FC4B22270L1

Doc No. TT4-ZZ-02012 Revision. 1 Product Standards MOS FET FC4B22270L1 FC4B22270L1 Gate resistor installed Dual N-channel MOS FET For lithium-ion secondary battery protection circuits Unit: mm 1.29 3 1 2 1.29 4  Low source-source ON resistance:Rss(on) typ. = 18 m（VGS = 3.8 V)  CSP(Chip Size Package)  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL : Level 1) 0.10 0.11  Features 0.5 φ0.25  Marking Symbol: 2J  Packaging Embossed type (Thermo-compression sealing) : 1 000 pcs / reel (standard) (0.395) 0.5 1. Source1 (FET1) 2. Gate1 (FET1)  Absolute Maximum Ratings Ta = 25 C Parameter Symbol Source-source Voltage Gate-source Voltage Source Current (DC) Source Current (Pulsed) Total Power Dissipation Channel Temperature Storage Temperature Range Thermal Resistance (ch-a) Note VSS VGS IS *1 IS *2 ISp *2 PD *1 PD *2 Tch Tstg Rth *1 Rth *2 Rating Unit 20 12 4 8 40 0.37 1.5 150 -55 to +150 338 83 V V *1 Mounted on FR4 board ( 25.4 mm  25.4 mm  t1.0 mm ) using the minimum recommended pad size (36m Copper ). *2 Mounted on Ceramic substrate (70 mm  70 mm  t1.0 mm). *3 t = 10 s, Duty Cycle  1 % A Panasonic JEITA Code (0.395) 3. Gate2 (FET2) 4. Source2 (FET2) ULGA004-W-1313-RA ― ― Equivalent circuit A W C C 4(S2) 3(G2) 1(S1) 2(G1) FET2 C/W FET1 Page 1 of 5 Established : 2016-11-09 Revised : ####-##-## Doc No. TT4-ZZ-02012 Revision. 1 Product Standards MOS FET FC4B22270L1  Electrical Characteristics Ta = 25 C  3 C Parameter Symbol Source-source Breakdown Voltage Zero Gate Voltage Source Current Gate-source Leakage Current Gate-source Threshold Voltage Source-source On-state Resistance Body Diode Forward Voltage Input Capacitance *1 Output Capacitance *1 Reverse Transfer Capacitance *1 Turn-on delay Time *1,*2 Rise Time *1,*2 Turn-off delay Time *1,*2 Fall Time *1,*2 Total Gate Charge *1 Gate-source Charge *1 Gate-drain Charge *1 Note VSSS ISSS IGSS Vth RSS(on)1 RSS(on)2 RSS(on)3 RSS(on)4 VF(s-s) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Conditions Min IS = 1 mA, VGS = 0 V VSS = 20 V, VGS = 0 V VGS = 8 V, VSS = 0 V IS = 0.31 mA, VSS = 10 V IS = 2.0 A, VGS = 4.5 V IS = 2.0 A, VGS = 3.8 V IS = 2.0 A, VGS = 3.1 V IS = 2.0 A, VGS = 2.5 V IF = 2.0 A, VGS = 0 V Typ Max Unit 20 0.35 0.90 12 17 12.5 18 19 13.5 22 14 0.8 910 105 VSS = 10 V, VGS = 0 V, f = 1 KHz 80 0.25 VDD = 10 V, VGS = 0 to 4.0 V 0.55 IS = 2.0 A 1.65 VDD = 10 V, VGS = 4.0 to 0 V 1.0 IS = 2.0 A 9 VDD = 10 V 2.6 VGS = 0 to 4.0 V, IS = 2.0 A 2.4 V A A V 1.0 10 1.4 22 23 26.5 37 1.2 m V pF s s nC Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors. *1 Guaranteed by design, not subject to production testing *2 Measurement circuit for Turn-on Delay Time / Rise Time / Turn-off Delay Time / Fall Time Note2:Measurement circuit VDD = 10 V IS = 2.0 A RL = 5.0  Vout S2 90 % Vin 10 % Rg G2 90 % G1 Vin 4V 90 % Vout Rg 10 % 10 %   0V PW = 10 s D.C. 1 % S1 td(on) tr td(off) tf Page 2 of 5 Established : 2016-11-09 Revised : ####-##-## Doc No. TT4-ZZ-02012 Revision. 