Doc No. TT4-EA-13057
Revision. 2
Product Standards
Transistors with Built-in Resistor
DRC9A43E0L
DRC9A43E0L
Silicon NPN epitaxial planar type
Unit: mm
For digital circuits
Complementary to DRA9A43E
DRC5A43E in SSMini3 type package
1.6
0.26
Features
0.13
3
0.85
1.6
Low collector-emitter saturation voltage Vce(sat)
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
1
2
Marking Symbol: J7
0.7
(0.5) (0.5)
1.0
Packaging
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
1. Base
2. Emitter
3. Collector
Absolute Maximum Ratings Ta = 25 C
Parameter
Symbol
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Operating ambient temperature
Storage temperature
VCBO
VCEO
IC
PT
Tj
Topr
Tstg
Electrical Characteristics Ta = 25 C 3 C
Parameter
Symbol
Collector-base voltage (Emitter open)
VCBO
Collector-emitter voltage (Base open)
VCEO
Collector-base cutoff current (Emitter open)
ICBO
Collector-emitter cutoff current (Base open)
ICEO
Emitter-base cutoff current (Collector open)
IEBO
Forward current transfer ratio
hFE
Collector-emitter saturation voltage
VCE(sat)
Vi(on)
Input voltage
Vi(off)
Input resistance
R1
Resistance ratio
R1/R2
Panasonic
JEITA
Code
Rating
Unit
50
50
80
125
150
-40 to +85
-55 to +150
V
V
mA
mW
°C
°C
°C
Conditions
IC = 10 μA, IE = 0
IC = 2 mA, IB = 0
VCB = 50 V, IE = 0
VCE = 50 V, IB = 0
VEB = 6 V, IC = 0
VCE = 10 V, IC = 5 mA
IC = 10 mA, IB = 0.5 mA
VCE = 0.2 V, IC = 5 mA
VCE = 5 V, IC = 100 μA
SSMini3-F3-B
SC-89
SOT-490
Internal Connection
B
C
R1
R2
E
Resistance
value
R1
R2
4.7
4.7
Min
Typ
Max
50
50
0.1
0.5
2.0
20
0.25
1.9
-30%
0.8
4.7
1.0
0.8
+30%
1.2
k
k
Unit
V
V
μA
μA
mA
V
V
V
k
-
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
Page 1 of 3
Established : 2011-01-26
Revised
: 2014-03-18
Doc No. TT4-EA-13057
Revision. 2
Product Standards
Transistors with Built-in Resistor
DRC9A43E0L
Technical Data ( reference )
IC - VCE
0.08
125
0.07
Collector current IC (A)
Total power dissipation PT (mW)
PT - Ta
150
100
75
50
25
20
40
60
80
IB = 450 μA
0.06
400 μA
0.05
350 μA
0.04
300 μA
0.03
250 μA
0.02
0.01
0
0
Ta = 25 ℃
200 μA
0
100 120 140 160 180 200
0
2
Ambient temperature Ta (℃)
hFE - IC
6
8
10
12
VCE(sat) - IC
10
200
IC/IB = 20
VCE = 10 V
Collector-emitter saturation voltage
VCE(sat) (V)
Forward current transfer ratio hFE
4
Collector-emitter voltage VCE (V)
150
Ta = 85 ℃
100
25 ℃
50
-40 ℃
0
0.0001
0.001
0.01
1
Ta = 85 ℃
0.1
-40 ℃
0.01
0.0001
0.1
Collector current IC (A)
0.001
0.01
Collector current IC (A)
Io - VIN
1.E-02
0.1
VIN - Io
100
Vo = 5 V
25 ℃
Vo = 0.2 V
Output current Io (A)
Input voltage VIN (V)
Ta = 85 ℃
1.E-03
25 ℃
1.E-04
-40 ℃
1.E-05
10
25 ℃
Ta = -40 ℃
1
85 ℃
1.E-06
0
0.5
1
1.5
Input voltage VIN (V)
2
2.5
0.1
0.0001
0.001
0.01
0.1
Output current Io (A)
Page 2 of 3
Established : 2011-01-26
Revised
: 2014-03-18
Doc No. TT4-EA-13057
Revision. 2
Product Standards
Transistors with Built-in Resistor
DRC9A43E0L
SSMini3-F3-B
Unit: mm
+0.05
1.60-0.03
+0.05
0.13-0.02
+0.05
0.26-0.02
(5°)
2
(0.5) (0.5)
1.00±0.05
0.375±0.050
1
1.60±0.05
+0.05
0.85-0.03
3
0 to 0.1
(0.45)
+0.05
0.70-0.03
(5°)
Land Pattern (Reference) (Unit: mm)
1.4
0.6
0.6
1.0
Page 3 of 3
Established : 2011-01-26
Revised
: 2014-03-18
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Please consult with our sales staff in advance for information on the following applications, moreover please exchange
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(4) The products and product specifications described in this book are subject to change without notice for modification
and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most upto-date Product Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating
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Even when the products are used within the guaranteed values, take into the consideration of incidence of break down
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No.010618
