DSC7505
Silicon NPN epitaxial planar type
Unit: mm
Features
Low collector-emitter saturation voltage VCE(sat)
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)
Marking Symbol: 5G
Packaging
DSC7505 0L Embossed type (Thermo-compression sealing): 1 000 pcs / reel (standard)
Absolute Maximum Ratings Ta = 25 C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
40
V
Collector-emitter voltage (Base open)
VCEO
20
V
Emitter-base voltage (Collector open)
VEBO
7
V
Collector current
IC
3
A
Peak collector current
ICP
5
A
Collector power dissipation *1
PC
1
W
Junction temperature
Tj
150
C
Operating ambient temperature
Topr
–40 to +85
C
Storage temperature
Tstg
–55 to +150
C
1: Base
2: Collector
3: Emitter
Panasonic
JEITA
Code
MiniP3-F2-B
SC-62
TO-243
cm2
Note) *1: Printed circuit board: Copper foil area of 1
or more, and the board thickness
of 1.7 mm for the collector portion
Absolute maximum rating without heat sink for PC is 0.5 W
Electrical Characteristics Ta = 25 C 3 C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
VCEO
IC = 1 mA, IB = 0
20
V
Emitter-base voltage (Collector open)
VEBO
IE = 10 A, IC = 0
7
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 10 V, IE = 0
hFE1
Forward current transfer ratio *1
Collector-emitter saturation voltage *1
*2
VCE = 2 V, IC = 0.5 A
230
hFE2
VCE = 2 V, IC = 2 A
150
VCE(sat)
IC = 3 A, IB = 0.1 A
frequency *1
fT
VCE = 6 V, IC = 50 mA
Collector output capacitance
(Common base, input open circuited)
Cob
VCB = 20 V, IE = 0, f = 1 MHz
Transition
0.1
A
600
1.0
200
V
MHz
50
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*
Code
Q
R
0
Rank
Q
R
No-rank
hFE1
230 to 380
340 to 600
230 to 600
Marking Symbol
5GQ
5GR
5G
Publication date: February 2014
Ver. DED
1
DSC7505
PC
Ta
VCE(sat)
fT
IC
IC
VCE
IC
VBE
hFE
Cob
IC
VCB
IC
Ver. DED
2
DSC7505
MiniP3-F2-B
Unit: mm
Land Pattern (Reference) (Unit: mm)
Ver. DED
3
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