DB4X501K0R

Doc No. TT4-EA-12390 Revision. 3 Product Standards Schottky Barrier Diode DB4X501K0R DB4X501K0R Silicon epitaxial planar type Unit: mm For high speed switching circuits DB2J501 in Mini4 type package 2.9 (0.95)(0.95)  Features 4 0.13 3 1.5 2.8  Short reverse recovery time trr  Low terminal capacitance Ct  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 1 2 0.65 (0.2) 1.9  Marking Symbol:4H 0.4 1.1  Basic Part Number : 1. Anode 1 2. Anode 2 Dual DB2J501 (Parallel) 3. Cathode 2 4. Cathode 1  Packaging Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)  Absolute Maximum Ratings Ta = 25 C Parameter Symbol Reverse voltage Repetitive peak reverse voltage Non-repetitive peak Single forward surge current * 2 Double *1 Single Peak forward current Double *1 Single Forward current (Average) Double *1 Junction temperature Operating ambient temperature Storage temperature VR VRRM IFSM IFM IF(AV) Tj Topr Tstg Rating Unit 50 50 1 0.75 300 225 200 150 125 -40 to +85 -55 to +125 V V Panasonic JEITA Code Mini4-G4-B SC-61AB TO-253/SOT-143 Internal Connection 4 3 1 2 A mA mA °C °C °C Note: *1 Value of each diode in series diodes used. *2 50 Hz sine wave 1 cycle (Non-repetitive peak current) Page 1 of 4 Established : 2010-02-22 Revised : 2013-12-13 Doc No. TT4-EA-12390 Revision. 3 Product Standards Schottky Barrier Diode DB4X501K0R  Electrical Characteristics Ta = 25 C  3 C Parameter Symbol VF1 VF2 IR Ct Forward voltage Reverse current Terminal capacitance Reverse recovery time *1 trr Conditions Min Typ Max 0.36 0.55 200 IF = 30 mA IF = 200 mA VR = 50 V VR = 10 V, f = 1 MHz IF = IR = 100 mA Irr = 10 mA, RL = 100  Unit V 4 μA pF 1.6 ns Note: 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 3. Absolute frequency of input and output is 1 000 MHz. 4. *1 : trr measurement circuit Input Pulse Bias Application Unit (N-50BU) tp tr 10% A Pulse Generator (PG-10N) Rs = 50 Ω VR Wave Form Analyzer (SAS-8130) Ri = 50 Ω Output Pulse t IF trr 90% tp = 2 μs tr = 0.35 ns δ = 0.05 IF = 100 mA IR = 100 mA RL = 100 Ω t Irr = 10 mA Page 2 of 4 Established : 2010-02-22 Revised : 2013-12-13 Doc No. TT4-EA-12390 Revision. 3 Product Standards Schottky Barrier Diode DB4X501K0R Technical Data ( reference ) IR - VR IF - VF 1.0E-01 1.0E+00 100 ℃ 1.0E-01 Reverse current IR (A) Forward current IF (A) 1.0E-02 125 ℃ 100 ℃ 1.0E-02 85 ℃ 1.0E-03 25 ℃ 1.0E-04 1.0E-03 85 ℃ 1.0E-04 1.0E-05 25 ℃ 1.0E-06 1.0E-07 -40 ℃ 1.0E-08 -40 ℃ 1.0E-05 0.0 Ta = 125 ℃ 1.0E-09 0.1 0.2 0.3 0.4 0.5 0.6 Forward voltage VF (V) 0 10 20 30 40 Reverse voltage VR (V) 50 Ct - VR Terminal capacitance (pF) 24 Ta = 25 ℃ f = 1 MHz 20 16 12 8 4 0 0 10 20 30 Reverse voltage VR (V) 40 Page 3 of 4 Established : 2010-02-22 Revised : 2013-12-13 Doc No. TT4-EA-12390 Revision. 3 Product Standards Schottky Barrier Diode DB4X501K0R Mini4-G4-B Unit: mm +0.20 2.90-0.05 +0.05 0.13-0.02 (0.95) (0.95) +0.10 0.40-0.05 +0.10 0.65-0.05 (6°) +0.2 0.4±0.2 (0.2) 2 (0.65) 1 2.8-0.3 +0.25 3 1.50-0.05 4 1.9±0.1 +0.3 1.1-0.1 +0.2 0 to 0.1 1.1-0.1 (8°)  Land Pattern (Reference) (Unit: mm) 1.0 2.4 1.9 1.0 Page 4 of 4 Established : 2010-02-22 Revised : 2013-12-13 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. 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