DMC261010R

DMC26101 Silicon NPN epitaxial planar type Unit: mm For digital circuits  Features  Low collector-emitter saturation voltage VCE(sat)  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)  Marking Symbol: E1  Basic Part Number Dual DRC2114E (Common emitter)  Packaging DMC261010R Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard)  Absolute Maximum Ratings Ta = 25°C Parameter Tr1 Tr2 Overall Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 50 V Collector-emitter voltage (Base open) VCEO 50 V Collector current IC 100 mA Total power dissipation PT 300 mW Junction temperature Tj 150 °C Operating ambient temperature Topr –40 to +85 °C Storage temperature Tstg –55 to +150 °C 4: Collector (Tr2) 5: Collector (Tr1) 1: Base (Tr1) 2: Emitter (Common) 3: Base (Tr2) Panasonic JEITA Code Mini5-G3-B SC-74A MO-178 (C1) 5 (C2) 4 Tr2 Tr1 R2 R2 R1 R1 1 (B1) 2 (E) Resistance value  Electrical Characteristics Ta = 25°C±3°C Parameter Symbol Conditions Min Typ 3 (B2) R1 10 kΩ R2 10 kΩ Max Unit Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 50 V Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 50 V Collector-base cutoff current (Emitter open) ICBO VCB = 50 V, IE = 0 0.1 µA Collector-emitter cutoff current (Base open) ICEO VCE = 50 V, IB = 0 0.5 µA Emitter-base cutoff current (Collector open) IEBO VEB = 6 V, IC = 0 0.5 mA Forward current transfer ratio hFE VCE = 10 V, IC = 5 mA 35 hFE (Small/Large) VCE = 10 V, IC = 5 mA 0.50 hFE ratio *1 VCE(sat) IC = 10 mA, IB = 0.5 mA Input voltage (ON) VI(on) VCE = 0.2 V, IC = 5 mA Input voltage (OFF) VI(off) VCE = 5 V, IC = 100 µA Collector-emitter saturation voltage  0.99  0.25 2.1 V V 0.8 V Input resistance R1 –30% 10 +30% kΩ Resistance ratio R1 / R2 0.8 1.0 1.2  Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Ratio between 2 elements Publication date: October 2013 Ver. EED 1 DMC26101 DMC26101_IC-VCE DMC26101_PT-Ta PT  Ta DMC26101_hFE-IC IC  VCE hFE  IC 350 100 IB = 350 µA 80 300 µA 250 µA 60 200 µA 40 150 µA 20 0 40 80 120 160 0 200 2 4 VCE(sat)  IC 25°C 200 −40°C 150 100 50 8 10 0 0.1 12 1 10 100 DMC26101_VIN-IO IO  VIN IC / IB = 20 10 Collector current IC (mA) DMC26101_IO-VIN DMC26101_VCEsat-IC Ta = 85°C 250 Collector-emitter voltage VCE (V) Ambient temperature Ta (°C) 10 6 300 100 µA 50 µA 0 Forward current transfer ratio hFE 100 200 0 VIN  IO 100 VO = 5 V VO = 0.2 V 1 Ta = 85°C 0.1 −40°C 1 Input voltage VIN (V) Ta = 85°C Output current IO (mA) Collector-emitter saturation voltage VCE(sat) (V) VCE = 10 V Ta = 25°C 300 Collector current IC (mA) Total power dissipation PT (mW) 120 25°C 10−1 −40°C 10−2 10 −40°C 25°C 1 Ta = 85°C 25°C 0.01 0.1 1 10 Collector current IC (mA) 100 10−3 0 0.5 1.0 1.5 Input voltage VIN (V) Ver. EED 2.0 0.1 0.1 1 10 100 Output current IO (mA) 2 DMC26101 Mini5-G3-B Unit: mm  Land Pattern (Reference) (Unit: mm) Ver. EED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. 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