DMG20102
Silicon NPN epitaxial planar type (Tr1)
Silicon PNP epitaxial planar type (Tr2)
Unit: mm
For general amplification
Features
High forward current transfer ratio hFE with excellent linearity
Low collector-emitter saturation voltage VCE(sat)
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)
Marking Symbol: CY
Basic Part Number
DSC2002 + DSA2002 (Common emitter)
Packaging
DMG201020R Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard)
Absolute Maximum Ratings Ta = 25°C
Parameter
Tr1
Tr2
Overall
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
60
V
Collector-emitter voltage (Base open)
VCEO
50
V
Emitter-base voltage (Collector open)
VEBO
5
V
Collector current
IC
500
mA
Peak collector current
ICP
1
A
Collector-base voltage (Emitter open)
VCBO
–60
V
Collector-emitter voltage (Base open)
VCEO
–50
V
Emitter-base voltage (Collector open)
VEBO
–5
V
Collector current
IC
–500
mA
Peak collector current
ICP
–1
A
Total power dissipation
PT
300
mW
Junction temperature
Tj
150
°C
Operating ambient temperature
Topr
–40 to +85
°C
Storage temperature
Tstg
–55 to +150
°C
Publication date: January 2014
Ver. DED
1: Base (Tr1)
2: Emitter (Common)
3: Base (Tr2)
Panasonic
JEITA
Code
4: Collector (Tr2)
5: Collector (Tr1)
Mini5-G3-B
SC-74A
MO-178
(C1)
5
(C2)
4
Tr2
Tr1
1
(B1)
2
(E)
3
(B2)
1
DMG20102
Electrical Characteristics Ta = 25°C±3°C
Tr1
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC = 10 µA, IE = 0
60
V
Collector-emitter voltage (Base open)
VCEO
IC = 2 mA, IB = 0
50
V
Emitter-base voltage (Collector open)
VEBO
IE = 10 µA, IC = 0
5
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 20 V, IE = 0
hFE1
VCE = 10 V, IC = 150 mA
120
hFE2
VCE = 10 V, IC = 500 mA
40
VCE(sat)
IC = 300 mA, IB = 30 mA
0.1
fT
VCE = 10 V, IC = 50 mA
160
VCB = 10 V, IE = 0, f = 1 MHz
4.8
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Cob
0.1
340
0.6
µA
V
MHz
15
pF
Max
Unit
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Tr2
Parameter
Symbol
Conditions
Min
Typ
Collector-base voltage (Emitter open)
VCBO
IC = –10 µA, IE = 0
–60
V
Collector-emitter voltage (Base open)
VCEO
IC = –2 mA, IB = 0
–50
V
Emitter-base voltage (Collector open)
VEBO
IE = –10 µA, IC = 0
–5
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = –20 V, IE = 0
hFE1
VCE = –10 V, IC = –150 mA
120
hFE2
VCE = –10 V, IC = –500 mA
40
Collector-emitter saturation voltage
VCE(sat)
IC = –300 mA, IB = –30 mA
– 0.2
– 0.6
V
Base-emitter saturation voltage
VBE(sat)
IC = –300 mA, IB = –30 mA
– 0.9
–1.5
V
fT
VCE = –10 V, IC = –50 mA
130
VCB = –10 V, IE = 0, f = 1 MHz
7.3
Forward current transfer ratio
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Cob
– 0.1
340
µA
MHz
15
pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Common characteristics chart
DMG20102_PT-Ta
PT Ta
Total power dissipation PT (mW)
400
300
200
100
0
0
40
80
120
160
200
Ambient temperature Ta (°C)
Ver. DED
2
DMG20102
Characteristics
charts of Tr1
DMG20102(Tr1)_IC-VCE
DMG20102(Tr1)_hFE-IC
600
2.4 mA
2.1 mA
1.8 mA
1.5 mA
300
1.2 mA
200
0.9 mA
0.6 mA
100
0.3 mA
0
0
2
4
6
8
10
300
Ta = 85°C
250
25°C
200
−40°C
150
100
