DRA3143Y0L

Doc No. TT4-EA-11681 Revision. 2 Product Standards Transistors with Built-in Resistor DRA3143Y0L DRA3143Y0L Silicon PNP epitaxial planar type Unit: mm For digital circuits Complementary to DRC3143Y DRA9143Y in SSSMini3 type package 1.2 0.3 0.13 3  Features 0.8 1.2  High forward current transfer ratio Hfe  Low collector-emitter saturation voltage Vce(sat)  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 1 2 0.2  Marking Symbol: L7 0.52 (0.4) (0.4) 0.8  Packaging Embossed type (Thermo-compression sealing) : 10 000 pcs / reel (standard) 1. Base 2. Emitter 3. Collector  Absolute Maximum Ratings Ta = 25 C Parameter Symbol Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation Junction temperature Operating ambient temperature Storage temperature VCBO VCEO IC PT Tj Topr Tstg  Electrical Characteristics Ta = 25 C  3 C Parameter Symbol Collector-base voltage (Emitter open) VCBO Collector-emitter voltage (Base open) VCEO Collector-base cutoff current (Emitter open) ICBO Collector-emitter cutoff current (Base open) ICEO Emitter-base cutoff current (Collector open) IEBO Forward current transfer ratio hFE Collector-emitter saturation voltage VCE(sat) Vi(on) Input voltage Vi(off) Input resistance R1 Resistance ratio R1/R2 Panasonic JEITA Code Rating Unit -50 -50 -100 100 150 -40 to +85 -55 to +150 V V mA mW °C °C °C Conditions IC = -10 μA, IE = 0 IC = -2 mA, IB = 0 VCB = -50 V, IE = 0 VCE = -50 V, IB = 0 VEB = -6 V, IC = 0 VCE = -10 V, IC = -5 mA IC = -10 mA, IB = -0.5 mA VCE = -0.2 V, IC = -5 mA VCE = -5 V, IC = -100 μA SSSMini3-F2-B SC-105AA SOT-723 Internal Connection C R1 B R2 E Resistance value R1 R2 4.7 22 Min Typ Max -50 -50 60 -0.1 -0.5 -0.4 200 -0.25 -1.2 -0.5 -30% 4.7 +30% 0.17 0.21 0.27 k k Unit V V μA μA mA V V V k - Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors. Page 1 of 3 Established : 2009-10-23 Revised : 2014-02-20 Doc No. TT4-EA-11681 Revision. 2 Product Standards Transistors with Built-in Resistor DRA3143Y0L Technical Data ( reference ) IC - VCE 125 -0.12 100 -0.1 Ta = 25 ℃ Collector current IC (A) Total power dissipation PT (mW) PT - Ta 75 50 25 -600μA -500μA -400μA -0.06 -300μA -0.04 -200μA -0.02 -100μA -0 0 20 40 60 80 100 120 140 160 180 200 -0 -2 hFE - IC -6 -8 -10 -12 VCE(sat) - IC -10 300 IC/IB = 20 Collector-emitter saturation voltage VCE(sat) (V) VCE = -10 V 250 Ta = 85 ℃ 200 25 ℃ 150 100 -40 ℃ 50 0 -0.0001 -0.001 -0.01 Collector current IC (A) -1 Ta = 85 ℃ -40 ℃ -0.01 -0.0001 -0.1 25 ℃ -0.1 Io - VIN -1.0E-02 -0.001 -0.01 Collector current IC (A) -0.1 VIN - Io -100 Vo = -5 V Vo = -0.2 V Ta = 85 ℃ -40 ℃ 25 ℃ -1.0E-04 Input voltage VIN (V) -1.0E-03 -4 Collector-emitter voltage VCE (V) Ambient temperature Ta (℃) Forward current transfer ratio hFE -700μA -0.08 0 Output current Io (A) IB = -800 μA -1.0E-05 -10 Ta = -40 ℃ 25 ℃ -1 85 ℃ -1.0E-06 -0 -0.5 -1 Input voltage VIN (V) -1.5 -0.1 -0.0001 -0.001 -0.01 -0.1 Output current Io (A) Page 2 of 3 Established : 2009-10-23 Revised : 2014-02-20 Doc No. TT4-EA-11681 Revision. 2 Product Standards Transistors with Built-in Resistor DRA3143Y0L SSSMini3-F2-B Unit: mm 1.20±0.05 +0.05 0.13-0.02 +0.05 0.30-0.02 2 0.20±0.05 +0.05 0.20-0.02 (0.4) (5°) 1 1.20±0.05 0.80±0.05 3 (0.4) 0.80±0.05 0 to 0.05 0.52±0.03 (0.27) (5°)  Land Pattern (Reference) (Unit: mm) 1.15 0.35 0.45 0.35 0.35 0.35 0.4 0.4 Page 3 of 3 Established : 2009-10-23 Revised : 2014-02-20 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. 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