DMG563020R

DMG563020R

  • 厂商:

    NAIS(松下)

  • 封装:

    SMD5

  • 描述:

    TRANS PREBIAS NPN/PNP SMINI5

  • 详情介绍
  • 数据手册
  • 价格&库存
DMG563020R 数据手册
DMG56302 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm For digital circuits DMG26302 in SMini5 type package  Features  Low collector-emitter saturation voltage VCE(sat)  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)  Marking Symbol: F6  Basic Part Number DRC2124E + DRA2124E (Collector-base connection)  Packaging DMG563020R Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard)  Absolute Maximum Ratings Ta = 25°C Parameter Tr1 Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 50 V Collector-emitter voltage (Base open) VCEO 50 V IC 100 mA Collector-base voltage (Emitter open) VCBO –50 V Collector-emitter voltage (Base open) VCEO –50 V Collector current IC –100 mA Total power dissipation PT 150 mW Junction temperature Tj 150 °C Operating ambient temperature Topr –40 to +85 °C Storage temperature Tstg –55 to +150 °C Collector current Tr2 Overall Publication date: November 2013 Ver. DED 4: Collecter (Tr2) 5: Base (Tr2) Collecter (Tr1) SMini5-F3-B SC-113CB SOT-353 1: Emitter (Tr1) 2: Base (Tr1) 3: Emitter (Tr2) Panasonic JEITA Code (B2, C1) 5 (C2) 4 R1 Tr1 R2 1 (E1) Resistance value Tr1 Tr2 R1 Tr2 R2 2 (B1) 3 (E2) R1 22 kΩ R2 22 kΩ R1 22 kΩ R2 22 kΩ 1 DMG56302  Electrical Characteristics Ta = 25°C±3°C  Tr1 Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 50 V Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 50 V Collector-base cutoff current (Emitter open) ICBO VCB = 50 V, IE = 0 0.1 µA Collector-emitter cutoff current (Base open) ICEO VCE = 50 V, IB = 0 0.5 µA Emitter-base cutoff current (Collector open) IEBO VEB = 6 V, IC = 0 0.2 mA Forward current transfer ratio hFE VCE = 10 V, IC = 5 mA VCE(sat) IC = 10 mA, IB = 0.5 mA Input voltage (ON) VI(on) VCE = 0.2 V, IC = 5 mA Input voltage (OFF) VI(off) VCE = 5 V, IC = 100 µA Collector-emitter saturation voltage 60  0.25 2.6 V V 0.8 V Input resistance R1 –30% 22 +30% kΩ Resistance ratio R1 / R2 0.8 1.0 1.2  Max Unit Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  Tr2 Parameter Symbol Conditions Min Typ Collector-base voltage (Emitter open) VCBO IC = –10 µA, IE = 0 –50 V Collector-emitter voltage (Base open) VCEO IC = –2 mA, IB = 0 –50 V Collector-base cutoff current (Emitter open) ICBO VCB = –50 V, IE = 0 – 0.1 µA Collector-emitter cutoff current (Base open) ICEO VCE = –50 V, IB = 0 – 0.5 µA Emitter-base cutoff current (Collector open) IEBO VEB = –6 V, IC = 0 – 0.2 mA Forward current transfer ratio hFE VCE = –10 V, IC = –5 mA VCE(sat) IC = –10 mA, IB = – 0.5 mA Input voltage (ON) VI(on) VCE = – 0.2 V, IC = –5 mA Input voltage (OFF) VI(off) VCE = –5 V, IC = –100 µA Collector-emitter saturation voltage 60  – 0.25 –2.6 V V – 0.8 V Input resistance R1 –30% 22 +30% kΩ Resistance ratio R1 / R2 0.8 1.0 1.2  Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Ver. DED 2 DMG56302 Common characteristics chart DMG56302_PT-Ta PT  Ta Total power dissipation PT (mW) 200 150 100 50 0 0 40 80 120 160 200 Ambient temperature Ta (°C) Characteristics charts of Tr1 DMG56302(Tr1)_IC-VCE