Doc No. TT4-EA-15080
Revision. 1
Product Standards
MOS FET
FC4B21300L1
FC4B21300L1
Gate resistor installed Dual N-channel MOS FET
Unit: mm
For lithium-ion secondary battery protection circuits
0.6
3
1
2
Features
Source-source ON resistance:Rss(on) typ. = 80 mW(VGS = 3.8 V)
CSP(Chip Size Package)
RoHS compliant (EU RoHS / MSL:Level 1 compliant)
0.1
0.6
4
φ0.15
0.3
Marking Symbol: 29
Packaging
Embossed type (Thermo-compression sealing) : 1 000 pcs / reel (standard)
(0.15)
0.3
(0.15)
1. Source1 (FET1) 3. Gate2 (FET2)
2. Gate1 (FET1) 4. Source2 (FET2)
Absolute Maximum Ratings Ta = 25 C
Parameter
Symbol
Source-source Voltage
Gate-source Voltage
Source Current (DC)
Source Current (Pulsed)
Total Power Dissipation
Channel Temperature
Storage Temperature Range
Thermal Resistance (ch-a)
Note
VSS
VGS
IS *1
IS *2
ISp *3
PD *1
PD *2
Tch
Tstg
Rth *1
Rth *2
Rating
Unit
12
8
1.5
2
15
0.32
0.6
150
-55 to +150
390
208
V
V
A
A
A
W
W
C
C
C/W
C/W
*1 Mounted on FR4 board ( 25.4 mm 25.4 mm t1.0 mm )
using the minimum recommended pad size (36mm Copper ).
*2 Mounted on Ceramic substrate (70 mm 70 mm t1.0 mm).
*3 t = 10 ms, Duty Cycle 1 %
Panasonic
JEITA
Code
ALGA004-W-0606-RA
―
―
Equivalent circuit
FET2
FET1
Page 1 of 5
Established : 2015-10-23
Revised
: ####-##-##
Doc No. TT4-EA-15080
Revision. 1
Product Standards
MOS FET
FC4B21300L1
Electrical Characteristics Ta = 25 C 3 C
Parameter
Symbol
Source-source Breakdown Voltage
Zero Gate Voltage Source Current
VSSS
ISSS
Gate-source Leakage Current
IGSS
Gate-source Threshold Voltage
Vth
RSS(on)1
RSS(on)2
RSS(on)3
RSS(on)4
VF(s-s)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Source-source On-state Resistance
Body Diode Forward Voltage
Input Capacitance *1
Output Capacitance *1
Reverse Transfer Capacitance
Turn-on delay Time *1,*2
Rise Time *1,*2
Turn-off delay Time *1,*2
Fall Time *1,*2
Total Gate Charge *1
Gate-source Charge *1
Gate-drain Charge *1
Note
*1
Conditions
Min
IS = 1 mA, VGS = 0 V
VSS = 12 V, VGS = 0 V
VGS = 8 V, VSS = 0 V
VGS = 5 V, VSS = 0 V
IS = 0.03 mA, VSS = 10 V
IS = 0.75 A, VGS = 4.5 V
IS = 0.75 A, VGS = 3.8 V
IS = 0.75 A, VGS = 3.1 V
IS = 0.75 A, VGS = 2.5 V
IF = 0.75 A, VGS = 0 V
Typ
Max
Unit
12
0.35
55
60
65
70
VSS = 10 V, VGS = 0 V, f = 1 MHz
VDD = 10 V, VGS = 0 to 4.0 V
IS = 0.75 A
VDD = 10 V, VGS = 4.0 to 0 V
IS = 0.75 A
VDD = 10 V
VGS = 0 to 4.0 V,
IS = 0.75 A
0.90
70
80
90
115
0.6
115
25
18
0.10
0.20
0.27
0.22
1.7
0.5
0.45
V
mA
1.0
10
1.0
1.4
95
110
150
225
1.2
mA
V
mW
V
pF
ms
ms
nC
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
*1 Guaranteed by design, not subject to production testing
*2 Measurement circuit for Turn-on Delay Time / Rise Time / Turn-off Delay Time / Fall Time
Note2 : Measurement circuit
VDD = 10 V
IS = 0.75 A
RL = 13.3 W
Vout
S2
90 %
Vin
10 %
Rg
G2
90 %
Rg
G1
Vin
4V
90 %
Vout
10 %
10 %
50 W
0V
PW = 10 ms
D.C. 1 %
S1
td(on) tr
td(off)
tf
Page 2 of 5
Established : 2015-10-23
Revised
: ####-##-##
Doc No. TT4-EA-15080
Revision. 1
Product Standards
MOS FET
FC4B21300L1
Technical Data ( reference )
IS - VSS
RSS(on) - IS
Source-source ON-state Resistance
RSS (on) ( mW )
5
Source Current IS ( A )
VGS = 4.5 V
4
3.8 V
3
3.1 V
2.5 V
2
1
※Pulse measurement
0
0
0.2
0.4
0.6
0.8
400
※Pulse measurement
350
300
250
200
2.5 V
150
3.1 V
100
50
0.5
1
1
IS - VGS
Source-source ON-state Resistance
