍
  • 数据手册
  • 价格&库存
DB3J316K0L 数据手册
DB3J316K Silicon epitaxial planar type Unit: mm For small current rectification DB3X316K in SMini3 type package  Features  Short reverse recovery time trr  Low forward voltage VF  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)  Marking Symbol: 5E  Packaging DB3J316K0L Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard) 1: Anode 2: N.C. 3: Cathode Panasonic JEITA Code  Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit VR 30 V Repetitive peak reverse voltage VRRM 30 V Forward current (Average) IF(AV) 100 mA Peak forward current IFM 300 mA Non-repetitive peak forward surge current *1 IFSM 1 A Tj 125 °C Operating ambient temperature Topr –40 to +85 °C Storage temperature Tstg –55 to +125 °C Reverse voltage Junction temperature SMini3-F2-B SC-85  3 1 2 Note) *1: 50 Hz sine wave 1 cycle (Non-repetitive peak current)  Electrical Characteristics Ta = 25°C±3°C Parameter Symbol Forward voltage Conditions VF IF = 100 mA Min Reverse current IR VR = 30 V Terminal capacitance Ct VR = 10 V, f = 1 MHz Reverse recovery time *1 trr IF = IR =100 mA, Irr = 0.1 × IR , RL = 100 Ω Typ Max Unit 0.55 V 15 mA 2 pF 0.8 ns Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 3. Absolute frequency of input and output is 250 MHz *1: trr measurement circuit Input Pulse Bias Application Unit (N-50BU) tp tr 10% A Pulse Generator (PG-10N) Rs = 50 Ω Publication date: May 2013 VR 90% tp = 2 µs tr = 0.35 ns δ = 0.05 Wave Form Analyzer (SAS-8130) Ri = 50 Ω Ver. CED Output Pulse t IF trr t Irr = 0.1 × IR IF = 100 mA IR = 100 mA RL = 100 Ω 1 DB3J316K DB3J316K_ IF-VF IR  VR Pulse test Ta = 125°C 10−5 10−7 25°C 0.2 0.4 −40°C 10−8 −40°C 0 25°C 10−6 85°C 10−4 85°C 10−4 100°C 10−3 100°C Reverse current IR (A) Forward current IF (A) Ta = 125°C 10−2 10−5 10 10−3 10−1 Ct  VR 10−2 0.6 0.8 Forward voltage VF (V) 1.0 10−9 0 10 20 30 Reverse voltage VR (V) Ver. CED Ta = 25°C Terminal capacitance Ct (pF) 1 DB3J316K_Ct-VR DB3J316K_ IR-VR IF  VF 8 6 4 2 0 0 10 20 30 Reverse voltage VR (V) 2 DB3J316K SMini3-F2-B Unit: mm  Land Pattern (Reference) (Unit: mm) Ver. CED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information de-scribed in this book. (3) The products described in this book are intended to be used for general applications (such as office equipment, communications equipment, measuring instruments and household appliances), or for specific applications as expressly stated in this book. Please consult with our sales staff in advance for information on the following applications, moreover please exchange documents separately on terms of use etc.: Special applications (such as for in-vehicle equipment, airplanes, aerospace, automotive equipment, traffic signaling equipment, combustion equipment, medical equipment and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. Unless exchanging documents on terms of use etc. in advance, it is to be understood that our company shall not be held responsible for any damage incurred as a result of or in connection with your using the products described in this book for any special application. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most upto-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. We do not guarantee quality for disassembled products or the product re-mounted after removing from the mounting board. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. (7) When reselling products described in this book to other companies without our permission and receiving any claim of request from the resale destination, please understand that customers will bear the burden. (8) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company. No.010618 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Panasonic: DB3J316K0L
DB3J316K0L
物料型号为DB3J316K,这是松下公司生产的一种硅外延平面型整流器件,用于小电流整流。

器件简介包括短反向恢复时间、低正向电压等特点,并且符合无卤素/RoHS标准。


引脚分配如下: 1. 阳极(Anode) 2. 空脚(N.C.) 3. 阴极(Cathode)

参数特性包括: - 反向电压(VR):30V - 重复峰值反向电压(VRRM):30V - 平均正向电流(IF(AV)):100mA - 峰值正向电流(IM):300mA - 非重复峰值正向浪涌电流(IFSM):1A - 结温(Tj):125℃ - 工作环境温度(Toper):-40至85℃ - 存储温度(Tstg):-55至125℃

功能详解中提到,此器件具有短反向恢复时间和低正向电压的特点。

应用信息中未提供具体应用场景,但根据其特性,可能适用于需要快速响应和低功耗整流的应用。


封装信息为SMini3型封装,DB3J316K0L为凸起型(热压缩密封),标准包装为每卷3000片。

封装尺寸图提供了详细的尺寸信息。

此外,还有关于使用技术和半导体产品时需注意的事项,包括遵守出口法规、不提供任何形式的知识产权许可、产品规格的变更通知、设计时的注意事项等。
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