DY2L5A0C0L1

Doc No. TT4-EA-15062 Revision. 1 Product Standards TVS Diode DY2L5A0C0L1 DY2L5A0C0L1 Silicon epitaxial planar type Unit: mm For bidirectional ESD protection and transient voltage suppressor 0.3 2 IEC 61000-4-2 (ESD) ±15kV (air and contact) Low clamping voltage Low capacitance Low leak current Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 1 0.0425 0.215 0.115 0.4      0.6  Features  Marking Symbol: F4 2 0.115 1 0.1  Packaging 0.215 Embossed type (Thermo-compression sealing) : 1 000 pcs / reel (standard)  Absolute Maximum Ratings Ta = 25 C Parameter Symbol Total power dissipation *1 Electrostatic discharge *2 Peak pulse power *3 Peak pulse current *3 Junction temperature Operating ambient temperature Storage temperature PT ESD Ppp Ipp Tj Topr Tstg Rating Unit 100 ±15 20 1.8 150 -40 to +85 -55 to +150 mW kV W A °C °C °C 1. Anode 2. Anode Panasonic JEITA Code DCSP0603010-N2 ― ― Internal Connection 2 Note: *1 Mounted on FR4 board. (25.4 mm x 25.4 mm x 1.0 mm) *2 Test method:IEC61000-4-2 (C = 150 pF, R = 330 W, Contact and Air discharge:10 times) *3 Test method:IEC61000-4-5 (tp = 8/20ms, Unrepeated)  Electrical Characteristics Ta = 25 C  3 C Parameter Symbol Reverse stand-off voltage Reverse breakdown voltage Reverse current Clamping voltage *3 Terminal capacitance *1, *2 VRWM VBR IR Vc Ct 1 Conditions Min ― IR = 5 mA VR = 5 V Ipp = 1.8 A, tp = 8/20 ms VR = 0 V, f = 1 MHz 7.0 Typ 7.5 Max Unit 5.0 8.0 50 13 V V nA V pF 6.0 Percent of Ipp Note: 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 8ms/20ms Pulse Waveform measuring methods for diodes. Front time: 2. Absolute frequency of input and output is 5 MHz. 100 T1 = 1.25 × T = 8ms±20% 90 Time to half value: 3. *1 The temperature must be controlled 25°C for VBR mesurement. T2 = 20ms±20% T2 VBR value measured at other temperature must be adjusted to VBR (25°C). 50 *2 VBR guaranted 20 ms after current flow. *3 8ms/20ms Pulse Waveform 10 T T1 t Page 1 of 3 Established : 2015-10-13 Revised : ####-##-## Doc No. TT4-EA-15062 Revision. 1 Product Standards TVS Diode DY2L5A0C0L1 Technical Data (Reference) PT - Ta IR - VBR 1.0E-01 Ta = 25 ℃ Mounted on FR4 board. Board size : 25.4 mm x 25.4 mm x 1.0 mm Reverse current IR (A) Total power dissipation PT (mW) 150 100 1.0E-02 50 1.0E-03 0 0 20 40 60 80 100 120 140 160 180 200 Ambient temperature Ta (℃) 4 5 6 7 8 9 10 11 12 Reverse breakdown voltage VBR (V) Ct - VR IR - VR 1.0E-08 1.0E-04 12 Ta = 25 ℃ Ta = 25 ℃ f = 1 MHz Terminal capacitance Ct (pF) 10 Reverse current IR (A) 1.0E-09 1.0E-10 1.0E-11 1.0E-12 8 6 4 2 0 1 2 3 4 Reverse voltage VR (V) 5 0 1 2 3 4 5 Reverse voltage VR (V) Page 2 of 3 Established : 2015-10-13 Revised : ####-##-## Doc No. TT4-EA-15062 Revision. 1 Product Standards TVS Diode DY2L5A0C0L1 DCSP0603010-N2 Unit: mm 0.30±0.03 1 0.215±0.030 0.115±0.030 0.4 0.10±0.02 0.0425±0.0300 2 0.115±0.030 0.60±0.03 2 1  Land Pattern (Reference) 0.215±0.030 Unit: mm 0.215 0.4 0.215 0.3 Page 3 of 3 Established : 2015-10-13 Revised : ####-##-## Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. 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