DMC566040R

DMC56604 Silicon NPN epitaxial planar type Unit: mm For digital circuits DMC26604 in SMini6 type package  Features  Low collector-emitter saturation voltage VCE(sat)  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)  Marking Symbol: J7  Basic Part Number Dual DRC2114Y (Individual)  Packaging DMC566040R Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard)  Absolute Maximum Ratings Ta = 25°C Parameter Tr1 Tr2 Overall Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 50 V Collector-emitter voltage (Base open) VCEO 50 V Collector current IC 100 mA Total power dissipation PT 150 mW Junction temperature Tj 150 °C Operating ambient temperature Topr –40 to +85 °C Storage temperature Tstg –55 to +150 °C 4: Collector (Tr2) 5: Base (Tr1) 6: Collector (Tr1) SMini6-F3-B SC-113DB SOT-363 1: Emitter (Tr1) 2: Emitter (Tr2) 3: Base (Tr2) Panasonic JEITA Code (C1) 6 (B1) 5 R1 Tr1 1 (E1) 2 (E2) Conditions Min R1 3 (B2) 10 47 R1 R2  Electrical Characteristics Ta = 25°C±3°C Symbol Tr2 R2 R2 Resistance value Parameter (C2) 4 Typ Max kΩ kΩ Unit Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 50 V Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 50 V Collector-base cutoff current (Emitter open) ICBO VCB = 50 V, IE = 0 0.1 µA Collector-emitter cutoff current (Base open) ICEO VCE = 50 V, IB = 0 0.5 µA Emitter-base cutoff current (Collector open) IEBO VEB = 6 V, IC = 0 0.2 mA Forward current transfer ratio hFE VCE = 10 V, IC = 5 mA 80 hFE (Small/Large) VCE = 10 V, IC = 5 mA 0.50 hFE ratio *1 Collector-emitter saturation voltage VCE(sat) IC = 10 mA, IB = 0.5 mA Input voltage (ON) VI(on) VCE = 0.2 V, IC = 5 mA Input voltage (OFF) VI(off) VCE = 5 V, IC = 100 µA  0.99  0.25 1.7 V V 0.5 V Input resistance R1 –30% 10 +30% kΩ Resistance ratio R1 / R2 0.17 0.21 0.25  Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Ratio between 2 elements Publication date: October 2013 Ver. DED 1 DMC56604 DMC56604_PT-Ta DMC56604_hFE-IC DMC56604_IC-VCE PT  Ta IC  VCE 250 hFE  IC 120 400 150 100 50 300 µA 80 250 µA 60 200 µA 150 µA 40 100 µA 20 0 40 80 120 160 0 200 50 µA 0 Ambient temperature Ta (°C) 2 4 10 IC / IB = 20 Ta = 85°C −40°C Output current IO (mA) Collector-emitter saturation voltage VCE(sat) (V) 25°C 300 −40°C 250 200 150 100 50 0 0.1 12 1 10 100 DMC56604_IO-VIN DMC56604_VIN-IO IO  VIN 1 0.01 0.1 10 Ta = 85°C Collector current IC (mA) VCE(sat)  IC 0.1 8 VCE = 10 V Collector-emitter voltage VCE (V) DMC56604_VCEsat-IC 10 6 350 VIN  IO 100 VO = 5 V VO = 0.2 V 1 Input voltage VIN (V) 0 IB = 350 µA Forward current transfer ratio hFE 100 200 Collector current IC (mA) Total power dissipation PT (mW) Ta = 25°C Ta = 85°C 25°C 10−1 −40°C 10−2 10 Ta = −40°C 25°C 1 85°C 25°C 1 10 Collector current IC (mA) 100 10−3 0 0.5 1.0 1.5 Input voltage VIN (V) Ver. DED 2.0 0.1 0.1 1 10 100 Output current IO (mA) 2 DMC56604 SMini6-F3-B Unit: mm  Land Pattern (Reference) (Unit: mm) Ver. DED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any other company. 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