DMG964H10R

DMG964H1 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm For digital circuits  Features  Low collector-emitter saturation voltage VCE(sat)  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)  Marking Symbol: T2  Basic Part Number DRC2144E + DRA2143X (Individual)  Packaging DMG964H10R Embossed type (Thermo-compression sealing): 8 000 pcs / reel (standard)  Absolute Maximum Ratings Ta = 25°C Parameter Tr1 Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 50 V Collector-emitter voltage (Base open) VCEO 50 V IC 100 mA Collector-base voltage (Emitter open) VCBO –50 V Collector-emitter voltage (Base open) VCEO –50 V Collector current IC –100 mA Total power dissipation PT 125 mW Junction temperature Tj 150 °C Topr –40 to +85 °C Collector current Tr2 Overall Operating ambient temperature Storage temperature Publication date: December 2013 Tstg –55 to +150 Ver. DED °C 4: Emitter (Tr2) 5: Base (Tr2) 6: Collecter (Tr1) SSMini6-F3-B SC-107C SOT-666 1: Emitter (Tr1) 2: Base (Tr1) 3: Collector (Tr2) Panasonic JEITA Code (C1) 6 (B2) 5 R1 Tr1 R2 1 (E1) Resistance value Tr1 Tr2 (E2) 4 R2 Tr2 R1 2 (B1) 3 (C2) R1 47 kΩ R2 47 kΩ R1 4.7 kΩ R2 10 kΩ 1 DMG964H1  Electrical Characteristics Ta = 25°C±3°C  Tr1 Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 50 V Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 50 V Collector-base cutoff current (Emitter open) ICBO VCB = 50 V, IE = 0 0.1 µA Collector-emitter cutoff current (Base open) ICEO VCE = 50 V, IB = 0 0.5 µA Emitter-base cutoff current (Collector open) IEBO VEB = 6 V, IC = 0 0.1 mA Forward current transfer ratio hFE VCE = 10 V, IC = 5 mA VCE(sat) IC = 10 mA, IB = 0.5 mA Input voltage (ON) VI(on) VCE = 0.2 V, IC = 5 mA Input voltage (OFF) VI(off) VCE = 5 V, IC = 100 µA Collector-emitter saturation voltage 80  0.25 3.6 V V 0.8 V Input resistance R1 –30% 47 +30% kΩ Resistance ratio R1 / R2 0.8 1.0 1.2  Max Unit Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  Tr2 Parameter Symbol Conditions Min Typ Collector-base voltage (Emitter open) VCBO IC = –10 µA, IE = 0 –50 V Collector-emitter voltage (Base open) VCEO IC = –2 mA, IB = 0 –50 V Collector-base cutoff current (Emitter open) ICBO VCB = –50 V, IE = 0 – 0.1 µA Collector-emitter cutoff current (Base open) ICEO VCE = –50 V, IB = 0 – 0.5 µA Emitter-base cutoff current (Collector open) IEBO VEB = –6 V, IC = 0 –1.0 mA Forward current transfer ratio hFE VCE = –10 V, IC = –5 mA VCE(sat) IC = –10 mA, IB = – 0.5 mA Input voltage (ON) VI(on) VCE = – 0.2 V, IC = –5 mA Input voltage (OFF) VI(off) VCE = –5 V, IC = –100 µA Collector-emitter saturation voltage 30  – 0.25 –1.7 V V – 0.6 V Input resistance R1 –30% 4.7 +30% kΩ Resistance ratio R1 / R2 0.37 0.47 0.57  Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Ver. DED 2 DMG964H1 Common characteristics chart DMG964H1_PT-Ta PT  Ta Total power dissipation PT (mW) 150 125 100 75 50 25 0 0 40 80 120 160 200 Ambient temperature Ta (°C) Characteristics charts of Tr1 DMG964H1(Tr1)_IC-VCE DMG964H1(Tr1)_hFE-IC 120 500 Collector current IC (mA) 100 IB = 500 µA 450 µA 400 µA 350 µA Forward current transfer ratio hFE Ta = 25°C 300 µA 80 250 µA 200 µA 60 150 µA 40 100 µA 20 0 50 µA 0 2 4 6 8 10 400 Ta = 85°C 25°C 300 −40°C 200 100 0 0.1 12 1 100 10 IC / IB = 20 1 0.1 Ta = 85°C −40°C 25°C 0.01 0.1 1 10 100 Collector current IC (mA) DMG964H1(Tr1)_VIN-IO IO  VIN VIN  IO 100 VO = 5 V VO = 0.2 V Ta = 85°C 1 Input voltage VIN (V) Output current IO (mA) 10 Collector current IC (mA) DMG964H1(Tr1)_IO-VIN 25°C 10−1 −40°C 10−2 10−3 VCE(sat)  IC VCE = 10 V Collector-emitter voltage VCE (V) 10 DMG964H1(Tr1)_VCEsat-IC hFE  IC Collector-emitter saturation voltage VCE(sat) (V) IC  VCE 0 0.5 1.0 1.5 Input voltage VIN (V) 2.0 10 Ta = −40°C 25°C 85°C 1 0.1 0.1 1 10 100 Output current IO (mA) Ver. DED 3 DMG964H1 Characteristics charts of Tr2 DMG964H1(Tr2)_IC-VCE IB = −800 µA Collector current IC (mA) −100 −700 µA −600 µA −500 µA −80 −400 µA −60 −300 µA −40 −200 µA −20 −100 µA 0 0 −2 −4 −6 −8 −10 Forward current transfer ratio hFE 300 VCE = −10 V 250 50 −1 Ta = 85°C − 0.1 − 0.01 − 0.1 −40°C 25°C −1 −10 −100 Collector current IC (mA) −100 VO = − 0.2 V Ta = 85°C Input voltage VIN (V) Output current IO (mA) −100 IC / IB = 20 VIN  IO VO = −5 V 25°C −40°C − 0.5 −10 −10 DMG964H1(Tr2)_VIN-IO −10−1 −10−3 0 −1 Collector current IC (mA) IO  VIN −10−2 −40°C 100 DMG964H1(Tr2)_IO-VIN −1 25°C 150 Collector-emitter voltage VCE (V) −10 Ta = 85°C 200 0 − 0.1 −12 VCE(sat)  IC Collector-emitter saturation voltage VCE(sat) (V) hFE  IC −120 Ta = 25°C DMG964H1(Tr2)_VCEsat-IC DMG964H1(Tr2)_hFE-IC IC  VCE −1.0 Input voltage VIN (V) −1.5 −10 25°C −1 − 0.1 − 0.1 Ta = −40°C 85°C −1 −10 −100 Output current IO (mA) Ver. DED 4 DMG964H1 SSMini6-F3-B Unit: mm  Land Pattern (Reference) (Unit: mm) Ver. DED 5 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information de-scribed in this book. 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