RSS (on) ( mW )
※Pulse measurement
1.E-03
Ta = 85 C
1.E-04
25 C
-40 C
1.E-05
1.E-06
0.2
0.7
1.2
1.7
250
200
150
Ta = 85 C
100
IS = 0.75A
50
1
Gate-source Leakage Current IGS ( A )
※Pulse measurement
Ta = 85 C
25 C
-40 °C
0.01
1
1.5
Body Diode Forward Voltage VF ( V )
-40 C
2
3
4
5
Gate-source Voltage VGS ( V )
IF - VF
0.5
25 C
0
2.2
10
0.1
2.5
※Pulse measurement
Gate-source Voltage VGS ( V )
1
2
RSS(on) - VGS
300
1.E-02
Source Current IS ( A )
1.5
Source Current IS (A)
Source-source Voltage VSS (V)
Diode Forward Current IF ( A )
VGS = 4.5 V
3.8 V
0
2
IGS - VGS
1.E-03
1.E-04
※Pulse measurement
Ta = 85 C
1.E-05
1.E-06
25 C
1.E-07
1.E-08
-40 C
1.E-09
1.E-10
0
2
4
6
8
10
Gate-source Voltage VGS (V)
Page 3 of 5
Established : 2015-10-23
Revised
: ####-##-##
Doc No. TT4-EA-15080
Revision. 1
Product Standards
MOS FET
Technical Data ( reference )
ISS - VSS
Dynamic Input/Output Characteristics
1.E-03
Gate - source Voltage VGS ( V )
Zero Gate Voltage Source Current ISS ( A )
FC4B21300L1
1.E-04
1.E-05
Ta = 85 C
1.E-06
1.E-07
25 C
1.E-08
-40 C
1.E-09
1.E-10
0
5
10
15
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
20
10 V
0
Source-source Voltage VSS ( V )
Rth - tsw
1
2
3
Safe Operating Area
100
limited by
RSS(on) (VGS = 3.8 V)
Source Current IS ( A )
Thermal Resistance Rth ( C/W )
VDD = 12 V
Gate Charge ( nC )
1000
100
10
Ta = 25 C,
Mounted on FR4 board ( 25.4 mm ͯ 25.4 mm ͯ t1.0 mm )
using the minimum recommended pad size (36mm Copper ).
1
0.001
0.01
0.1
1
10
100
1000
Pulse Width tsw ( s )
Normalized Effective Transient Thermal Impedance
8V
IS = 0.75 A
PW = 10 ms
10
500 ms
1 ms
1
0.1
0.01
10 ms
100 ms
1s
DC
Ta = 25 C,
Mounted on FR4 board
( 25.4 mm ͯ 25.4 mm ͯ t1.0 mm )
using the minimum recommended
pad size (36mm Copper ).
0.1
1
10
100
Source-source Voltage VSS ( V )
Thermal Response
10
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
Ta = 25 C,
Mounted on FR4 board ( 25.4 mm ͯ 25.4 mm ͯ t1.0 mm )
using the minimum recommended pad size (36mm Copper ).
0.001
0.0001
0.001
0.01
0.1
1
10
100
Square Wave Pulse Duration ( s )
Page 4 of 5
Established : 2015-10-23
Revised
: ####-##-##
Doc No. TT4-EA-15080
Revision. 1
Product Standards
MOS FET
FC4B21300L1
Outline (ALGA004-W-0606-RA)
Unit: mm
0.60±0.03
3
1
2
0.10±0.02
0.60±0.03
4
(0.15)
0.3
Land Pattern (Reference)
(0.15)
0.3
φ0.15±0.03
Unit: mm
0.335
φ0.2
0.335
Page 5 of 5
Established : 2015-10-23
Revised
: ####-##-##
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any
other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any
other company which may arise as a result of the use of technical information described in this book.
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equipment, measuring instruments and household appliances), or for specific applications as expressly stated in this book.
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automotive equipment, traffic signaling equipment, combustion equipment,
life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of
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Standards in advance to make sure that the latest specifications satisfy your requirements.
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defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
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