1 Product Standards MOS FET FC4B22270L1 Technical Data ( reference ) RSS(on) - IS Source-source ON-state Resistance RSS (on) ( m) IS - VSS Source Current IS ( A ) 5 4 3.8 V VGS = 4.5 V 3.1 V 3 2.5 V 2 1 ※Pulse measurement 0 0 0.05 0.1 0.15 30 25 2.5 V 3.1 V 20 3.8 V VGS = 4.5 V 15 0.2 ※Pulse measurement 1 2 Source Current IS ( A ) 1.E+00 ※Pulse measurement Ta = 85 C 1.E‐01 0.4 0.6 0.8 -40 C 1 1.2 1.4 40 ※Pulse measurement 30 10 IS = 2.0 A 0 2 25 C -40 C 0.4 0.6 0.8 1 Body Diode Forward Voltage VF ( V ) 1.2 Gate-source Leakage Current IGS ( A ) Diode Forward Current IF ( A ) Ta = 85 C 0.2 6 8 10 IGS - VGS ※Pulse measurement 0.01 4 Gate-source Voltage VGS ( V ) IF - VF 0.1 -40 C 25 C 0 1.6 Ta = 85 C 20 Gate-source Voltage VGS ( V ) 1 5 RSS(on) - VGS Source-source ON-state Resistance RSS (on) ( m) IS - VGS 1.E‐02 4 Source Current IS ( A ) Source-source Voltage VSS ( V ) 25 C 3 1.E‐04 ※Pulse measurement 1.E‐05 Ta = 85 C 1.E‐06 25 C 1.E‐07 1.E‐08 -40 C 1.E‐09 1.E‐10 0 2 4 6 8 10 12 Gate-source Voltage VGS ( V ) Page 3 of 5 Established : 2016-11-09 Revised : ####-##-## Doc No. TT4-ZZ-02012 Revision. 1 Product Standards MOS FET FC4B22270L1 Technical Data ( reference ) Zero Gate Voltage Drain Current ISS ( A ) ISS - VSS Dynamic Input/Output Characteristics 6 Gate - source Voltage VGS ( V ) 1.E‐03 1.E‐04 1.E‐05 1.E‐06 Ta = 85 C 1.E‐07 25 C 1.E‐08 -40 C 1.E‐09 1.E‐10 4 3 2 1 0 0 5 10 15 20 25 VDD = 10 V IS = 2.0 A 5 30 0 5 10 15 Gate Charge ( nC ) Source‐source Voltage VSS ( V ) Rth - tsw Safe Operating Area 1000 limited by RSS(on) （VGS = 3.8 V） Source Current IS ( A ) Thermal Resistance Rth ( C/W ) 100 100 10 Ta = 25 C, Mounted on FR4 board ( 25.4 mm ͯ 25.4 mm ͯ t1.0 mm ) using the minimum recommended pad size (36m Copper ). 1 0.001 0.01 0.1 1 10 100 1000 Normalized Effective Transient Thermal Impedance Pulse Width tsw ( s ) Absolute Maximum 500 s 10 1 ms 10 ms 1 100 ms 1s 0.1 0.01 Ta = 25 C, Mounted on FR4 board ( 25.4 mm ͯ 25.4 mm ͯ t1.0 mm ) using the minimum recommended pad size (36m Copper ). 0.1 1 DC 10 100 Source-source Voltage VSS ( V ) Thermal Response 10 1 Ta = 25 C, Mounted on FR4 board ( 25.4 mm ͯ 25.4 mm ͯ t1.0 mm ) using the minimum recommended pad size (36m Copper ). Duty Cycle = 0.5 0.1 0.1 0.05 0.02 Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 10 100 Square Wave Pulse Duration ( s ) Page 4 of 5 Established : 2016-11-09 Revised : ####-##-## Doc No. TT4-ZZ-02012 Revision. 1 Product Standards MOS FET FC4B22270L1 Unit: mm  Outline (ULGA004-W-1313-RA) 1.29±0.04 3 1 2 +0.05 0.10 ±0.02 -0.02 0.11 1.29±0.04 4 (0.395) 0.5 (0.395) 0.5 φ0.25±0.03 Unit: mm  Land Pattern (Reference) 0.5 φ0.25 0.5 Page 5 of 5 Established : 2016-11-09 Revised : ####-##-## Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. 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