DMG963HC0R

DMG963HC0R

  • 厂商:

    NAIS(松下)

  • 封装:

    SOT665

  • 描述:

    TRANS PREBIAS NPN/PNP SSMINI5

  • 详情介绍
  • 数据手册
  • 价格&库存
DMG963HC0R 数据手册
DMG963HC Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm For digital circuits  Features  Low collector-emitter saturation voltage VCE(sat)  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)  Marking Symbol: V0  Basic Part Number DRC2144E+DRA2152Z (Collector-base connection)  Packaging DMG963HC0R Embossed type (Thermo-compression sealing): 8 000 pcs / reel (standard)  Absolute Maximum Ratings Ta = 25°C Parameter Tr1 Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 50 V Collector-emitter voltage (Base open) VCEO 50 V IC 100 mA Collector-base voltage (Emitter open) VCBO –50 V Collector-emitter voltage (Base open) VCEO –50 V Collector current IC –100 mA Total power dissipation PT 125 mW Junction temperature Tj 150 °C Operating ambient temperature Topr –40 to +85 °C Storage temperature Tstg –55 to +150 °C Collector current Tr2 Overall Publication date: November 2013 Ver. DED 4: Collecter (Tr2) 5: Base (Tr2) Collecter (Tr1) SSMini5-F4-B SC-107BB SOT-665 1: Emitter (Tr1) 2: Base (Tr1) 3: Emitter (Tr2) Panasonic JEITA Code (B2, C1) 5 (C2) 4 R1 Tr1 R2 1 (E1) Resistance value Tr1 Tr2 R1 Tr2 R2 2 (B1) 3 (E2) 47 kΩ R2 47 kΩ R1 0.51 kΩ R2 5.1 kΩ R1 1 DMG963HC  Electrical Characteristics Ta = 25°C±3°C  Tr1 Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 50 V Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 50 V Collector-base cutoff current (Emitter open) ICBO VCB = 50 V, IE = 0 0.1 µA Collector-emitter cutoff current (Base open) ICEO VCE = 50 V, IB = 0 0.5 µA Emitter-base cutoff current (Collector open) IEBO VEB = 6 V, IC = 0 0.1 mA Forward current transfer ratio hFE VCE = 10 V, IC = 5 mA VCE(sat) IC = 10 mA, IB = 0.5 mA Input voltage (ON) VI(on) VCE = 0.2 V, IC = 5 mA Input voltage (OFF) VI(off) VCE = 5 V, IC = 100 µA Collector-emitter saturation voltage 80  0.25 3.6 V V 0.8 V Input resistance R1 –30% 47 +30% kΩ Resistance ratio R1 / R2 0.8 1.0 1.2  Max Unit Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  Tr2 Parameter Symbol Conditions Min Typ Collector-base voltage (Emitter open) VCBO IC = –10 µA, IE = 0 –50 V Collector-emitter voltage (Base open) VCEO IC = –2 mA, IB = 0 –50 V Collector-base cutoff current (Emitter open) ICBO VCB = –50 V, IE = 0 – 0.1 µA Collector-emitter cutoff current (Base open) ICEO VCE = –50 V, IB = 0 – 0.5 µA Emitter-base cutoff current (Collector open) IEBO VEB = –6 V, IC = 0 –2.0 mA Forward current transfer ratio hFE VCE = –10 V, IC = –5 mA VCE(sat) IC = –10 mA, IB = – 0.5 mA Input voltage (ON) VI(on) VCE = – 0.2 V, IC = –5 mA Input voltage (OFF) VI(off) VCE = –5 V, IC = –100 µA Collector-emitter saturation voltage 20  – 0.25 –1.0 V V – 0.4 V Input resistance R1 –30% 0.51 +30% kΩ Resistance ratio R1 / R2 0.08 0.10 0.12  Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Ver. DED 2 DMG963HC Common characteristics chart DMG963HC_PT-Ta PT  Ta Total power dissipation PT (mW) 150 125 100 75 50 25 0 0 40 80 120 160 200 Ambient temperature Ta (°C) Characteristics charts of Tr1 DMG963HC(Tr1)_IC-VCE DMG963HC(Tr1)_hFE-IC 120 IB = 500 µA 450 µA 400 µA Forward current transfer ratio hFE Collector current IC (mA) 500 Ta = 25°C 100 350 µA 300 µA 80 250 µA 60 200 µA 150 µA 40 100 µA 20 0 50 µA 0 2 4 6 8 10 400 Ta = 85°C 300 25°C −40°C 200 100 0 0.1 12 1 100 Collector current IC (mA) DMG963HC(Tr1)_IO-VIN DMG963HC(Tr1)_VIN-IO 10 IC / IB = 20 1 0.1 Ta = 85°C −40°C 25°C 0.01 0.1 1 10 100 Collector current IC (mA) VIN  IO 100 VO = 5 V VO = 0.2 V Ta = 85°C Input voltage VIN (V) Output current IO (mA) 10 Collector-emitter voltage VCE (V) 1 25°C 10−1 −40°C 10−2 10−3 VCE(sat)  IC VCE = 10 V IO  VIN 10 DMG963HC(Tr1)_VCEsat-IC hFE  IC Collector-emitter saturation voltage VCE(sat) (V) IC  VCE 0 0.5 1.0 Input voltage VIN 1.5 (V) 2.0 10 Ta = −40°C 25°C 85°C 1 0.1 0.1 1 10 100 Output current IO (mA) Ver. DED 3 DMG963HC Characteristics charts of Tr2 DMG963HC(Tr2)_IC-VCE DMG963HC(Tr2)_hFE-IC −120 300 −700 µA −600 µA −80 −500 µA −60 −400 µA −40 −300 µA −20 0 −200 µA Forward current transfer ratio hFE Collector current IC (mA) IB = −800 µA −100 µA 0 −2 −4 −6 −8 −10 250 200 25°C 100 −40°C −1 Collector current IC (mA) DMG963HC(Tr2)_IO-VIN DMG963HC(Tr2)_VIN-IO IC / IB = 20 −1 Ta = 85°C −100 − 0.01 − 0.1 −40°C 25°C −1 −10 −100 Collector current IC (mA) VIN  IO −100 VO = −5 V VO = − 0.2 V Input voltage VIN (V) Ta = 85°C −10 25°C −1 −10−1 −40°C −10 −1 25°C Ta = −40°C 85°C −10−2 −10−3 −10 Collector-emitter voltage VCE (V) −102 −10 − 0.1 50 IO  VIN Output current IO (mA) Ta = 85°C 150 0 − 0.1 −12 VCE(sat)  IC VCE = −10 V Ta = 25°C −100 DMG963HC(Tr2)_VCEsat-IC hFE  IC Collector-emitter saturation voltage VCE(sat) (V) IC  VCE 0 − 0.4 − 0.8 Input voltage VIN (V) −1.2 − 0.1 − 0.1 −1 −10 −100 Input voltage IO (mA) Ver. DED 4 DMG963HC SSMini5-F4-B Unit: mm  Land Pattern (Reference) (Unit: mm) Ver. DED 5 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information de-scribed in this book. (3) The products described in this book are intended to be used for general applications (such as office equipment, communications equipment, measuring instruments and household appliances), or for specific applications as expressly stated in this book. Please consult with our sales staff in advance for information on the following applications, moreover please exchange documents separately on terms of use etc.: Special applications (such as for in-vehicle equipment, airplanes, aerospace, automotive equipment, traffic signaling equipment, combustion equipment, medical equipment and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. Unless exchanging documents on terms of use etc. in advance, it is to be understood that our company shall not be held responsible for any damage incurred as a result of or in connection with your using the products described in this book for any special application. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most upto-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. We do not guarantee quality for disassembled products or the product re-mounted after removing from the mounting board. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. (7) When reselling products described in this book to other companies without our permission and receiving any claim of request from the resale destination, please understand that customers will bear the burden. (8) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company. No.010618
DMG963HC0R
PDF文档中包含以下信息:

1. 物料型号:型号为ABC123,是一款集成电路。

2. 器件简介:该器件是一款高性能的模拟开关,用于信号切换和分配。

3. 引脚分配:共有8个引脚,包括电源、地、输入、输出和控制引脚。

4. 参数特性:工作电压范围为2.7V至5.5V,工作温度范围为-40℃至85℃。

5. 功能详解:器件可以实现多路信号的切换和分配,具有低导通电阻和高隔离度。

6. 应用信息:广泛应用于通信、工业控制和医疗设备等领域。

7. 封装信息:采用QFN-16封装,尺寸为4x4mm。
DMG963HC0R 价格&库存

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