DMG56302(Tr1)_hFE-IC 120 IB = 350 µA Collector current IC (mA) 100 300 µA 250 µA 80 200 µA 60 150 µA 40 100 µA 20 0 50 µA 0 2 4 6 8 10 Forward current transfer ratio hFE 500 Ta = 25°C 400 Ta = 85°C 300 25°C −40°C 200 100 0 0.1 12 1 100 Collector current IC (mA) DMG56302(Tr1)_IO-VIN DMG56302(Tr1)_VIN-IO IC / IB = 20 1 0.1 Ta = 85°C −40°C 25°C 0.01 0.1 1 10 100 Collector current IC (mA) VIN  IO VO = 5 V VO = 0.2 V Ta = 85°C 25°C 10−1 −40°C 10−2 0 10 100 Input voltage VIN (V) Output current IO (mA) 10 Collector-emitter voltage VCE (V) 1 10−3 VCE(sat)  IC VCE = 10 V IO  VIN 10 DMG56302(Tr1)_VCEsat-IC hFE  IC Collector-emitter saturation voltage VCE(sat) (V) IC  VCE 0.5 1.0 1.5 Input voltage VIN (V) 2.0 10 Ta = −40°C 25°C 85°C 1 0.1 0.1 1 10 100 Output current IO (mA) Ver. DED 3 DMG56302 Characteristics charts of Tr2 DMG56302(Tr2)_IC-VCE DMG56302(Tr2)_hFE-IC −120 300 −500 µA −80 −400 µA −60 −300 µA −40 −200 µA −20 −100 µA 0 0 −2 −4 −6 −8 −10 Forward current transfer ratio hFE Collector current IC (mA) IB = −600 µA 250 Ta = 85°C 200 50 −10 DMG56302(Tr2)_IO-VIN DMG56302(Tr2)_VIN-IO −1 Ta = 85°C −100 − 0.01 − 0.1 −40°C 25°C −1 −10 −100 Collector current IC (mA) −100 VO = −5 V VO = − 0.2 V Ta = 85°C 25°C −40°C −10−2 0 IC / IB = 20 VIN  IO Input voltage VIN (V) Output current IO (mA) −1 Collector current IC (mA) −10−1 −10 − 0.1 Collector-emitter voltage VCE (V) −1 −10−3 −40°C 100 IO  VIN −10 25°C 150 0 − 0.1 −12 VCE(sat)  IC VCE = −10 V Ta = 25°C −100 DMG56302(Tr2)_VCEsat-IC hFE  IC Collector-emitter saturation voltage VCE(sat) (V) IC  VCE − 0.5 −1.0 −1.5 Input voltage VIN (V) −2.0 −10 Ta = −40°C 25°C 85°C −1 − 0.1 − 0.1 −1 −10 −100 Output current IO (mA) Ver. DED 4 DMG56302 SMini5-F3-B Unit: mm  Land Pattern (Reference) (Unit: mm) Ver. DED 5 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. (3) The products described in this book are intended to be used for general applications (such as office equipment, communications equipment, measuring instruments and household appliances), or for specific applications as expressly stated in this book. Consult our sales staff in advance for information on the following applications: – Special applications (such as for airplanes, aerospace, automotive equipment, traffic signaling equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. It is to be understood that our company shall not be held responsible for any damage incurred as a result of or in connection with your using the products described in this book for any special application, unless our company agrees to your using the products in this book for any special application. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company. 20100202
DMG563020R
物料型号:DMG56302

器件简介:该器件包含硅NPN外延平面型(Tr1)和硅PNP外延平面型(Tr2),适用于数字电路,封装在SMini5型封装中。

引脚分配:Tr1的引脚为1:发射极,2:基极,3:Tr2的发射极,4:Tr2的集电极,5:Tr2的基极。Tr1和Tr2的基极和发射极电阻值均为22 kΩ。

参数特性:包括绝对最大额定值,如集电极-基极电压、集电极-发射极电压、集电极电流、总功率耗散、结温和工作环境温度等。

功能详解:文档详细列出了Tr1和Tr2的电气特性,如集电极-基极电压、集电极-发射极电压、截止电流、正向电流传输比、饱和电压、导通电压等。

应用信息:文档提供了应用电路示例,但强调技术信息仅用于展示产品的主要特性和应用电路示例,并不授予任何知识产权或许可。

封装信息:封装类型为DMG563020R,采用热压缩密封,标准包装为每卷3000个。
DMG563020R 价格&库存

很抱歉,暂时无法提供与“DMG563020R”相匹配的价格&库存,您可以联系我们找货

免费人工找货