DB3S406F0L

Doc No. TT4-EA-12479 Revision. 2 Product Standards Schottky Barrier Diode DB3S406F0L DB3S406F0L Silicon epitaxial planar type Unit: mm For high speed switching circuits 1.6 0.26 „ Features 0.13 3 0.85 1.6 y Small reverse current IR y Short reverse recovery time trr y Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 1 2 „ Marking Symbol: 4V 0.7 (0.5) (0.5) 1.0 „ Basic Part Number : Dual DB2S406 (Series) 1. Anode1 2. Cathode2 „ Packaging Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard) „ Absolute Maximum Ratings Ta = 25 °C Parameter Symbol VR VRRM Reverse voltage Repetitive peak reverse voltage Forward current Peak forward current Non-repetitive peak forward surge current *1 Junction temperature Operating ambient temperature Storage temperature Note: Singie Series Singie Series Singie Series 3. Cathode1 Anode2 IF IFM IFSM Tj Topr Tstg Panasonic JEITA Code Rating Unit 40 40 100 75 300 225 1 0.75 125 -40 to +85 -55 to +125 V V mA mA mA mA A A °C °C °C SSMini3-F3-B SC-89 SOT-490 Internal Connection 3 1 2 *1 The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive) Page 1 of 4 Established : 2010-03-24 Revised : 2013-12-13 Doc No. TT4-EA-12479 Revision. 2 Product Standards Schottky Barrier Diode DB3S406F0L „ Electrical Characteristics Ta = 25 °C ± 3 °C Parameter Symbol VF IR Ct Forward voltage Reverse current Terminal capacitance Reverse recovery time Note: *1 trr Conditions Min IF = 100 mA VR = 40 V VR = 10 V, f = 1 MHz IF = IR = 100 mA, Irr = 10 mA RL = 100 Ω Typ Max Unit 0.6 5 2.2 V µA pF 0.9 ns 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring methods for Diodes. 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 3. Absolute frequency of input and output is 250 MHz. 4. *1 trr test circuit Input Pulse Bias Application Unit (N-50BU) tp tr 10% A Pulse Generator (PG-10N) Rs = 50 Ω VR Wave Form Analyzer (SAS-8130) Ri = 50 Ω Output Pulse t IF trr 90% tp = 2 µs tr = 0.35 ns δ = 0.05 IF = 100 mA IR = 100 mA RL = 100 Ω t Irr = 10 mA Page 2 of 4 Established : 2010-03-24 Revised : 2013-12-13 Doc No. TT4-EA-12479 Revision. 2 Product Standards Schottky Barrier Diode DB3S406F0L Technical Data ( reference ) IF - VF IR - VR 1.0E-02 1.0E-03 Ta = 125 ℃ 1.0E-01 Reverse current (A) Forward voltage IF (A) 1.0E+00 85 ℃ 1.0E-02 1.0E-03 25 ℃ 1.0E-04 -40 ℃ Ta = 125 ℃ 1.0E-04 1.0E-05 85 ℃ 1.0E-06 25 ℃ 1.0E-07 -40 ℃ 1.0E-08 1.0E-09 1.0E-10 1.0E-05 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Forward voltage VF (V) 0 10 20 30 Reverse voltage VR (V) 40 Ct - VR Terminal capacitance Ct (pF) 16 Ta = 25 ℃ f = 1 MHz 14 12 10 8 6 4 2 0 0 10 20 30 40 Reverse voltage VR (V) Page 3 of 4 Established : 2010-03-24 Revised : 2013-12-13 Doc No. TT4-EA-12479 Revision. 2 Product Standards Schottky Barrier Diode DB3S406F0L SSMini3-F3-B Unit: mm +0.05 1.60-0.03 +0.05 0.13-0.02 +0.05 0.26-0.02 (5°) 2 (0.5) (0.5) 1.00±0.05 0.375±0.050 1 1.60±0.05 +0.05 0.85-0.03 3 0 to 0.1 (0.45) +0.05 0.70-0.03 (5°) „ Land Pattern (Reference) (Unit: mm) 1.4 0.6 0.6 1.0 Page 4 of 4 Established : 2010-03-24 Revised : 2013-12-13 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. 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