DSA9G01
Silicon NPN epitaxial planar type
For high-frequency amplification
DSA5G01 in SSMini3 type package
Unit: mm
Features
High transition frequency fT
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)
Marking Symbol: A4
Packaging
DSA9G01×0L Embossed type (Thermo-compression sealing): 3 000 pcs / reel
(standard)
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
–30
V
–20
V
–5
V
–30
mA
1: Base
Collector power dissipation
PC
125
mW
Junction temperature
Tj
150
°C
–40 to
+85
°C
–55 to
+150
°C
Operating ambient temperature
Topr
Storage temperature
Parameter
Tstg
Symbol
Base-emitter voltage
VBE
Collector-base cutoff current (Emitter
open)
ICBO
Collector-emitter cutoff current (Base
open)
ICEO
Emitter-base cutoff current (Collector
open)
IEBO
2: Emitter
3: Collector
SSMini3-F3-B
JEITA
SC-89
Code
SOT-490
Absolute Maximum
Ratings Ta = 25°C
Electrical
Characteristics Ta = 25°C±3°C
Conditions
Min
VCE = –10 V, IC = –1 mA
Typ
Max
– 0.7
Unit
V
VCB = –10 V, IE = 0
– 0.1
µA
VCE = –20 V, IB = 0
–100
µA
VEB = –5 V, IC = 0
–10
µA
VCE = –10 V, IC = –1 mA
Forward current transfer ratio *1
Panasonic
70
220
hFE
IC = –10 mA, IB = –1 mA
Collector-emitter saturation voltage
– 0.1
V
300
MHz
1.0
pF
VCE(sat)
Transition frequency
fT
VCE = –10 V, IC = –1 mA
Reverse transfer capacitance
(Common emitter)
Cre
VCE = –10 V, IC = –1 mA, f = 10.7
MHz
Ver. CED
150
1
Noise figure
NF
VCE = –10 V, IC = –1 mA, f = 5 MHz
2.8
dB
Reverse transfer impedance
Zrb
VCE = –10 V, IC = –1 mA, f = 2 MHz
22
W
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for
transistors.
2. *1: Rank classification
Code
B
C
0
Rank
B
C
No-rank
hFE
70 to 140
110 to 220
70 to 220
Marking Symbol
A4B
A4C
A4
Product of no-rank is not classified and have no marking symbol for rank.
Publication date: February 2014
DSA9G01
Ver. CED
2
fT
350
IC
VCE = −10 V
Ta = 25°C
300
250
200
150
100
50
0
−10−1
−1
−10
−102
Collector current IC (mA)
DSA9G01
Ver. CED
3
Land Pattern (Reference) (Unit: mm)
Ver. CED
4
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
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Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
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