50
0
12
1
10
Collector-emitter voltage VCE (V)
25°C
−40°C
100
0
0.2
0.4
0.6
0.8
1.0
1.2
Collector output capacitance
(Common base, input open circuited) Cob (pF)
Collector current IC (mA)
400
200
20
4
0
1
10
−300 µA
−200 µA
−100 µA
−6
−8
−10
−12
Collector-emitter voltage VCE (V)
Forward current transfer ratio hFE
−400 µA
−4
100
50
250
Ta = 85°C
25°C
150
−40°C
−10
−102
Collector current IC (mA)
Ver. DED
102
Collector current IC (mA)
−10
−103
IC / IB = 10
−1
−10−1
50
0
−1
10
VCE(sat) IC
200
100
1
DMG20102(Tr2)_VCEsat-IC
VCE = −10 V
IB = −500 µA
−2
150
0
10−1
102
300
0
200
hFE IC
−100
0
VCE = 10 V
Ta = 25°C
DMG20102(Tr2)_hFE-IC
Ta = 25°C
103
102
250
Collector-base voltage VCB (V)
−120
−20
10
fT IC
8
IC VCE
−40
25°C
1
DMG20102(Tr1)_fT-IC
12
Characteristics
charts of Tr2
DMG20102(Tr2)_IC-VCE
−60
10−2
Collector current IC (mA)
IE = 0
f = 1 MHz
Ta = 25°C
16
Base-emitter voltage VBE (V)
−80
−40°C
Cob VCB
VCE = 10 V
300
Ta = 85°C
DMG20102(Tr1)_Cob-VCB
IC VBE
Ta = 85°C
103
10−1
Collector current IC (mA)
DMG20102(Tr1)_IC-VBE
500
102
IC / IB = 10
1
Transition frequency fT (MHz)
400
VCE = 10 V
10
Collector-emitter saturation voltage VCE(sat) (V)
Collector current IC (mA)
2.7 mA
Forward current transfer ratio hFE
IB = 3.0 mA
500
Collector current IC (mA)
VCE(sat) IC
350
Ta = 25°C
0
DMG20102(Tr1)_VCEsat-IC
hFE IC
Collector-emitter saturation voltage VCE(sat) (V)
IC VCE
−10−2
−1
Ta = 85°C
−40°C
25°C
−10
−102
−103
Collector current IC (mA)
3
DMG20102
DMG20102(Tr2)_IC-VBE
DMG20102(Tr2)_Cob-VCB
VCE = −10 V
25°C
Collector current IC (mA)
−500
Ta = 85°C
−400
−300
−40°C
−200
−100
0
0
− 0.4
− 0.8
Base-emitter voltage VBE (V)
−1.2
25
fT IC
IE = 0
f =1 MHz
Ta = 25°C
20
15
10
5
0
−1
−10
−102
Collector-base voltage VCB (V)
Ver. DED
250
Transition frequency fT (MHz)
−600
DMG20102(Tr2)_fT-IC
Cob VCB
Collector output capacitance
(Common base, input open circuited) Cob (pF)
IC VBE
VCE = −10 V
Ta = 25°C
200
150
100
50
0
−10−1
−1
−10
−102
Collector current IC (mA)
4
DMG20102
Mini5-G3-B
Unit: mm
Land Pattern (Reference) (Unit: mm)
Ver. DED
5
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any
other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any
other company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for general applications (such as office equipment, communications
equipment, measuring instruments and household appliances), or for specific applications as expressly stated in this book.
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automotive equipment, traffic signaling equipment, combustion equipment,
life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of
the products may directly jeopardize life or harm the human body.
It is to be understood that our company shall not be held responsible for any damage incurred as a result of or in connection with
your using the products described in this book for any special application, unless our company agrees to your using the products in
this book for any special application.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company.
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