DE2S06800L

Doc No. TT4-EA-12679 Revision. 4 Product Standards Zener Diode DE2S06800L DE2S06800L Silicon epitaxial planar type Unit: mm 0.8 For ESD protection 0.13 2  Features 1.2 1.6  High ESD  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)  Marking Symbol:E2 1 0.3  Packaging Embossed type (Thermo-compression sealing) 0.6 3 000 pcs / reel (standard) 1. Cathode 2. Anode  Absolute Maximum Ratings Ta = 25 C Parameter Symbol Total power dissipation *1 *2 Electrostatic discharge Junction temperature Operating ambient temperature Storage temperature PT ESD Tj Topr Tstg Rating Unit 150 ±30 150 -40 to +85 -55 to +150 mW kV °C °C °C Panasonic JEITA Code SSMini2-F5-B SC-79 SOD-523 Internal Connection 2 Note) *1: Mounted on glass epoxy print board. ( 45 mm x 45 mm x 1 mm) Solder in ( 0.8 mm x 0.6 mm) *2: Test method:IEC61000_4_2(C = 150 pF,R = 330 , Contact discharge:10 times) 1  Electrical Characteristics Ta = 25 C  3 C Parameter Symbol Zener voltage *1,*2 Reverse current Terminal capacitance Temperature coefficient of zener voltage *3 VZ IR Ct SZ Conditions IZ = 1 mA VR = 4 V VR = 0 V, f = 1 MHz IZ = 1 mA Min Typ Max 6.46 7.14 0.5 50 3.0 Unit V μA pF mV/°C Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring methods for Diodes. 2. *1: The temperature must be controlled 25°C for VZ mesurement. VZ value measured at other temperature must be adjusted to VZ (25°C) *2: VZ guaranted 20 ms after current flow. *3: Tj = 25°C to 150°C Page 1 of 4 Established : 2010-07-12 Revised : 2013-09-25 Doc No. TT4-EA-12679 Revision. 4 Product Standards Zener Diode DE2S06800L Technical Data ( reference ) PT - Ta IF - VF 1.E+00 Mounted on glass epoxy print board. Board size : 45 mm × 45 mm x 1 mm Solder in : 0.8 mm x 0.6 mm 150 100 50 1.E-02 1.E-03 1.E-04 1.E-05 1.E-06 0.0 0 0 20 40 60 Ta = 25 °C 1.E-01 Forward current IF (A) Total power dissipation PT (mW) 200 80 100 120 140 160 180 200 0.2 0.4 0.6 0.8 1.0 1.2 Forward voltage VF (V) Ambient temperature Ta (°C) IR - VR IZ - VZ 1.E-06 1.E-01 Ta = 25 °C 1.E-07 25 °C Reverse current IR (A) Zener current IZ (A) 1.E-02 Ta = 125 °C 1.E-03 -40 °C 1.E-04 85 °C 1.E-05 1.E-08 1.E-09 1.E-10 1.E-11 1.E-06 1.E-12 0 2 4 6 8 10 0 12 1 SZ - IZ 3 4 Ct - VR 80 Terminal capacitance Ct (pF) 5 Temparature coefficient of zener voltage SZ (mV/°C) 2 Reverse voltage VR (V) Zener voltage VZ (V) 3 1 -1 -3 -5 0 2 4 6 Zener current IZ (mA) 8 10 Ta = 25 °C f = 1 MHz 70 60 50 40 30 20 10 0 0 1 2 3 4 5 Reverse voltage VR (V) Page 2 of 4 Established : 2010-07-12 Revised : 2013-09-25 Doc No. TT4-EA-12679 Revision. 4 Product Standards Zener Diode DE2S06800L Technical Data ( reference ) Rth - t PZSM - tw 1000 1000 Rth(j-l) = 80 °C/W (2) 100 10 1 0.001 (1) Non-heat sink (2) Mounted on glass epoxy print board. Board size : 45 mm × 45 mm x 1 mm Solder in : 0.8 mm x 0.6 mm 0.01 0.1 1 Time t (s) 10 100 1000 Non-repetitive reverse surge power dissipation PZSM (W) Thermal resistance Rth (°C/W) (1) Ta = 25 °C 100 10 1 0.1 100 1000 10000 Pulse width tw (μs) Page 3 of 4 Established : 2010-07-12 Revised : 2013-09-25 Doc No. TT4-EA-12679 Revision. 4 Product Standards Zener Diode DE2S06800L SSMini2-F5-B Unit: mm +0.05 +0.05 0.80-0.03 0.13-0.02 (5°) 1.60±0.05 +0.05 1.20-0.03 2 0.30±0.05 0.20±0.05 1 0 to 0.05 (0.15) +0.05 0.60-0.03 (5°)  Land Pattern (Reference) (Unit: mm) 0.6 1.7 0.6 0.8 Page 4 of 4 Established : 2010-07-12 Revised : 2013-09-25 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. 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